Abstract: A robot hand is a robot hand including a finger section. The robot hand includes an elastic body provided in the finger section and including an attracting section that attracts an object and a sensor provided in the finger section and configured to detect deformation of the elastic body.

Abstract: A robot hand includes a finger unit that is in contact with an object. The finger unit includes: a first member in which a tip portion and a base portion connected to the tip portion are formed as a single member; and a second member that covers a surface of the first member.

Abstract: A robot hand includes a finger unit that is in contact with an object. The finger unit includes: a first member in which a tip portion and a base portion connected to the tip portion are formed as a single member; and a second member that covers a surface of the first member.

Abstract: A photovoltaic device that exhibits increased open-circuit voltage and an improved fill factor due to an improvement in the contact properties between the n-layer and a back-side transparent electrode layer or intermediate contact layer, and a process for producing the photovoltaic device. The photovoltaic device comprises a photovoltaic layer having a p-layer, an i-layer and an n-layer stacked on top of a substrate, wherein the n-layer comprises a nitrogen-containing n-layer and an interface treatment layer formed on the opposite surface of the nitrogen-containing n-layer to the substrate, the nitrogen-containing n-layer comprises nitrogen atoms at an atomic concentration of not less than 1% and not more than 20%, and has a crystallization ratio of not less than 0 but less than 3, and the interface treatment layer has a crystallization ratio of not less than 1 and not more than 6.

Abstract: A robot control method includes a first step of selecting a holding form in which a robot holds an object and a second step of determining whether the object can continue to be stably held when a predetermined external force is applied to the object in the selected holding form. In the second step, it is determined that the object can continue to be stably held when a force which should be generated by a contact portion to generate resistance to the predetermined external force is included in a friction cone of a force generated by driving the contact portion and enlarged by a suction force from the suction mechanism.

Abstract: A robot hand includes a finger unit that includes a first knuckle section that is supported to a predetermined base section and a second knuckle section that is supported to the first knuckle section; a drive section that includes a male screw that is rotatable around a predetermined screw axis by a predetermined drive source and a female screw that is screw-coupled with the male screw and moves in an axial direction of the screw axis according to rotation of the male screw, in which the female screw and the first knuckle section are connected to each other so that the first knuckle section moves in association with movement of the female screw; and a link section that connects the first knuckle section and the second knuckle section so that the second knuckle section moves in association with movement of the first knuckle section.

Abstract: A robot hand includes a finger unit that is in contact with an object. The finger unit includes: a first member in which a tip portion and a base portion connected to the tip portion are formed as a single member; and a second member that covers a surface of the first member.

Abstract: A recess has a proximal-end-side surface and a distal-end-side surface. When an intersection between a straight line included in the proximal-end-side surface and a straight line included in the distal-end-side surface is a base point, a line passing through the base point is a base line, a line between two claw portions, passing through an end point of the recess and orthogonal to the base line is an orthogonal line, the angle ? made between the base line, and the straight line included in the distal-end-side surface is greater than 0 degrees and less than 90 degrees, the angle ? made between the orthogonal line, and the straight line included in the proximal-end-side surface is greater than 0 degrees and less than 90 degrees, and the length d from the base point to the orthogonal line is greater than 0.

Abstract: Provided is a photoelectric conversion device in which the conductivity after hydrogen-plasma exposure is set within an appropriate range, thereby suppressing the leakage current and improving the conversion efficiency. A photoelectric conversion device includes, on a substrate, a photoelectric conversion layer having at least two power generation cell layers, and an intermediate contact layer provided between the power generation cell layers. The intermediate contact layer mainly contains a compound represented by Zn1-xMgxO (0.096?x?0.183).

Abstract: An object is to reduce the effect of a film thickness variation on the substrate surface of a thin film and improve the measuring accuracy. Provided are a light source that radiates single-wavelength light to an inspection-target substrate (W), which is formed by forming a thin film on a glass substrate from the glass substrate side; a light receiving element that is disposed such that the light receiving axis intersects with the optical axis of illumination light emitted from the light source at a predetermined inclination angle and that receives diffused transmitted light that has been transmitted through the inspection-target substrate W; and a computer (7) that obtains a haze ratio of the thin film on the basis of the intensity of the light received by the light receiving element.

Abstract: A thin-film inspection apparatus calculates a film thickness of a first transparent thin film and a second transparent thin film of an inspection-target substrate including the first and second transparent thin films and a transparent conductive film on a transparent glass substrate.

Abstract: A process for producing a high-performance photovoltaic device by depositing a high-quality crystalline silicon layer, and a deposition apparatus for depositing the high-quality crystalline silicon layer. A process for producing a photovoltaic device that comprises forming a crystalline silicon-based photovoltaic layer comprising an i-layer on a substrate using a plasma-enhanced CVD method, wherein formation of the i-layer comprises an initial layer deposition stage and a bulk i-layer deposition stage, and the initial layer deposition stage comprises depositing the initial layer using a silane-based gas flow rate during the initial layer deposition stage that is lower than the silane-based gas flow rate during the bulk i-layer deposition stage, with the deposition time for the initial layer deposition stage set to not less than 0.

