Abstract: [Object] To provide an image capturing element and an image capturing apparatus in which an image capturing optical system can be thinned without degrading image capturing properties. [Solving Means] An image capturing element according to an embodiment of the present technology includes an on-chip lens, a low refractive index layer and an infrared absorption layer. The on-chip lens is composed of a high refractive index material. The low refractive index layer is formed flatly on the on-chip lens and is composed of a low refractive index material. The infrared absorption layer is laminated above the low refractive index layer and is composed of an infrared absorption material.

Abstract: This invention relates to capturing an image of a subject as a three-dimensional image using a single image-capturing apparatus. The image-capturing apparatus includes a first polarization means, a lens system, and an image-capturing device array having a second polarization means. The first polarization means includes first and second regions arranged along a first direction, and the second polarization means includes multiple third and fourth regions arranged alternately along a second direction. First region transmission light having passed the first region passes the third region and reaches the image-capturing device, and second region transmission light having passed the second region passes the fourth region and reaches the image-capturing device. Thus, an image is captured to obtain a three-dimensional image in which a distance between a barycenter BC1 of the first region and a barycenter BC2 of the second region is a base line length of parallax between two eyes.

Abstract: The present invention relates to a solid-state imaging element which is able to provide the solid-state imaging element having a polarizing element having a simple configuration and structure based on a wire grid polarizer technique, a solid-state imaging device, an imaging apparatus, and a method of manufacturing a polarizing element. The solid-state imaging device includes a plurality of solid-state imaging elements 41 each including a photoelectric conversion element 61 and a polarizing element 70 formed on the light incident side of the photoelectric conversion element 61. The solid-state imaging device includes two or more kinds of polarizing elements 70 having different polarization orientations.

Abstract: An imaging apparatus that forms an image of a light beam transmitted through an imaging lens on an imaging element includes a laminated material that is provided on the imaging element, the light beam being transmitted through the laminated material, the laminated material being provided at a position at which an end portion of an upper surface of the laminated material allows an outermost light beam out of light beams to be transmitted therethrough, the light beams entering a pixel in an outer end portion of the imaging element in an effective pixel area, the position having a width Hopt.

Abstract: An image-capturing device including a lens system and an image-capturing unit upon which light having passed through the lens system is incident, wherein the image-capturing unit includes a plurality of first image-capturing elements configured to receive light in a first wavelength band and a plurality of second image-capturing elements configured to receive light in a second wavelength band which is different from the first wavelength band, and wherein the lens system or the image-capturing unit is provided with an optical element so that the light in the first wavelength band of which light quantity is less than the light quantity of the light in the second wavelength band reaches the image-capturing unit.

Abstract: An image-capturing device includes an image-capturing unit 30 including a first image-capturing element 41, a second image-capturing element 51, a third image-capturing element 61, and a fourth image-capturing element 71, and includes an image processing unit 11, wherein a sensitivity of the fourth image-capturing element 71 is less than sensitivities of the first image-capturing element 41 to the third image-capturing element 61, and the image processing unit 11 generates high sensitivity image data on the basis of outputs from the first image-capturing element 41 to the third image-capturing element 61, and generates low sensitivity image data on the basis of an output from the fourth image-capturing element 71, and further, the image processing unit 11 generates a combined image using high sensitivity image data corresponding to a low illumination image area in the low illumination image area obtained from the low sensitivity image data or the high sensitivity image data, and using low sensitivity image da

Abstract: [Object] To provide a chemical sensor capable of detecting a biomolecule with high accuracy, a chemical sensor module, a biomolecule detection apparatus, and a biomolecule detection method. [Solving Means] A chemical sensor includes a substrate, an on-chip lens, and a flattening layer. On the substrate, a plurality of photodiodes are formed to be arranged in a planar form. The on-chip lens collects incident light to the photodiodes and is provided on the substrate. The flattening layer covers and flattens the on-chip lens to form a probe holding surface for holding a probe material.

Abstract: [Object] To provide a chemical sensor, a biomolecule detection apparatus, and a biomolecule detection method capable of detecting a biomolecule with high accuracy. [Solving Means] A chemical sensor according to the present invention includes a substrate, an optical layer, and an intermediate layer. On the substrate, a plurality of photodiodes is arranged in a planar form. The optical layer is laminated on the substrate and has a waveguide formed therein which guides incident light to each of the photodiodes. The intermediate layer is laminated on the optical layer and has a probe holding area formed thereon for each waveguide, and the probe holding area is capable of holding a probe material.

Abstract: A solid state imaging device includes a substrate having a plurality of pixels and a plurality of on-chip lenses arranged above the substrate, each on-chip lens having a lens surface formed by subjecting a transparent photosensitive film to exposure using a mask having a gradation pattern and development so that the lens surface serves to correct shading in accordance with the gradation pattern.

Abstract: A solid state imaging device includes a substrate having a plurality of pixels and a plurality of on-chip lenses arranged above the substrate, each on-chip lens having a lens surface formed by subjecting a transparent photosensitive film to exposure using a mask having a gradation pattern and development so that the lens surface serves to correct shading in accordance with the gradation pattern.

Abstract: The present technique relates to a display control device, a method, and a program that can improve user's operability of a free-cursor type user interface. An imaging unit outputs an RGB image based on a pixel signal corresponding to a visible light among light input through a lens and an IR image based on a pixel signal corresponding to an infrared light among light input through the lens. An ROI set unit sets a movement area of an infrared light source in the IR image based on the RGB image, and a display control unit controls a cursor movement amount on a display unit according to movement of the infrared light source in the movement area. The present technique can be applied to a television set that monitors a viewing condition of a viewer, for example.

