Patents by Inventor Ken Wen-Chien Fu
Ken Wen-Chien Fu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 9184334Abstract: A light emitting diode (LED) structure comprises a first dopant region, a dielectric layer on top of the first dopant region, a bond pad layer on top of a first portion the dielectric layer, and an LED layer having a first LED region and a second LED region. The bond pad layer is electrically connected to the first dopant region. The first LED region is electrically connected to the bond pad layer.Type: GrantFiled: August 5, 2014Date of Patent: November 10, 2015Assignee: TSMC Solid State Lighting Ltd.Inventors: Shouli Steve Hsia, Chih-Kuang Yu, Ken Wen-Chien Fu, Hung-Yi Kuo, Hung-Chao Kao, Ming-Feng Wu, Fu-Chih Yang
-
Publication number: 20140339579Abstract: A light emitting diode (LED) structure comprises a first dopant region, a dielectric layer on top of the first dopant region, a bond pad layer on top of a first portion the dielectric layer, and an LED layer having a first LED region and a second LED region. The bond pad layer is electrically connected to the first dopant region. The first LED region is electrically connected to the bond pad layer.Type: ApplicationFiled: August 5, 2014Publication date: November 20, 2014Inventors: Shouli Steve Hsia, Chih-Kuang Yu, Ken Wen-Chien Fu, Hung-Yi Kuo, Hung-Chao Kao, Ming-Feng Wu, Fu-Chih Yang
-
Patent number: 8809899Abstract: A light emitting diode (LED) structure comprises a first dopant region, a dielectric layer on top of the first dopant region, a bond pad layer on top of a first portion the dielectric layer, and an LED layer having a first LED region and a second LED region. The bond pad layer is electrically connected to the first dopant region. The first LED region is electrically connected to the bond pad layer.Type: GrantFiled: November 18, 2013Date of Patent: August 19, 2014Assignee: TSMC Solid State Lighting Ltd.Inventors: Shouli Steve Hsia, Chih-Kuang Yu, Ken Wen-Chien Fu, Hung-Yi Kuo, Hung-Chao Kao, Ming-Feng Wu, Fu-Chih Yang
-
Patent number: 8796804Abstract: An integrated circuit structure includes a substrate and a metallization layer over the substrate. The metallization layer includes a dielectric layer and metal lines in the dielectric layer. The integrated circuit structure further includes a sensing element over the metallization layer. The sensing element may be formed in passivation layers.Type: GrantFiled: April 22, 2008Date of Patent: August 5, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ke Chun Liu, Kuan-Chieh Huang, Chin-Min Lin, Ken Wen-Chien Fu, Mingo Lin
-
Publication number: 20140061688Abstract: A light emitting diode (LED) structure comprises a first dopant region, a dielectric layer on top of the first dopant region, a bond pad layer on top of a first portion the dielectric layer, and an LED layer having a first LED region and a second LED region. The bond pad layer is electrically connected to the first dopant region. The first LED region is electrically connected to the bond pad layer.Type: ApplicationFiled: November 18, 2013Publication date: March 6, 2014Inventors: Shouli Steve Hsia, Chih-Kuang Yu, Ken Wen-Chien Fu, Hung-Yi Kuo, Hung-Chao Kao, Ming-Feng Wu, Fu-Chih Yang
-
Patent number: 8624311Abstract: A method to fabricate an image sensor includes providing a semiconductor substrate having a pixel region and a periphery region, forming a light sensing element on the pixel region, and forming at least one transistor in the pixel region and at least one transistor in the periphery region. The step of forming the at least one transistor in the pixel region and periphery region includes forming a gate electrode in the pixel region and periphery region, depositing a dielectric layer over the pixel region and periphery region, partially etching the dielectric layer to form sidewall spacers on the gate electrode and leaving a portion of the dielectric layer overlying the pixel region, and forming source/drain (S/D) regions by ion implantation.Type: GrantFiled: September 21, 2011Date of Patent: January 7, 2014Inventors: Chun-Chieh Chuang, Chih-Min Lin, Ken Wen-Chien Fu, Dun-Nian Yaung
-
