Abstract: The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1, means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1, an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5A, wherein at least two kinds of processing gases having different composition ratios of O2 or N2 are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.

Abstract: The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1, means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1, an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5A, wherein at least two kinds of processing gases having different composition ratios of O2 or N2 are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.

Abstract: The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1, means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1, an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5A, wherein at least two kinds of processing gases having different composition ratios of O2 or N2 are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.

Abstract: In processing a magnetic film composed for example of Fe, Co or Ni formed on a substrate and a nonvolatile metal containing the same in a vacuum reactor using a plasma generating gas for generating plasma and a gas containing C and O, a power applied to an antenna for generating plasma is time-modulated, wherein the feeding of gas containing C and O to the vacuum reactor is synchronized with the time-modulated antenna power so that the supply of gas containing C and O to the vacuum reactor is suppressed when the antenna power is high and the gas containing C and O is fed to the vacuum reactor when the antenna power is low.

Abstract: The invention provides a plasma processing apparatus which is based upon a dry etching apparatus and which can inhibit the contamination of a work piece caused by sputtering onto a wall of a vacuum chamber, the occurrence of a foreign matter, the increase of a running cost for replacing the walls of the vacuum chamber and the deterioration of a rate of operation.

Abstract: The present invention provides a heat treatment apparatus which can reduce a surface roughing of a processed substrate while keeping a heat efficiency high, even in the case of heating a sample to be heated to 1200° C. or higher. The present invention is a heat treatment apparatus carrying out a heat treatment of a sample to be heated, wherein a plasma generated by a glow electric discharge is used as a heating source, and the sample to be heated is indirectly heated.

Abstract: In processing a magnetic film composed for example of Fe, Co or Ni formed on a substrate and a nonvolatile metal containing the same in a vacuum reactor using a plasma generating gas for generating plasma and a gas containing C and O, a power applied to an antenna for generating plasma is time-modulated, wherein the feeding of gas containing C and O to the vacuum reactor is synchronized with the time-modulated antenna power so that the supply of gas containing C and O to the vacuum reactor is suppressed when the antenna power is high and the gas containing C and O is fed to the vacuum reactor when the antenna power is low.

Abstract: The present invention provides means for controlling the temperature of a semiconductor wafer rapidly and uniformly in plane during etching processing by a large quantity of input heat by use of a refrigerating system by the heat of evaporation. A ring-shaped refrigerant passage is formed in a sample stand. Since the heat transfer rate and pressure loss of a refrigerant increase from a refrigerant supply port to a refrigerant ejection port as dryness degrees increase, these must be restricted. Therefore, constructionally, a supply refrigerant quantity is controlled to prevent the refrigerant from completely evaporating within the refrigerant passage, and the sectional areas of the refrigerant passage increase successively from a first passage to a third passage.

Abstract: The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1, means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1, an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5A, wherein at least two kinds of processing gases having different composition ratios of O2 or N2 are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.

Abstract: An arrangement is provided for suppressing interference phenomenon on the surface of a sample that deteriorates the detection accuracy upon detecting the time variation of plasma conditions such as plasma space distribution or the processing status of the sample. For example, light scattering element for diffusing and transmitting incident light and a convex lens are arranged on a front stage of an optical fiber light receiving unit connected to a photodetector disposed on an opposite side from the sample for observing the emission of plasma. This serves to prevent the changes in light quantity accompanying the interference effect caused by the changes in thin film thickness on the surface of the sample from reaching the photodetector. An arrangement is also provided to prevent the light scattering element from being directly exposed to the plasma to prevent alteration of the light scattering element.

Abstract: A plasma processing method using plasma includes steps of applying current to a coil and introducing gas into a processing chamber, applying a bias power that does not generate plasma, applying a source power to generate plasma so that a plasma density distribution is high above an outer circumference of a semiconductor wafer and low above a center of the semiconductor wafer, and forming a shape of a sheath layer having a positive ion space charge directly above the semiconductor wafer so as to be convex in an upper direction from the semiconductor wafer, thereby eliminating foreign particles trapped in a boundary of the sheath layer having a positive ion space charge directly above the semiconductor wafer, generating plasma for processing the semiconductor wafer under a condition different from the conditions of the previous steps.

Abstract: A plasma processing method of subjecting a substance to plasma processing by using a semiconductor device manufacturing apparatus including a process chamber, a unit for supplying gas to the process chamber, an exhausting unit to reduce pressure in the process chamber, a high frequency power source for plasma generation, a coil for generating a magnetic field, and a mounted electrode for mounting the substance to be processed. The method includes steps of subjecting the substance to a predetermined plasma processing, changing the magnetic field distribution, so as to make a plasma distribution of the process chamber with respect to the surface of the substance to be processed, in a convex form, at a time of igniting the plasma and after completion of the predetermined plasma processing, as compared with a plasma distribution with respect to the surface of the substance to be processed during the predetermined plasma processing.

