Patents by Inventor Keng-Ming Kuo
Keng-Ming Kuo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240160828Abstract: A method of generating an IC layout diagram includes receiving an IC layout diagram including a gate region and a gate via, the gate via being positioned at a location within an active region and along a width of the gate region extending across the active region, receiving a first gate resistance value of the gate region, retrieving a second gate resistance value from a resistance value reference based on the location and the width, using the first and second resistance values to determine that the IC layout diagram does not comply with a design specification, and based on the non-compliance with the design specification, modifying the IC layout diagram.Type: ApplicationFiled: January 24, 2024Publication date: May 16, 2024Inventors: Ke-Ying SU, Jon-Hsu HO, Ke-Wei SU, Liang-Yi CHEN, Wen-Hsing HSIEH, Wen-Koi LAI, Keng-Hua KUO, KuoPei LU, Lester CHANG, Ze-Ming WU
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Publication number: 20230345842Abstract: A memory device includes a memory unit and a shielding element disposed on the memory unit. The memory unit includes a bottom electrode, a memory element disposed on the bottom electrode, and a top electrode disposed on the memory element. The shielding element is disposed on the memory unit to deviate an external magnetic field away from the memory element.Type: ApplicationFiled: April 22, 2022Publication date: October 26, 2023Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hung-Cho WANG, Sheng-Huang HUANG, Yuan-Jen LEE, Jiunyu TSAI, Keng-Ming KUO, Jun-Yao CHEN, Harry-Hak-Lay CHUANG
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Publication number: 20230345739Abstract: The present disclosure provides a semiconductor structure, including a memory region, a logic region adjacent to the memory region, a first magnetic tunneling junction (MTJ) cell and a second MTJ cell over the memory region, and a carbon-based layer over the memory region, wherein the carbon-based layer includes a recess between the first MTJ cell and the second MTJ cell.Type: ApplicationFiled: June 21, 2023Publication date: October 26, 2023Inventors: HARRY-HAK-LAY CHUANG, SHENG-HUANG HUANG, KENG-MING KUO, HUNG CHO WANG
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Patent number: 11723219Abstract: The present disclosure provides a semiconductor structure, including a memory region, a logic region adjacent to the memory region, a first magnetic tunneling junction (MTJ) cell and a second MTJ cell over the memory region, and a carbon-based layer over the memory region, wherein the carbon-based layer includes a recess between the first MTJ cell and the second MTJ cell.Type: GrantFiled: April 29, 2021Date of Patent: August 8, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Harry-Hak-Lay Chuang, Sheng-Huang Huang, Keng-Ming Kuo, Hung Cho Wang
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Publication number: 20230189657Abstract: Improved methods of patterning magnetic tunnel junctions (MTJs) for magnetoresistive random-access memory (MRAM) and semiconductor devices formed by the same are disclosed. In an embodiment, a method includes depositing a bottom electrode layer over a semiconductor substrate; depositing an MTJ film stack over the bottom electrode layer; depositing a top electrode layer over the MTJ film stack; patterning the top electrode layer; performing a first etch process to pattern the MTJ film stack; performing a first trim process on the MTJ film stack; after performing the first trim process, depositing a first spacer layer over the MTJ film stack; and after depositing the first spacer layer, performing a second etch process to pattern the first spacer layer, the MTJ film stack, and the bottom electrode layer to form an MRAM cell.Type: ApplicationFiled: April 20, 2022Publication date: June 15, 2023Inventors: Harry-HakLay Chuang, Hung Cho Wang, Sheng-Huang Huang, Hung-Yu Chang, Keng-Ming Kuo
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Publication number: 20210249471Abstract: The present disclosure provides a semiconductor structure, including a memory region, a logic region adjacent to the memory region, a first magnetic tunneling junction (MTJ) cell and a second MTJ cell over the memory region, and a carbon-based layer over the memory region, wherein the carbon-based layer includes a recess between the first MTJ cell and the second MTJ cell.Type: ApplicationFiled: April 29, 2021Publication date: August 12, 2021Inventors: HARRY-HAK-LAY CHUANG, SHENG-HUANG HUANG, KENG-MING KUO, HUNG CHO WANG
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Patent number: 10998377Abstract: The present disclosure provides a semiconductor structure, including a memory region, a first metal line in the memory region, a magnetic tunneling junction (MTJ) cell over the first metal line, a carbon-based layer between the first metal line and the MTJ cell, a second metal line over the MTJ cell, a logic region adjacent to the memory region, wherein the logic region is free from a coverage of the carbon-based layer.Type: GrantFiled: May 27, 2020Date of Patent: May 4, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Harry-Hak-Lay Chuang, Sheng-Huang Huang, Keng-Ming Kuo, Hung Cho Wang
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Publication number: 20200286952Abstract: The present disclosure provides a semiconductor structure, including a memory region, a first metal line in the memory region, a magnetic tunneling junction (MTJ) cell over the first metal line, a carbon-based layer between the first metal line and the MTJ cell, a second metal line over the MTJ cell, a logic region adjacent to the memory region, wherein the logic region is free from a coverage of the carbon-based layer.Type: ApplicationFiled: May 27, 2020Publication date: September 10, 2020Inventors: HARRY-HAK-LAY CHUANG, SHENG-HUANG HUANG, KENG-MING KUO, HUNG CHO WANG