Patent number: 8587018Abstract: A light emitting diode (LED) structure comprises a first dopant region, a dielectric layer on top of the first dopant region, a bond pad layer on top of a first portion the dielectric layer, and an LED layer having a first LED region and a second LED region. The bond pad layer is electrically connected to the first dopant region. The first LED region is electrically connected to the bond pad layer.Type: GrantFiled: June 24, 2011Date of Patent: November 19, 2013Assignee: TSMC Solid State Lighting Ltd.Inventors: Shouli Steve Hsia, Chih-Kuang Yu, Ken Wen-Chien Fu, Hung-Yi Kuo, Hung-Chao Kao, Ming-Feng Wu, Fu-Chih Yang
-
Publication number: 20120326198Abstract: A light emitting diode (LED) structure comprises a first dopant region, a dielectric layer on top of the first dopant region, a bond pad layer on top of a first portion the dielectric layer, and an LED layer having a first LED region and a second LED region. The bond pad layer is electrically connected to the first dopant region. The first LED region is electrically connected to the bond pad layer.Type: ApplicationFiled: June 24, 2011Publication date: December 27, 2012Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Shouli Steve HSIA, Chih-Kuang YU, Ken Wen-Chien FU, Hung-Yi KUO, Hung-Chao KAO, Ming-Feng WU, Fu-Chih YANG
-
Publication number: 20120007156Abstract: A method to fabricate an image sensor includes providing a semiconductor substrate having a pixel region and a periphery region, forming a light sensing element on the pixel region, and forming at least one transistor in the pixel region and at least one transistor in the periphery region. The step of forming the at least one transistor in the pixel region and periphery region includes forming a gate electrode in the pixel region and periphery region, depositing a dielectric layer over the pixel region and periphery region, partially etching the dielectric layer to form sidewall spacers on the gate electrode and leaving a portion of the dielectric layer overlying the pixel region, and forming source/drain (S/D) regions by ion implantation.Type: ApplicationFiled: September 21, 2011Publication date: January 12, 2012Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chun-Chieh Chuang, Chin-Min Lin, Ken Wen-Chien Fu, Dun-Nian Yaung
-
Patent number: 8030114Abstract: A method to fabricate an image sensor includes providing a semiconductor substrate having a pixel region and a periphery region, forming a light sensing element on the pixel region, and forming at least one transistor in the pixel region and at least one transistor in the periphery region. The step of forming the at least one transistor in the pixel region and periphery region includes forming a gate electrode in the pixel region and periphery region, depositing a dielectric layer over the pixel region and periphery region, partially etching the dielectric layer to form sidewall spacers on the gate electrode and leaving a portion of the dielectric layer overlying the pixel region, and forming source/drain (S/D) regions by ion implantation.Type: GrantFiled: April 10, 2007Date of Patent: October 4, 2011Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Chieh Chuang, Chin-Min Lin, Ken Wen-Chien Fu, Dun-Nian Yaung
-
Publication number: 20090263674Abstract: An integrated circuit structure includes a substrate and a metallization layer over the substrate. The metallization layer includes a dielectric layer and metal lines in the dielectric layer. The integrated circuit structure further includes a sensing element over the metallization layer. The sensing element may be formed in passivation layers.Type: ApplicationFiled: April 22, 2008Publication date: October 22, 2009Inventors: Ke Chun Liu, Kuan-Chieh Huang, Chin-Min Lin, Ken Wen-Chien Fu, Mingo Lin
-
Publication number: 20080179640Abstract: A method to fabricate an image sensor includes providing a semiconductor substrate having a pixel region and a periphery region, forming a light sensing element on the pixel region, and forming at least one transistor in the pixel region and at least one transistor in the periphery region. The step of forming the at least one transistor in the pixel region and periphery region includes forming a gate electrode in the pixel region and periphery region, depositing a dielectric layer over the pixel region and periphery region, partially etching the dielectric layer to form sidewall spacers on the gate electrode and leaving a portion of the dielectric layer overlying the pixel region, and forming source/drain (S/D) regions by ion implantation.Type: ApplicationFiled: April 10, 2007Publication date: July 31, 2008Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chun-Chieh Chuang, Chin-Min Lin, Ken Wen-Chien Fu, Dun-Nian Yaung