Abstract: Provided is a photoelectric conversion device fabrication method that realizes both high productivity and high conversion efficiency by rapidly forming an n-layer having good coverage. The fabrication method for a photoelectric conversion device includes a step of forming a silicon photoelectric conversion layer on a substrate by a plasma CVD method. In the fabrication method for the photoelectric conversion device, the step of forming the photoelectric conversion layer includes a step of forming an i-layer formed of crystalline silicon and a step of forming, on the i-layer, an n-layer under a condition with a hydrogen dilution ratio of 0 to 10, inclusive.

Abstract: A recess has a proximal-end-side surface and a distal-end-side surface. When an intersection between a straight line included in the proximal-end-side surface and a straight line included in the distal-end-side surface is a base point, a line passing through the base point is a base line, a line between two claw portions, passing through an end point of the recess and orthogonal to the base line is an orthogonal line, the angle ? made between the base line, and the straight line included in the distal-end-side surface is greater than 0 degrees and less than 90 degrees, the angle ? made between the orthogonal line, and the straight line included in the proximal-end-side surface is greater than 0 degrees and less than 90 degrees, and the length d from the base point to the orthogonal line is greater than 0.

Abstract: A photovoltaic device in which leakage current is suppressed and the conversion efficiency is improved. A photovoltaic device (100) comprising a photovoltaic layer (3) comprising two electric power generation cell layers (91, 92) disposed on a substrate (1), and an intermediate contact layer (5) interposed between the two electric power generation cell layers (91, 92), wherein the intermediate contact layer (5) comprises Ga2O3-doped ZnO as the main component and also comprises nitrogen atoms, and the sheet resistance of the intermediate contact layer (5) following exposure to a hydrogen plasma is not less than 1 k?/square and not more than 100 k?/square.

Abstract: A process for producing a photovoltaic device having high photovoltaic conversion efficiency by suppressing light absorption in the visible light short wavelength region. The process for producing a photovoltaic device (100) comprises a step of forming a substrate-side transparent electrode layer (2) on a substrate (1), a step of forming an intermediate contact layer (5) between two adjacent cell layers (91, 92), and a step of forming a backside transparent electrode layer (6) on a photovoltaic layer (3), wherein a transparent conductive film comprising mainly Ga-doped ZnO is deposited as the substrate-side transparent electrode layer (2), the intermediate contact layer (5) or the backside transparent electrode layer (6), under conditions in which the N2 gas partial pressure is controlled so that the ratio of N2 gas partial pressure relative to inert gas partial pressure per unit thickness of the transparent conductive film is not more than a predetermined value.

Abstract: There are provided a thermal barrier coating material and a thermal barrier coating member that can suppress spalling when used at a high temperature and have a high thermal barrier effect, a method for producing the same, a turbine member coated with a thermal barrier coating, and a gas turbine. The thermal barrier coating member comprises a heat resistant substrate, a bond coat layer formed thereon, and a ceramic layer formed further thereon, wherein the ceramic layer comprises an oxide which consists of an oxide represented by the general formula A2Zr2O7 doped with a predetermined amount of CaO or MgO and has 10 volume % or more of a pyrochlore type crystal structure, where A represents any of La, Nd, Sm, Gd, and Dy.

Abstract: A thin-film inspection apparatus includes a storage section (14) that stores at least two feature-value characteristics in which at least two feature values selected from feature values in a spectral reflectance spectrum that are affected by a variation in the film thickness of at least one of a first transparent thin film and a second transparent thin film are each associated with the film thickness of the first transparent thin film and the film thickness of the second transparent thin film; a light irradiation section (11) that irradiates an inspection-target substrate (S) with white light through a transparent glass substrate; a light receiving section (12) that receives reflected light reflected from the inspection-target substrate (S); and an arithmetic section (15) that obtains measurement values of the feature values stored in the storage section (14) from a spectral reflectance spectrum generated based on the received reflected light and that calculates the film thickness of each of the first transpa

Abstract: A process for producing a high-performance photovoltaic device by depositing a high-quality crystalline silicon layer, and a deposition apparatus for depositing the high-quality crystalline silicon layer. A process for producing a photovoltaic device that comprises forming a crystalline silicon-based photovoltaic layer comprising an i-layer on a substrate using a plasma-enhanced CVD method, wherein formation of the i-layer comprises an initial layer deposition stage and a bulk i-layer deposition stage, and the initial layer deposition stage comprises depositing the initial layer using a silane-based gas flow rate during the initial layer deposition stage that is lower than the silane-based gas flow rate during the bulk i-layer deposition stage, with the deposition time for the initial layer deposition stage set to not less than 0.

Abstract: An object is to reduce the effect of a film thickness variation on the substrate surface of a thin film and improve the measuring accuracy. Provided are a light source that radiates single-wavelength light to an inspection-target substrate (W), which is formed by forming a thin film on a glass substrate from the glass substrate side; a light receiving element that is disposed such that the light receiving axis intersects with the optical axis of illumination light emitted from the light source at a predetermined inclination angle and that receives diffused transmitted light that has been transmitted through the inspection-target substrate W; and a computer (7) that obtains a haze ratio of the thin film on the basis of the intensity of the light received by the light receiving element.