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Patent number: 10727272Abstract: The present disclosure provides a semiconductor structure, including a logic region and a memory region. The memory region includes a first Nth metal line of an Nth metal layer, a magnetic tunneling junction (MTJ) over first Nth metal line, a carbon-based layer between the first Nth metal line and the MTJ, and a first (N+M)th metal via of an (N+M)th metal layer. A method of manufacturing the semiconductor structure is also disclosed.Type: GrantFiled: April 25, 2018Date of Patent: July 28, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Harry-Hak-Lay Chuang, Sheng-Huang Huang, Keng-Ming Kuo, Hung Cho Wang
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Publication number: 20190165041Abstract: The present disclosure provides a semiconductor structure, including a logic region and a memory region. The memory region includes a first Nth metal line of an Nth metal layer, a magnetic tunneling junction (MTJ) over first Nth metal line, a carbon-based layer between the first Nth metal line and the MTJ, and a first (N+M)th metal via of an (N+M)th metal layer. A method of manufacturing the semiconductor structure is also disclosed.Type: ApplicationFiled: April 25, 2018Publication date: May 30, 2019Inventors: HARRY-HAK-LAY CHUANG, SHENG-HUANG HUANG, KENG-MING KUO, HUNG CHO WANG
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Patent number: 9810748Abstract: A tunneling magneto-resistor (TMR) device for sensing a magnetic field includes a first TMR sensor having a first MTJ (magnetic tunneling junction) device and a second MTJ device connected in parallel. Each of the first and second MTJ devices has a pinned layer and a free layer. The pinned layer of each of the first and second MTJ devices has a pinned magnetization at a first pinned direction. The free layers of the first and second MTJ devices have a first free magnetization parallel to and a second free magnetization anti-parallel to a first easy-axis respectively.Type: GrantFiled: December 11, 2015Date of Patent: November 7, 2017Assignee: Industrial Technology Research InstituteInventors: Keng-Ming Kuo, Ding-Yeong Wang
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Publication number: 20160291097Abstract: A tunneling magneto-resistor (TMR) device for sensing a magnetic field includes a first TMR sensor having a first MTJ (magnetic tunneling junction) device and a second MTJ device connected in parallel. Each of the first and second MTJ devices has a pinned layer and a free layer. The pinned layer of each of the first and second MTJ devices has a pinned magnetization at a first pinned direction. The free layers of the first and second MTJ devices have a first free magnetization parallel to and a second free magnetization anti-parallel to a first easy-axis respectively.Type: ApplicationFiled: December 11, 2015Publication date: October 6, 2016Inventors: Keng-Ming Kuo, Ding-Yeong Wang
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Patent number: 9207290Abstract: A magnetic field sensor for sensing an external magnetic field is disclosed. The magnetic field sensor includes at least two magnetic tunneling junction (MTJ) elements disposed on an underlying electrode. Each of the MTJ elements is formed by a synthetic antiferromagnetic layer, a barrier layer and a free layer sequentially stacked together. A top electrode is then connected to the free layers. The free layer can be a single free layer, a composite free layer, a synthetic antiferromagnetic free layer or an alloy free layer. When a current is applied to a metal circuit passing over or below the MTJ elements, free magnetic moments generated by the MTJ elements are anti-parallel to each other along a reference axis, and the angles between the magnetic moments created by the MTJ elements and the reference axis are 40 to 50 degrees and 130 to 140 degrees, respectively.Type: GrantFiled: December 28, 2012Date of Patent: December 8, 2015Assignee: Industrial Technology Research InstituteInventors: Keng-Ming Kuo, Ding-Yeong Wang, Yung-Hung Wang
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Patent number: 9069033Abstract: A 3-axis magnetic field sensor on a substrate and including, a first tunneling magneto-resistor (TMR) having a first easy-axis for sensing a X-axis magnetic field, a second TMR having a second easy-axis for sensing a Y-axis magnetic field, an out-of-plane magnetic sensor for sensing a Z-axis magnetic field, and a reference unit is provided. The first easy-axis and the second easy-axis are orthogonal and include an angle of 45±5 degrees with a bisection direction, respectively. The out-of-plane magnetic sensor includes a groove or bulge structure having a first incline and a second incline; a third TMR on the first incline having a third easy-axis; a fourth TMR on the second incline having a fourth easy-axis; and a central axis orthogonal to the bisection direction and parallel to the third easy-axis and the fourth easy-axis. The reference unit has a fifth TMR and a fifth easy-axis parallel to the bisection direction.Type: GrantFiled: June 2, 2013Date of Patent: June 30, 2015Assignee: Industrial Technology Research InstituteInventors: Young-Shying Chen, Keng-Ming Kuo, Ding-Yeong Wang, Cheng-Wei Chien
