Abstract: The present invention relates to VEGF-binding agents, DLL4-binding agents, VEGF/DLL4 bispecific binding agents, and methods of using the agents for treating diseases such as cancer. The present invention provides antibodies that specifically bind human VEGF, antibodies that specifically bind human DLL4, and bispecific antibodies that specifically bind human VEGF and/or human DLL4. The present invention further provides methods of using the agents to inhibit tumor growth. Also described are methods of treating cancer comprising administering a therapeutically effect amount of an agent or antibody of the present invention to a patient having a tumor or cancer.

Abstract: A fiber sensor includes a light guide provided with a plurality of detection portions in a longitudinal direction of the light guide, and a plurality of detection targets each having a light absorber that absorbs light of a specific wavelength, each of the plurality of detection portions including at least one detection target. Each of the light absorbers contains a color material that reduces an influence of an interaction caused by each detection target at another detection portion existing in the light guide.

Abstract: Semiconductor base including: silicon-based substrate; buffer layer including first and second layers alternately on silicon-based substrate, first layer made of nitride-based compound semiconductor containing first material, second layer made of nitride-based compound semiconductor containing second material having larger lattice constant than first material; channel layer on buffer layer and made of nitride-based compound semiconductor containing second material, buffer layer has: first composition graded layer between at least one of first layers and second layer immediately thereabove, made of nitride-based compound semiconductor whose composition ratio of second material is increased gradually upward, whose composition ratio of first material is decreased gradually upward; second composition graded layer between at least one of second layers and first layer immediately thereabove, made of nitride-based compound semiconductor whose first material is increased gradually upward, whose composition ratio of s

Abstract: Provided are a timepiece movement and a timepiece allowing mounting of a wireless communication device in the timepiece and capable of avoiding generation of restrictions to the design of the timepiece. A movement is arranged on the inner side of a timepiece case having a case back, and drives indicator hands. The movement uses an electric wave from the outside as a power source and is equipped with an RFID tag communicating with an external reader.

Abstract: A shape estimation device includes an input circuit, a storage circuit and an arithmetic circuit. The input circuit receives light amount information being a relationship between a wavelength and a light amount. The light amount information is acquired by using a sensor configured such that the light amount to be detected with respect to the wavelength corresponding to each of sensing parts varies in accordance with a shape of each of the sensing parts. The storage circuit stores a relationship among the shape, the wavelength and the light amount with respect to each sensing part. The arithmetic circuit calculates the shape of each sensing part, based on the light amount information, and a light amount estimation value being a relationship between the wavelength and the light amount.

Abstract: The present disclosure provides tissue-specific Wnt signal enhancing molecules, and related methods of using these molecules to increase Wnt signaling in targeted tissues.

Abstract: A substrate for semiconductor device includes a substrate, a buffer layer which is provided on the substrate and made of a nitride semiconductor, and a device active layer which is provided on the buffer layer and composed of a nitride semiconductor layer, wherein the buffer layer contains carbon and iron, a carbon concentration of an upper surface of the buffer layer is higher than a carbon concentration of a lower surface of the buffer layer, and an iron concentration of the upper surface of the buffer layer is lower than an iron concentration of the lower surface of the buffer layer. As a result, the substrate for semiconductor device can reduce a leak current in a lateral direction at the time of a high-temperature operation while suppressing a leak current in a longitudinal direction.

Abstract: A semiconductor base substance includes: a substrate; a buffer layer which is made of a nitride semiconductor and provided on the substrate; and a channel layer which is made of a nitride semiconductor and provided on the buffer layer, wherein the buffer layer includes: a first region which is provided on the substrate side and has boron concentration higher than acceptor element concentration; and a second region which is provided on the first region, and has boron concentration lower than that in the first region and acceptor element concentration higher than that in the first region. As a result, the semiconductor base substance which can obtain a high pit suppression effect while maintaining a high longitudinal breakdown voltage is provided.

Abstract: Bend information computation apparatus includes: an input unit having detected light quantity information representing a relation between a wavelength in a predetermined wavelength band and a light quantity, the detected light quantity information being acquired using a light guide having at least one light absorber for changing a light quantity of light transmitted through the light guide according to a bent state of the light absorber to detect a light quantity after a change; and an arithmetic operator for computing bend information representing a bend direction and a bend magnitude of each light absorber based on the detected light quantity information, an absorption spectrum of each light absorber, a bend coefficient of each light absorber that varies according to a bend direction and a bend magnitude of each light absorber, and a unique characteristic value of each light absorber including a value for a correction relating to the bend coefficient.

Abstract: A semiconductor device substrate including: a substrate; a buffer layer which is provided on the substrate and made of a nitride semiconductor; and a device active layer which is formed of a nitride semiconductor layer provided on the buffer layer, the semiconductor device substrate in that the buffer layer includes: a first region which contains carbon and iron; a second region which is provided on the first region and has average concentration of iron lower than that in the first region and average concentration of carbon higher than that in the first region, and the average concentration of the carbon in the second region is lower than the average concentration of the iron in the first region. The semiconductor device substrate which can suppress a transverse leak current in a high-temperature operation of a device while suppressing a longitudinal leak current and can inhibit a current collapse phenomenon is provided.