Abstract: This invention relates to capturing an image of a subject as a three-dimensional image using a single image-capturing apparatus. The image-capturing apparatus includes a first polarization means, a lens system, and an image-capturing device array having a second polarization means. The first polarization means includes first and second regions arranged along a first direction, and the second polarization means includes multiple third and fourth regions arranged alternately along a second direction. First region transmission light having passed the first region passes the third region and reaches the image-capturing device, and second region transmission light having passed the second region passes the fourth region and reaches the image-capturing device. Thus, an image is captured to obtain a three-dimensional image in which a distance between a barycenter BC1 of the first region and a barycenter BC2 of the second region is a base line length of parallax between two eyes.

Abstract: The present invention relates to a solid-state imaging element which is able to provide the solid-state imaging element having a polarizing element having a simple configuration and structure based on a wire grid polarizer technique, a solid-state imaging device, an imaging apparatus, and a method of manufacturing a polarizing element. The solid-state imaging device includes a plurality of solid-state imaging elements 41 each including a photoelectric conversion element 61 and a polarizing element 70 formed on the light incident side of the photoelectric conversion element 61. The solid-state imaging device includes two or more kinds of polarizing elements 70 having different polarization orientations.

Abstract: A stereoscopic imaging method where a pixel matrix is divided into groups such that parallax information is received by one pixel group and original information is received by another pixel group. The parallax information may, specifically, be based on polarized information received by subgroups of the one pixel, group and by processing all of the information received multiple images are rendered by the method.

Abstract: An exposure mask forms a three-dimensional shape in simple structure and obtainable sufficient number of gray scales by exposure. In an exposure mask (M) for use in an exposure apparatus (S), the present invention is provided such that a plurality of pattern blocks constituted by a pair of a light blocking pattern blocking light emitted from the exposure apparatus (S) and a transmissive pattern transmitting the light are continuously arranged while a pitch of the continuous pattern blocks is constant and a ratio of the light blocking pattern to the transmissive pattern is varied gradually.

Abstract: An etching stopper film is formed on top of a first insulating film. The etching stopper film is a film formed by depositing at least two films, made of constituent materials identical in quality to each other, one another. Subsequently, a first opening pattern is formed in the etching stopper film. Subsequently, a second insulating film is formed on top of the etching stopper film. Subsequently, a mask pattern is formed on top of the second insulating film. Subsequently, the second insulating film is etched with the use of the mask pattern as a mask to be followed by etching of the first insulating film with the use of the etching stopper film as a mask.

Abstract: There is provided a method for correcting a photo mask, which allows the difference between a test mask and a corrected mask with respect to an error of line width depending on coarse/dense pattern to be decreased when the photo masks are corrected by optical proximity effect correction.

Abstract: An antireflection film wherein, even where exposure light enters obliquely in a liquid immersion lithography technique, a sufficiently reduced reflectance can be achieved at the interface between a resist layer and a silicon substrate. A two-layer antireflection film is used in exposure by an exposure system having a wavelength of 190 to 195 nm and a numerical aperture of 1.0 or less and formed between the resist layer and the silicon substrate. Where complex refractive indices N1 and N2 and film thicknesses of upper and lower layers of the antireflection film are represented by n1-k1i, n2-k2i and d1, d2, respectively, and a predetermined combination of values of [n10, k10, d10, n20, k20, d20] is selected, n1, k1, d1, n2, k2 and d2 satisfy {(n1-n10)/(n1m-n10)}2+{(k1-k10)/(k1m-k10)}2+{(d1-d10)/(d1m-d10)}2+{(n2-n20)/(n2m-n20)}2+{(k2-k20)/(k2m-k20)}2+{(d2-d20)/(d2m-d20)}2?1.

Abstract: An etching stopper film is formed on top of a first insulating film. The etching stopper film is a film formed by depositing at least two films, made of constituent materials identical in quality to each other, one another. Subsequently, a first opening pattern is formed in the etching stopper film. Subsequently, a second insulating film is formed on top of the etching stopper film. Subsequently, a mask pattern is formed on top of the second insulating film. Subsequently, the second insulating film is etched with the use of the mask pattern as a mask to be followed by etching of the first insulating film with the use of the etching stopper film as a mask.

Abstract: An antireflective film is provided between a resist layer and a silicon oxide layer formed on a surface of a silicon substrate, for exposure of the resist layer in an exposure system having a wavelength of 190 nm to 195 nm and a numerical aperture NA of 0.93 to 1.2. Assuming that the complex refractive indexes of upper and lower layers constituting the antireflective film are N1 (=n1?k1i) and N2 (=n2?k2i), respectively, and the thicknesses of both layers are d1 and d2, when a predetermined combination of values of [n10, k10, d10, n20, k20, d20] is selected, n1, k1, d1, n2, k2, and d2 satisfy the relational expression {(n1?n10)/(n1m?n10)}2+{(k1?k10)/(k1m?k10)}2+{(d1?d10)/(d1m?d10)}2+{(n2?n20)/(n2m?n20)}2+{(k2?k20)/(k2m?k20)}2+{(d2?d20)/(d2m?d20)}2?1.