Abstract: A carbon nanotube composite material (1) includes a metal base material (10) and carbon nanotube electrically-conductive path portions (20). The metal base material (10) is made from a polycrystalline substance in which a plurality of rod-shaped metal crystal grains (11) are oriented in a direction. The carbon nanotube electrically-conductive path portions (20) are made from doped carbon nanotubes having a dopant, existing in parts of grain boundaries (15) between the rod-shaped metal crystal grains (11) in a cross section of the metal base material (10), and forming an electrically-conductive path which is electrically conductive in a longitudinal direction of the metal base material (10), by existing along the longitudinal direction (L).

Abstract: Provided is a method for manufacturing a sheet-shaped separation membrane that allows a sheet-shaped separation membrane having uniform separating ability to be manufactured at a high speed, the method comprising manufacturing a sheet-shaped separation membrane by forming a microporous layer on a porous substrate, wherein the method is characterized in having: a membrane-forming solution application step of coating a porous substrate with a membrane-forming solution in which a polymer is dissolved in a solvent, a congealing liquid application step of applying a congealing liquid by a liquid membrane drop method to the porous substrate coated with the membrane-forming solution, and a solvent removal step of removing the solvent from the congealed microporous layer.

Abstract: A carbon nanotube composite material (1) includes a metal base material (10) and carbon nanotube electrically-conductive path portions (20). The metal base material (10) is made from a polycrystalline substance in which a plurality of rod-shaped metal crystal grains (11) are oriented in a direction. The carbon nanotube electrically-conductive path portions (20) are made from doped carbon nanotubes having a dopant, existing in parts of grain boundaries (15) between the rod-shaped metal crystal grains (11) in a cross section of the metal base material (10), and forming an electrically-conductive path which is electrically conductive in a longitudinal direction of the metal base material (10), by existing along the longitudinal direction (L).

Abstract: Methods for producing a semiconductor layer and for producing a photoelectric conversion device, semiconductor raw material are disclosed. An embodiment of the method for producing a semiconductor layer includes: forming a film containing a metal element and an oxygen element; generating oxygen gas by heating the film; and forming a semiconductor layer containing a metal chalcogenide from the film by allowing the metal element to react with a chalcogen element. Another embodiment of the method includes forming a lower film containing a metal element; forming an upper film, which contains the metal element and a substance that contains oxygen, on the lower film; generating oxygen gas by heating the substance; and forming a semiconductor layer containing a metal chalcogenide from the lower film and the upper film by allowing a chalcogen element to react with the metal element in the lower film and the upper film.

Abstract: Methods for producing a semiconductor layer and for producing a photoelectric conversion device, semiconductor raw material are disclosed. An embodiment of the method for producing a semiconductor layer includes: forming a film containing a metal element and an oxygen element; generating oxygen gas by heating the film; and forming a semiconductor layer containing a metal chalcogenide from the film by allowing the metal element to react with a chalcogen element. Another embodiment of the method includes forming a lower film containing a metal element; forming an upper film, which contains the metal element and a substance that contains oxygen, on the lower film; generating oxygen gas by heating the substance; and forming a semiconductor layer containing a metal chalcogenide from the lower film and the upper film by allowing a chalcogen element to react with the metal element in the lower film and the upper film.

Abstract: To provide a photoelectric conversion device having a high photoelectric conversion efficiency, a photoelectric conversion device 21 includes a substrate 1, a plurality of lower electrodes 2 on the substrate 1 comprising a metal element, a plurality of photoelectric conversion layers 33 comprising a chalcogen compound semiconductor formed on the plurality of lower electrodes 2 and separated from one another on the lower electrodes 2, a metal-chalcogen compound layer 8 comprising the metal element and a chalcogen element included in the chalcogen compound semiconductor formed between the lower electrode 2 and the photoelectric conversion layer 33, an upper electrode 5 formed on the photoelectric conversion layer 33, and a connection conductor 7 electrically connecting, in a plurality of the photoelectric conversion layers 33, the upper electrode 5 to the lower electrode 2 without interposition of the metal-chalcogen compound layer 8.

Abstract: Provided is a method for manufacturing a sheet-shaped separation membrane that allows a sheet-shaped separation membrane having uniform separating ability to be manufactured at a high speed, the method comprising manufacturing a sheet-shaped separation membrane by forming a microporous layer on a porous substrate, wherein the method is characterized in having: a membrane-forming solution application step of coating a porous substrate with a membrane-forming solution in which a polymer is dissolved in a solvent, a congealing liquid application step of applying a congealing liquid by a liquid membrane drop method to the porous substrate coated with the membrane-forming solution, and a solvent removal step of removing the solvent from the congealed microporous layer.

Abstract: To provide a photoelectric conversion device having a high photoelectric conversion efficiency, a photoelectric conversion device 21 includes a substrate 1, a plurality of lower electrodes 2 on the substrate 1 comprising a metal element, a plurality of photoelectric conversion layers 33 comprising a chalcogen compound semiconductor formed on the plurality of lower electrodes 2 and separated from one another on the lower electrodes 2, a metal-chalcogen compound layer 8 comprising the metal element and a chalcogen element included in the chalcogen compound semiconductor formed between the lower electrode 2 and the photoelectric conversion layer 33, an upper electrode 5 formed on the photoelectric conversion layer 33, and a connection conductor 7 electrically connecting, in a plurality of the photoelectric conversion layers 33, the upper electrode 5 to the lower electrode 2 without interposition of the metal-chalcogen compound layer 8.

Abstract: To provide a photoelectric conversion device having a high photoelectric conversion efficiency, a photoelectric conversion device 21 includes a substrate 1, a plurality of lower electrodes 2 on the substrate 1 comprising a metal element, a plurality of photoelectric conversion layers 33 comprising a chalcogen compound semiconductor formed on the plurality of lower electrodes 2 and separated from one another on the lower electrodes 2, a metal-chalcogen compound layer 8 comprising the metal element and a chalcogen element included in the chalcogen compound semiconductor formed between the lower electrode 2 and the photoelectric conversion layer 33, an upper electrode 5 formed on the photoelectric conversion layer 33, and a connection conductor 7 electrically connecting, in a plurality of the photoelectric conversion layers 33, the upper electrode 5 to the lower electrode 2 without interposition of the metal-chalcogen compound layer 8.