Abstract: A method of manufacturing an epitaxial wafer having an epitaxial layer on a silicon-based substrate, the method of manufacturing the epitaxial wafer including epitaxially growing a semiconductor layer on the silicon-based substrate after applying terrace processing to an outer peripheral portion of the silicon-based substrate. As a result, the method of manufacturing the epitaxial wafer having the epitaxial layer on the silicon-based substrate in which an epitaxial wafer which is completely free from cracks can be obtained, is provided.

Abstract: The present invention relates to VEGF-binding agents, DLL4-binding agents, VEGF/DLL4 bispecific binding agents, and methods of using the agents for treating diseases such as cancer. The present invention provides antibodies that specifically bind human VEGF, antibodies that specifically bind human DLL4, and bispecific antibodies that specifically bind human VEGF and/or human DLL4. The present invention further provides methods of using the agents to inhibit tumor growth. Also described are methods of treating cancer comprising administering a therapeutically effect amount of an agent or antibody of the present invention to a patient having a tumor or cancer.

Abstract: Semiconductor base including: silicon-based substrate; buffer layer including first and second layers alternately on silicon-based substrate, first layer made of nitride-based compound semiconductor containing first material, second layer made of nitride-based compound semiconductor containing second material having larger lattice constant than first material; channel layer on buffer layer and made of nitride-based compound semiconductor containing second material, buffer layer has: first composition graded layer between at least one of first layers and second layer immediately thereabove, made of nitride-based compound semiconductor whose composition ratio of second material is increased gradually upward, whose composition ratio of first material is decreased gradually upward; second composition graded layer between at least one of second layers and first layer immediately thereabove, made of nitride-based compound semiconductor whose first material is increased gradually upward, whose composition ratio of s

Abstract: A bend information computation apparatus includes a light source, a first light guide, a detection target, a second light guide, a switching member, a driver, a detector, a generator, and a bend information arithmetic operator. The detector is configured to detect first and second spectrum change. The generator is configured to calculate, based on the second spectrum change, suppression information. The bend information arithmetic operator is configured to calculate change information based on the first spectrum change and the suppression information and to compute bend information based on the change information.

Abstract: A bend information computation apparatus includes a generation unit and a bend information arithmetic operator. The generation unit generates suppression information that suppresses first information representing a variation in spectrum not derived from a bend of a detection target provided in a light guide on the basis of light source spectrum information. The bend information arithmetic operator operates second information representing a variation in spectrum derived from the bend on the basis of a spectrum of light guided by the light guide, operates third information representing a variation in spectrum derived only from the bend on the basis of the second information and the suppression information, and operates bend information on the basis of the third information.

Abstract: A drawing apparatus includes a processor generating data for drawing according to a type of a target on which drawing is performed. The target is placed in a drawable area. The drawing apparatus further includes a drawing head drawing on the target placed in the drawable area on a basis of the data for drawing generated by the processor.

Abstract: An epitaxial substrate for electronic devices, including: a Si-based substrate; an AlN initial layer provided on the Si-based substrate; and a buffer layer provided on the AlN initial layer, wherein the roughness Sa of the surface of the AlN initial layer on the side where the buffer layer is located is 4 nm or more. As a result, an epitaxial substrate for electronic devices, in which V pits in a buffer layer structure can be suppressed and longitudinal leakage current characteristics can be improved when an electronic device is fabricated therewith, is provided.

Abstract: The present invention relates to VEGF-binding agents, DLL4-binding agents, VEGF/DLL4 bispecific binding agents, and methods of using the agents for treating diseases such as cancer. The present invention provides antibodies that specifically bind human VEGF, antibodies that specifically bind human DLL4, and bispecific antibodies that specifically bind human VEGF and/or human DLL4. The present invention further provides methods of using the agents to inhibit tumor growth. Also described are methods of treating cancer comprising administering a therapeutically effect amount of an agent or antibody of the present invention to a patient having a tumor or cancer.

Abstract: A bend information computation apparatus includes a light source, a first light guide, a detection target, a second light guide, a switching member, a driver, a detector, a generator, and a bend information arithmetic operator. The detector is configured to detect first and second spectrum change. The generator is configured to calculate, based on the second spectrum change, suppression information. The bend information arithmetic operator is configured to calculate change information based on the first spectrum change and the suppression information and to compute bend information based on the change information.

Abstract: A semiconductor base substance includes: a substrate; a buffer layer which is made of a nitride semiconductor and provided on the substrate; and a channel layer which is made of a nitride semiconductor and provided on the buffer layer, wherein the buffer layer includes: a first region which is provided on the substrate side and has boron concentration higher than acceptor element concentration; and a second region which is provided on the first region, and has boron concentration lower than that in the first region and acceptor element concentration higher than that in the first region. As a result, the semiconductor base substance which can obtain a high pit suppression effect while maintaining a high longitudinal breakdown voltage is provided.