Abstract: A passive microfluidic valve includes a first manifold portion having a first chamber; a first inlet fluidly coupled to the first chamber; and a second inlet. The valve also includes a second manifold portion in fluid communication with the first chamber via a channel. The second manifold portion includes a second chamber fluidly coupled to the first chamber and the second inlet. The valve further includes a flexible membrane disposed between the first manifold portion and the second manifold portion and separating the first chamber and the second chamber, the flexible membrane configured to modulate a flow rate of a media flowing between the first inlet and the second inlet in either direction in response to pressure of the media flow.

Abstract: A method and system for sensing using a soft robotic system. The method and system uses displacement and/or deformation of elastomeric components, fibers, or liquids in the soil robotic system to change a visual state which is recordable in images by a digital camera. The displacement or deformation, or force applied to the soft robotic system is measured by analyzing the images using machine vision.

Abstract: A passive microfluidic valve includes a first manifold portion having a first chamber; a first inlet fluidly coupled to the first chamber; and a second inlet. The valve also includes a second manifold portion in fluid communication with the first chamber via a channel. The second manifold portion includes a second chamber fluidly coupled to the first chamber and the second inlet. The valve further includes a flexible membrane disposed between the first manifold portion and the second manifold portion and separating the first chamber and the second chamber, the flexible membrane configured to modulate a flow rate of a media flowing between the first inlet and the second inlet in either direction in response to pressure of the media flow.

Abstract: A high-voltage semiconductor device is provided. The device includes a semiconductor substrate including a high-voltage well region. The device further includes a gate dielectric structure and a gate. The gate dielectric structure includes a first dielectric layer over the high-voltage well region and a second dielectric layer over the first dielectric layer. The second dielectric layer has a U-shaped or ring-shaped contour as viewed from a top-view aspect, so as to form an opening exposing the first dielectric layer. The gate is disposed over the second dielectric layer and extends onto the exposed first dielectric layer via the opening. The device further includes a drift doping region in the high-voltage well region and a source/drain doping region in the drift doping region. A method for fabricating the high-voltage semiconductor device is also provided.

Abstract: A voltage compensation circuit and a control method thereof dynamically compensate a voltage drop caused by supplying power from a first power line to a function circuit. The voltage compensation circuit includes an amplifier, a detection module and a boosting module. The amplifier has an inverting input end coupled to the first power line and the function circuit to be supplied with a load voltage supplying to the function circuit, a non-inverting input end for being supplied with a reference voltage, and an output end coupled to the detection module to output a comparison signal. The boosting module is coupled between the detection module and the inverting input end of the amplifier. The detection module generates compensation voltage information according to the comparison signal. The boosting module outputs the compensation voltage to the inverting input end of the amplifier according to the compensation voltage information.

Abstract: A non-violate memory device and a control method thereof are provided. The non-violate memory device includes a flip-flop, a retention cell and a memory cell. The flip-flop includes an output inverter. The flip-flop generates a second data according to a first data and a retention signal. The retention cell is coupled to the output inverter of the flip-flop. The retention cell temporarily stores the second data when the retention signal is enabled. During the period that retention signal is enabled, the memory cell stores the second data temporarily stored by the retention cell. Thus, another operation mode of the non-violate memory device is provided to save more power.

Abstract: A non-violate memory device and a control method thereof are provided. The non-violate memory device includes a flip-flop, a retention cell and a memory cell. The flip-flop includes an output inverter. The flip-flop generates a second data according to a first data and a retention signal. The retention cell is coupled to the output inverter of the flip-flop. The retention cell temporarily stores the second data when the retention signal is enabled. During the period that retention signal is enabled, the memory cell stores the second data temporarily stored by the retention cell. Thus, another operation mode of the non-violate memory device is provided to save more power.

Abstract: A voltage compensation circuit and a control method thereof dynamically compensate a voltage drop caused by supplying power from a first power line to a function circuit. The voltage compensation circuit includes an amplifier, a detection module and a boosting module. The amplifier has an inverse input end coupled to the first power line and the function circuit to be supplied with a load voltage supplying to the function circuit, a non-inverse input end for being supplied with a reference voltage, and an output end coupled to the detection module to output a comparison signal. The boosting module is coupled between the detection module and the inverse input end of the amplifier. The detection module generates compensation voltage information according to the comparison signal. The boosting module outputs the compensation voltage to the inverse input end of the amplifier according to the compensation voltage information.

Abstract: Metallic stents which have a randomly oriented microstructure, and possess quasi-isotropic mechanical and physical properties are disclosed. The novel stents can be “tailor-made” to mimic the geometry of the blood vessel(s) at the deployment site and can be designed to treat coronary artery disease at the point where blood vessels branch. The metallic materials of choice are ductile, corrosion resistant and exhibit little crystallographic texture. The novel stents can be produced from a metallic precursor which is quasi-isotropic and exhibits little texture by processing means, such as machining, which do not reintroduce texture. Alternatively, quasi-isotropic and low texture stents are achieved by suitable post-processing of conventionally fabricated stent materials.

Abstract: A method, an apparatus, and a computer program product thereof for enabling an Internet extension to ring a conventional extension are disclosed. The apparatus comprises an SIP proxy and an RTP relay. The SIP proxy receives a calling request from the Internet extension, substitutes an exchange number for a conventional extension number comprised in the calling request, and transmits the substituted calling request to a gateway, so that the substituted calling request can be transmitted to a voice automatic machine via a telephone exchange. The RTP relay transmits the conventional extension number in DTMF format to the gateway. Thus, this invention enables the Internet extension to ring the conventional extension with lower hardware costs.

Abstract: A method, an apparatus, and a computer program product thereof for enabling an Internet extension to ring a conventional extension are disclosed. The apparatus comprises an SIP proxy and an RTP relay. The SIP proxy receives a calling request from the Internet extension, substitutes an exchange number for a conventional extension number comprised in the calling request, and transmits the substituted calling request to a gateway, so that the substituted calling request can be transmitted to a voice automatic machine via a telephone exchange. The RTP relay transmits the conventional extension number in DTMF format to the gateway. Thus, this invention enables the Internet extension to ring the conventional extension with lower hardware costs.

Abstract: A method is provided for improving the microstructure of nickel and iron-based precipitation strengthened superalloys used in high temperature applications by increasing the frequency of "special", low-.SIGMA. CSL grain boundaries to levels in excess of 50%. Processing entails applying specific thermomechanical processing sequences to precipitation hardenable alloys comprising a series of cold deformation and recrystallization-annealing steps performed within specific limits of deformation, temperature, and annealing time. Materials produced by this process exhibit significantly improved resistance to high temperature degradation (eg. creep, hot corrosion, etc.), enhanced weldability, and high cycle fatigue resistance.

Abstract: Lead and lead-alloy anodes for electrowinning metals such as zinc, copper, lead, tin, nickel and manganese from sulfuric acid solutions, whereby the electrodes are processed by a repetitive sequence of cold deformation and recrystallization heat treatment, within specified limits of deformation, temperature and annealing time, to achieve an improved microstructure consisting of a high frequency of special low .SIGMA. CSL grain boundaries (i.e.>50%). The resultant electrodes possess significantly improved resistance to intergranular corrosion, and yield (1) extended service life, (2) the potential for reduction in electrode thickness with a commensurate increase in the number of electrodes per electrowinning cell, and (3) the opportunity to extract higher purity metal product.