Abstract: The invention provides a plasma processing apparatus for measuring the etching quantity of the material being processed and detecting the end point of etching using optical interference on the surface of a sample being processed, so as to simultaneously realize long life and ensure sufficient light to be received via a light transmitting unit, to enable long term stable operation and to improve the processing accuracy via accurate etching quantity detection.

Abstract: In a plasma processing apparatus provided with control means, gas supply means includes a first gas supply path for supplying a vent gas into a processing chamber by way of a shower plate and a second gas supply path for supplying a vent gas into the processing chamber without via the shower plate, and the control means is capable of adjusting a flow rate of the vent gas of at least one of the first and second gas supply paths in such a manner that a pressure on a back side of the shower plate becomes a pressure that is a positive pressure relative to a pressure in the processing chamber and less than a withstand pressure of the shower plate.

Abstract: There is provided a means for uniformly controlling the in-plane temperature of a semiconductor wafer at high speed in a high heat input etching process. A refrigerant channel structure in a circular shape is formed in a sample stage. Due to a fact that a heat transfer coefficient of a refrigerant is largely changed from a refrigerant supply port to a refrigerant outlet port, the cross sections of the channel structure is structured so as to be increased from a first channel areas towards a second channel areas in order to make the heat transfer coefficient of the refrigerant constant in the refrigerant channel structure. Thereby, the heat transfer coefficient of the refrigerant is prevented from increasing by reducing the flow rate of the refrigerant at a dry degree area where the heat transfer coefficient of the refrigerant is increased.

Abstract: A semiconductor device manufacturing apparatus includes a process chamber, a conveyance chamber, a conveyance robot, a lock chamber, and a heating unit or temperature adjusting unit for reducing adherence of particles onto a substance to be processed by a thermo-phoretic force. The heating unit enables control of a temperature of the substance to be processed to be higher than a temperature of an inner wall or structural body of the process chamber or the conveyance chamber or the conveyance robot or the lock chamber, in conveying the substance to be processed. The temperature adjusting unit enables adjustment of a temperature of an inner wall or structural body of the process chamber or the conveyance chamber or the lock chamber to be lower than a temperature of the substance to be processed, in conveying the substance to be processed.

Abstract: In processing a magnetic film composed for example of Fe, Co or Ni formed on a substrate and a nonvolatile metal containing the same in a vacuum reactor using a plasma generating gas for generating plasma and a gas containing C and O, a power applied to an antenna for generating plasma is time-modulated, wherein the feeding of gas containing C and O to the vacuum reactor is synchronized with the time-modulated antenna power so that the supply of gas containing C and O to the vacuum reactor is suppressed when the antenna power is high and the gas containing C and O is fed to the vacuum reactor when the antenna power is low.

Abstract: At least a part of a discharging electromagnetic wave is introduced into a processing chamber via a transmission electrode which has characteristics to behave as a dielectric (electric insulator) for the discharging electromagnetic wave, and to behave as a material with electric conductivity for RF bias electromagnetic wave of electromagnetic wave of ion plasma oscillation.

Abstract: An electrostatic adsorption layer, an electrode layer, and an insulating layer are provided in a lower portion of a focus ring disposed in an outer periphery of a substrate stage. A high frequency bias is applied to the focus ring by applying a high frequency electric power to the electrode layer. Further, the focus ring is electrostatically chucked to the electrostatic chucking layer and a heat transfer gas is provided between the focus ring and the electrostatic adsorption layer. Thus, the focus ring can be cooled and the temperature of the focus ring is controlled to a predetermined value. With this structure, an etching characteristic at a wafer edge portion can be maintained favorably for a long time. Also, a yield rate at the edge portion can be favorably maintained for a long time, a wet period can be prolonged, and the device operation rate can be improved.

Abstract: In a plasma processing apparatus conducting surface processing on a sample to be processed with plasma, an upper electrode includes a shower plate having first gas holes bored through it, a conductor plate disposed at back of the shower plate and having second gas holes bored through it, an insulation plate disposed in a center part of the conductor plate and having third gas holes bored through it, and an antenna basic member unit disposed at back of the conductor plate and having a temperature control function unit and a gass distribution unit. First and second minute gaps are formed in a radial direction at an interface between the shower plate and the insulation plate, and at an interface between the insulation plate and the conductor plate, respectively. Centers of the first gas holes are shifted from centers of the third gas holes in a circumference or radial direction.