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Patent number: 8957487Abstract: A tunneling magneto-resistor reference unit for sensing a magnetic field includes a first MTJ (magnetic tunneling junction) device and a second MTJ device connected in parallel. The first MTJ device has a first pinned layer having a first pinned magnetization at a pinned direction, and a first free layer having a first free magnetization parallel to the pinned direction in a zero magnetic field. The second MTJ device has a second pinned layer having a second pinned magnetization at the pinned direction, and a second free layer having a second free magnetization anti-parallel to the pinned direction in a zero magnetic field. Major axes of the first and second MTJ devices have an angle of 45 degrees to a direction of an external magnetic field when sensed.Type: GrantFiled: August 31, 2012Date of Patent: February 17, 2015Assignee: Industrial Technology Research InstituteInventors: Yung-Hung Wang, Sheng-Huang Huang, Kuei-Hung Shen, Keng-Ming Kuo
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Publication number: 20140292312Abstract: A 3-axis magnetic field sensor on a substrate and including, a first tunneling magneto-resistor (TMR) having a first easy-axis for sensing a X-axis magnetic field, a second TMR having a second easy-axis for sensing a Y-axis magnetic field, an out-of-plane magnetic sensor for sensing a Z-axis magnetic field, and a reference unit is provided. The first easy-axis and the second easy-axis are orthogonal and include an angle of 45±5 degrees with a bisection direction, respectively. The out-of-plane magnetic sensor includes a groove or bulge structure having a first incline and a second incline; a third TMR on the first incline having a third easy-axis; a fourth TMR on the second incline having a fourth easy-axis; and a central axis orthogonal to the bisection direction and parallel to the third easy-axis and the fourth easy-axis. The reference unit has a fifth TMR and a fifth easy-axis parallel to the bisection direction.Type: ApplicationFiled: June 2, 2013Publication date: October 2, 2014Inventors: Young-Shying Chen, Keng-Ming Kuo, Ding-Yeong Wang, Cheng-Wei Chien
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Patent number: 8816683Abstract: Magnetic field sensing method and apparatus of this disclosure uses two tunneling magneto-resistor (TMR) devices. Angles of the free magnetizations of the two TMR devices with respect to a fixed direction are set in a first to fourth period. In the first to fourth period, the two TMR devices act as a TMR sensing unit and a zero-field reference unit by turns, and each of the conductance difference between the sensing unit and the zero field reference unit is also obtained in each of the first to fourth period. Finally, the four conductance differences are summed up.Type: GrantFiled: July 13, 2012Date of Patent: August 26, 2014Assignee: Industrial Technology Research InstituteInventors: Ding-Yeong Wang, Young-Shying Chen, Keng-Ming Kuo
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Publication number: 20140111195Abstract: A magnetic field sensor for sensing an external magnetic field is disclosed. The magnetic field sensor includes at least two magnetic tunneling junction (MTJ) elements disposed on an underlying electrode. Each of the MTJ elements is formed by a synthetic antiferromagnetic layer, a barrier layer and a free layer sequentially stacked together. A top electrode is then connected to the free layers. The free layer can be a single free layer, a composite free layer, a synthetic antiferromagnetic free layer or an alloy free layer. When a current is applied to a metal circuit passing over or below the MTJ elements, free magnetic moments generated by the MTJ elements are anti-parallel to each other along a reference axis, and the angles between the magnetic moments created by the MTJ elements and the reference axis are 40 to 50 degrees and 130 to 140 degrees, respectively.Type: ApplicationFiled: December 28, 2012Publication date: April 24, 2014Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Keng-Ming KUO, Ding-Yeong WANG, Yung-Hung WANG
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Publication number: 20130229175Abstract: Magnetic field sensing method and apparatus of this disclosure uses two tunneling magneto-resistor (TMR) devices. Angles of the free magnetizations of the two TMR devices with respect to a fixed direction are set in a first to fourth period. In the first to fourth period, the two TMR devices act as a TMR sensing unit and a zero-field reference unit by turns, and each of the conductance difference between the sensing unit and the zero field reference unit is also obtained in each of the first to fourth period. Finally, the four conductance differences are summed up.Type: ApplicationFiled: July 13, 2012Publication date: September 5, 2013Inventors: Ding-Yeong Wang, Young-Shying Chen, Keng-Ming Kuo
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Publication number: 20130168788Abstract: A tunneling magneto-resistor reference unit for sensing a magnetic field includes a first MTJ (magnetic tunneling junction) device and a second MTJ device connected in parallel. The first MTJ device has a first pinned layer having a first pinned magnetization at a pinned direction, and a first free layer having a first free magnetization parallel to the pinned direction in a zero magnetic field. The second MTJ device has a second pinned layer having a second pinned magnetization at the pinned direction, and a second free layer having a second free magnetization anti-parallel to the pinned direction in a zero magnetic field. Major axes of the first and second MTJ devices have an angle of 45 degrees to a direction of an external magnetic field when sensed.Type: ApplicationFiled: August 31, 2012Publication date: July 4, 2013Inventors: Yung-Hung Wang, Sheng-Huang Huang, Kuei-Hung Shen, Keng-Ming Kuo