Abstract: A frame structure includes: a plurality of side members which extend in the longitudinal direction of a vehicle and on which a cargo bed of the vehicle is to be mounted; a plurality of support members, each of which is provided outward from the plurality of side members in the width direction of the vehicle and extends in the longitudinal direction of the vehicle; and at least one or more cross members that are provided between the plurality of support members and extend through the plurality of side members in the width direction of the vehicle.

Abstract: A second cross member of the present invention has a cross member body that is formed in a cross-sectional crank shape and extends in the vehicle width direction, and left and right cross member gussets that are fixed to both left and right ends of the cross member body. The left and right cross member gussets are fixed to both ends parts in the vehicle width direction of a cross member upper plate part of the cross member body, and extend further toward the outside in the vehicle width direction than left and right ends of the cross member upper plate part. The distance L4 between both outside ends in the vehicle width direction of the left and right cross member gussets is greater toward both sides in the vehicle width direction than the length L2 in the vehicle width direction of the cross member body.

Abstract: Examples of an amplifier includes an input divider section having a first path and a second path for branching of an input signal, wherein a passing phase at the first path and a passing phase at the second path are different; a first amplifying element that amplifies a signal input to the first path; a second amplifying element that amplifies a signal input to the second path; an output synthesizing section that performs synthesis of an output of the first amplifying element and an output of the second amplifying element with a third path for transmitting the output of the first amplifying element and a fourth path for transmitting the output of the second amplifying element, wherein a passing phase at the third path and a passing phase at the fourth path are different; and an electromagnetic coupling section that establishes electromagnetic coupling of two signals.

Abstract: Reduction in impedance in a lead connected to a semiconductor element is achieved while achieving anchor effect. The semiconductor device includes a heatsink, a semiconductor element, a lead disposed on an upper side of the heatsink, and a molding material formed to cover the lead, the heatsink, and the semiconductor element. Formed on an edge portion of a lower surface in a position, in the heatsink, overlapping with the lead in a plan view is a first convex portion protruding more than an edge portion of an upper surface in the position, and formed on an edge portion of an upper surface in a position, in the heatsink, which does not overlap with the lead in a plan view is a second convex portion protruding more than an edge portion of a lower surface in the position.

Abstract: Examples of an amplifier includes an input divider section having a first path and a second path for branching of an input signal, wherein a passing phase at the first path and a passing phase at the second path are different; a first amplifying element that amplifies a signal input to the first path; a second amplifying element that amplifies a signal input to the second path; an output synthesizing section that performs synthesis of an output of the first amplifying element and an output of the second amplifying element with a third path for transmitting the output of the first amplifying element and a fourth path for transmitting the output of the second amplifying element, wherein a passing phase at the third path and a passing phase at the fourth path are different; and an electromagnetic coupling section that establishes electromagnetic coupling of two signals.

Abstract: Reduction in impedance in a lead connected to a semiconductor element is achieved while achieving anchor effect. The semiconductor device includes a heatsink, a semiconductor element, a lead disposed on an upper side of the heatsink, and a molding material formed to cover the lead, the heatsink, and the semiconductor element. Formed on an edge portion of a lower surface in a position, in the heatsink, overlapping with the lead in a plan view is a first convex portion protruding more than an edge portion of an upper surface in the position, and formed on an edge portion of an upper surface in a position, in the heatsink, which does not overlap with the lead in a plan view is a second convex portion protruding more than an edge portion of a lower surface in the position.

Abstract: A field effect transistor includes: a semiconductor substrate having a main surface; a plurality of source electrodes and a plurality of drain electrodes alternately disposed and ohmic-connected with the main surface of the semiconductor substrate; a plurality of gate electrodes Schottky-connected with the main surface of the semiconductor substrate and respectively disposed between the plurality of source electrodes and the plurality of drain electrodes; and a Schottky electrode Schottky-connected with the main surface of the semiconductor substrate, wherein each of the plurality of drain electrodes has first and second portions separated from each other, a sum of widths of the first and second portions of each drain electrode is smaller than a width of one source electrode, the Schottky electrode is disposed between the first portion and the second portion of the drain electrode.

Abstract: An amplifier includes a package, a transistor chip having a gate pad and a drain pad formed elongately, the transistor chip being provided in the package, and a plurality of drain bonding wires connected to the drain pad, wherein the plurality of drain bonding wires include a first outer-most bonding wire connected to one of two end portions of the drain pad, a second outer-most bonding wire connected to the other of the two end portions of the drain pad, and an intermediate bonding wire interposed between the first outer-most bonding wire and the second outer-most bonding wire, each of the plurality of drain bonding wires is longer than 1 mm, and the first outer-most bonding wire and the second outer-most bonding wire have loop heights larger than a loop height that the intermediate bonding wire has.

Abstract: An amplifier includes a package, a transistor chip having a gate pad and a drain pad formed elongately, the transistor chip being provided in the package, and a plurality of drain bonding wires connected to the drain pad, wherein the plurality of drain bonding wires include a first outer-most bonding wire connected to one of two end portions of the drain pad, a second outer-most bonding wire connected to the other of the two end portions of the drain pad, and an intermediate bonding wire interposed between the first outer-most bonding wire and the second outer-most bonding wire, each of the plurality of drain bonding wires is longer than 1 mm, and the first outer-most bonding wire and the second outer-most bonding wire have loop heights larger than a loop height that the intermediate bonding wire has.

