Abstract: Example wing-shaped support members for enhancing semiconductor device probes and methods to form the same are disclosed. A disclosed example semiconductor device probe includes a finger having a first end and a second end. The example probe further includes a tip having a base and a pointed end. The base is joined to the first end of the finger and the tip tapers from the base to the pointed end. The probe also includes a support member on the tip to increase a rigidity of the tip.

Abstract: Example wing-shaped support members for enhancing semiconductor device probes and methods to form the same are disclosed. A disclosed example semiconductor device probe includes a finger having a first end and a second end. The example probe further includes a tip having a base and a pointed end. The base is joined to the first end of the finger and the tip tapers from the base to the pointed end. The probe also includes a support member on the tip to increase a rigidity of the tip.

Abstract: The preferred embodiments of the present invention provide non-invasive approaches of testing ICs that use photon emission from semiconductor devices to provide results of various testing procedures. For example, instead of reading the results from the built-in-self-test (BIST) circuitry using micro-mechanical probes, the results from BIST may be represented using an array of circuit elements configured to emit photons. Accordingly, by reading the photon emission of this BIST circuitry, the results of the testing procedures may be measured non-invasively. In addition, the preferred embodiments also may use an external light source to initiate on-chip testing functions so that the number of external connections to the IC may be further minimized. For example, instead of providing input signals to BIST circuitry using micro-mechanical probes, pulsed lasers may provide desired input signals.

Abstract: The preferred embodiments of the present invention provide non-invasive approaches of testing ICs that use photon emission from semiconductor devices to provide results of various testing procedures. For example, instead of reading the results from the built-in-self-test (BIST) circuitry using micro-mechanical probes, the results from BIST may be represented using an array of circuit elements configured to emit photons. Accordingly, by reading the photon emission of this BIST circuitry, the results of the testing procedures may be measured non-invasively. In addition, the preferred embodiments also may use an external light source to initiate on-chip testing functions so that the number of external connections to the IC may be further minimized. For example, instead of providing input signals to BIST circuitry using micro-mechanical probes, pulsed lasers may provide desired input signals.

Abstract: A semiconductor die is enveloped by an ambient gas that will react to the presence of a particular wave length of light. A laser beam is focused on the edge of the die to deposit a dielectric coating. The laser beam or the die is rotated until the dielectric coating covers the entire die edge. The dielectric coating acts as a seal that is impervious to water and other contamination that can reduce the die reliability. The dielectric coating also electrically insulates the die from its surroundings.

Abstract: A CMOS semiconductor device is programmed by a laser beam which causes a PN junction in a silicon substrate to be permanently altered. This produces a leakage path between a program node and a tank region in the substrate; the program node can be an input to a transistor in a CMOS circuit, for example, so this node will always hold the transistor on or off depending whether or not it has been laser-programmed. Preferably, the tank region is of opposite type compared to the substrate, so the program node is electrically isolated from the substrate in either case.

Abstract: A CMOS semiconductor device is programmed by a laser beam which causes a PN junction in a silicon substrate to be permanently altered. This produces a leakage path between a program node and a tank region in the substrate; the program node can be an input to a transistor in a CMOS circuit, for example, so this node will always hold the transistor on or off depending whether or not it has been laser-programmed. Preferably, the tank region is of opposite type compared to the substrate, so the program node is electrically isolated from the substrate in either case.

Abstract: A device or die is presented which uses laser deposited leads, with a filler to bridge the gap between the die and the lead frame. The filler may be oxide, poly amide, a combination of oxide layers and poly amide layers, plastic or a plastic which has plastic coated beads of metal. The die and lead frame are placed on a heat spreader. Leads are formed over the filler material from bond pads on the lead frame to bond pads on the die. Various protective materials are placed over the die to protect it from the package. Over the protective material is another heat spreader or other device that is required to make the die function better. Typical devices are batteries, capacitors, or other die. Finally, the structure is encapsulated in a package of non-conductive material. This structure is more stable than presently available structures because the active element, the die, is not in direct contact with the plastic package.