Abstract: A field effect transistor includes: a semiconductor substrate having a main surface; a plurality of source electrodes and a plurality of drain electrodes alternately disposed and ohmic-connected with the main surface of the semiconductor substrate; a plurality of gate electrodes Schottky-connected with the main surface of the semiconductor substrate and respectively disposed between the plurality of source electrodes and the plurality of drain electrodes; and a Schottky electrode Schottky-connected with the main surface of the semiconductor substrate, wherein each of the plurality of drain electrodes has first and second portions separated from each other, a sum of widths of the first and second portions of each drain electrode is smaller than a width of one source electrode, the Schottky electrode is disposed between the first portion and the second portion of the drain electrode.

Abstract: A comparator 13 that detects the difference between a high frequency signal detected by a detector 12 and a feedback signal A output from a comparator 11; a comparator 14 that detects the difference between the difference detected by the comparator 13 and a feedback signal B output from an adder 18; and a loop filter 15 that passes only a prescribed low frequency band of the output signal of the comparator 14 are provided, in which an amplitude sensitivity adjuster 16 adjusts the amplitude sensitivity of a variable gain amplifier 3 in accordance with the rate of change of the signal passing through the loop filter 15, thereby controlling the gain of the variable gain amplifier 3.

Abstract: A semiconductor device includes a power amplifier for amplifying RF signals in multiple frequency bands, an output matching circuit connected to an output of the power amplifier, a first capacitor connected at a first end to an output of the output matching circuit, multiple output paths, a switch connected to a second end of the first capacitor and directing each of the RF signals to a respective one of the output paths in accordance with frequency band of the each of the RF signals, and multiple second capacitors. Each second capacitor is connected in series to a respective one of the output paths. The switch and either the first capacitor or the second capacitors, or both the first and second capacitors, are integrated as a single monolithic microwave integrated circuit.

Abstract: A plurality of source-grounded transistors (3) are connected in parallel with each other, and a plurality of gate-grounded transistors (4) are connected in parallel with each other. Sources (4s) of the plurality of gate-grounded transistors (4) are connected to drains (3d) of the plurality of source-grounded transistors (3) respectively. Ground pads (5) are connected to sources (3s) of the plurality of source-grounded transistors (3). A plurality of grounding capacitances (6) are connected between gates (4g) of the plurality of gate-grounded transistors (4) and the ground pads (5). The plurality of source-grounded transistors (3) and the plurality of grounding capacitances (6) are alternately arranged between the ground pads (5) and the plurality of gate-grounded transistors (4).

Abstract: A comparator 13 that detects the difference between a high frequency signal detected by a detector 12 and a feedback signal A output from a comparator 11; a comparator 14 that detects the difference between the difference detected by the comparator 13 and a feedback signal B output from an adder 18; and a loop filter 15 that passes only a prescribed low frequency band of the output signal of the comparator 14 are provided, in which an amplitude sensitivity adjuster 16 adjusts the amplitude sensitivity of a variable gain amplifier 3 in accordance with the rate of change of the signal passing through the loop filter 15, thereby controlling the gain of the variable gain amplifier 3.

Abstract: An analog feedback amplifier is capable of suppressing extraneous phase fluctuations and broadening a bandwidth by preventing effects of a group delay element by using an amplitude regulator 21 and a delay line 24.

Abstract: A semiconductor device includes a power amplifier for amplifying RF signals in multiple frequency bands, an output matching circuit connected to an output of the power amplifier, a first capacitor connected at a first end to an output of the output matching circuit, multiple output paths, a switch connected to a second end of the first capacitor and directing each of the RF signals to a respective one of the output paths in accordance with frequency band of the each of the RF signals, and multiple second capacitors. Each second capacitor is connected in series to a respective one of the output paths. The switch and either the first capacitor or the second capacitors, or both the first and second capacitors, are integrated as a single monolithic microwave integrated circuit.

Abstract: An amplifier circuit is configured in such a manner that the withstand voltage between the terminals of a FET 2 (withstand voltage B) is higher than the withstand voltage between the terminals of a FET 1 (withstand voltage A), and that the gate width of the FET 1 (Wg1) is narrower than the gate width of the FET 2 (Wg2). This makes it possible to increase the gain while maintaining high output power. The narrow gate width of the FET 1 (Wg1) connected to an input terminal 3 enables reducing the size of the cascode amplifier.

Abstract: An analog feedback amplifier is capable of suppressing extraneous phase fluctuations and broadening a bandwidth by preventing effects of a group delay element by using an amplitude regulator 21 and a delay line 24.

Abstract: A high-frequency amplifier module includes a driver-stage amplifier 3 that amplifies an RF signal input thereto from an RF input terminal 1, and a final-stage amplifier 5 that amplifies the signal amplified by the driver-stage amplifier 3 and outputs the signal after the amplification to an RF output terminal 7. The driver-stage amplifier 3 is fabricated on a silicon substrate 11, while the final-stage amplifier 5 is fabricated on a gallium arsenide substrate. This configuration downsizes the cost while maintaining a high-frequency characteristic comparable to that in the case where all components of an entire module are fabricated on a gallium arsenide substrate 71.

Abstract: A front-end amplifier has an impedance detector that detects an impedance seen looking into an antenna side from a power amplifier from a radio-frequency signal output from the power amplifier and a radio-frequency signal reflected from the antenna, in which a control circuit decides on whether the impedance detected by the impedance detector belongs to a specific region or not, and controls, if the impedance belongs to the specific region, at least one of the bias condition of the power amplifier and the impedance of a variable-matching circuit.