Abstract: The present disclosure describes a detector used in critical dimension scanning electron microscopes (CD-SEM) and review SEM systems. In one embodiment, the detector includes a semiconductor structure having a p-n junction and a hole through which a scanning beam is passed to a target. The detector also includes a top electrode for the p-n junction (e.g., anode or cathode) that provides an active area for detecting electrons or electromagnetic radiation (e.g., backscattering from the target). The top electrode has a doped layer and can also have a buried portion beneath the doped layer to reduce a series resistance of the top electrode without changing the active area. In another embodiment, an isolation structure can be formed in the semiconductor structure near sidewalls of the hole to electrically isolate the active area from the sidewalls. A method for forming the buried portion of the top electrode is also described.

Abstract: A method for manufacturing a device including an active layer and a support substrate bonded to the active layer on one surface side, the active layer including an element, an electrode configured to drive the element, a frame portion disposed around the element, and an electrode pad disposed in the frame portion and coupled to the electrode, the method including: forming a protective film at the other surface side of the frame portion and the other surface side of the element, the protective film being resistant to an etchant and including a first opening portion formed between an outer shape of the element and the frame portion and a second opening portion formed on the electrode pad; and forming a space between the element and the support substrate by etching the support substrate with the etchant passing through the first opening portion.

Abstract: An information analysis apparatus according to an embodiment includes an input unit that inputs information indicating an apparatus that is a fault occurrence location in a communication network and a factor of a fault, a storage unit that stores a restoration handling method rule in which the apparatus that is the fault occurrence location, the factor of the fault, and an appropriate restoration handling method for the fault are associated, and an analyzer that analyzes an appropriate restoration handling method for the apparatus and the factor indicated by the information that is input, based on information related to a past fault for the apparatus that is the fault occurrence location, or a condition inherent in the apparatus that is the fault occurrence location, from the restoration handling method rule.

Abstract: A detector may be provided for a charged particle apparatus comprising: a sensing element including a diode; and a circuit configured to detect an electron event caused by an electron impacting the sensing element, wherein the circuit comprises a voltage monitoring device and a reset device, wherein the reset device is configured to regularly reset the diode by setting a voltage across the diode to a predetermined value, and wherein the voltage monitoring device is connected to the diode to monitor a voltage across the diode in between resets.

Abstract: Apparatus and methods for directing a beam of primary electrons along a primary beam path onto a sample are disclosed. In one arrangement, a beam separator diverts away from the primary beam path a beam of secondary electrons emitted from the sample along the primary beam path. A dispersion device is upbeam from the beam separator. The dispersion device compensates for dispersion induced in the primary beam by the beam separator. One or more common power supplies drive both the beam separator and the dispersion device.

Abstract: The present disclosure describes a detector used in critical dimension scanning electron microscopes (CD-SEM) and review SEM systems. In one embodiment, the detector includes a semiconductor structure having a p-n junction and a hole through which a scanning beam is passed to a target. The detector also includes a top electrode for the p-n junction (e.g., anode or cathode) that provides an active area for detecting electrons or electromagnetic radiation (e.g., backscattering from the target). The top electrode has a doped layer and can also have a buried portion beneath the doped layer to reduce a series resistance of the top electrode without changing the active area. In another embodiment, an isolation structure can be formed in the semiconductor structure near sidewalls of the hole to electrically isolate the active area from the sidewalls. A method for forming the buried portion of the top electrode is also described.

Abstract: A resistance welding control system includes a pair of electrodes, a driving mechanism, and a control device. The control device includes a detector, a determining unit, and a stop controller. The detector is configured to detect a position of a first electrode of the pair of electrodes and a distance from the first electrode to a second electrode of the pair of electrodes in the approaching-separating direction while electricity is being passed between the first and second electrodes. The determining unit is configured to make a determination as to whether predetermined variation has occurred in the position or the distance. The predetermined variation indicates that a temperature of the member to be welded is at a feature point temperature. The stop controller is configured to stop the electricity passed between the first and second electrodes on the basis of a result of the determination.

Abstract: Systems and methods of observing a sample using a charged-particle beam apparatus in voltage contrast mode are disclosed. The charged-particle beam apparatus comprises a charged-particle source, an optical source, a charged-particle detector configured to detect charged particles, and a controller having circuitry configured to apply a first signal to cause the optical source to generate the optical pulse, apply a second signal to the charged-particle detector to detect the second plurality of charged particles, and adjust a time delay between the first and the second signals. In some embodiments, the controller having circuitry may be further configured to acquire a plurality of images of a structure, to determine an electrical characteristic of the structure based on the rate of gray level variation of the plurality of images of the structure, and to simulate, using a model, a physical characteristic of the structure based on the determined electrical characteristic.

Abstract: A detector may be provided with an array of sensing elements. The detector may include a semiconductor substrate including the array, and a circuit configured to count a number of charged particles incident on the detector. The circuit of the detector may be configured to process outputs from the plurality of sensing elements and increment a counter in response to a charged particle arrival event on a sensing element of the array. Various counting modes may be used. Counting may be based on energy ranges. Numbers of charged particles may be counted at a certain energy range and an overflow flag may be set when overflow is encountered in a sensing element. The circuit may be configured to determine a time stamp of respective charged particle arrival events occurring at each sensing element. Size of the sensing element may be determined based on criteria for enabling charged particle counting.

Abstract: A detector may be provided with an array of sensing elements. The detector may include a semiconductor substrate including the array, and a circuit configured to count a number of charged particles incident on the detector. The circuit of the detector may be configured to process outputs from the plurality of sensing elements and increment a counter in response to a charged particle arrival event on a sensing element of the array. Various counting modes may be used. Counting may be based on energy ranges. Numbers of charged particles may be counted at a certain energy range and an overflow flag may be set when overflow is encountered in a sensing element. The circuit may be configured to determine a time stamp of respective charged particle arrival events occurring at each sensing element. Size of the sensing element may be determined based on criteria for enabling charged particle counting.

Abstract: A photocurable material formulation for a lost model that has a high elastic modulus, shows small thermal expansion, has heat resistance in a certain temperature region, and is free of a photoacid generator to be used in an epoxy material or the like. The formulation is a photocurable composition including curable materials formed of monofunctional (meth)acrylates each having a molecular weight of 150 or more and less than 350, and a bifunctional (meth)acrylate having a molecular weight of 200 or more and less than 400.

Abstract: To propose an information processing device and an information processing method to correct positions of audio objects during viewpoint switching. Provided is the information processing device which includes a content file generating unit that stores viewpoint switching information, which is to be used in correcting the positions of audio objects during viewpoint switching among a plurality of viewpoints, in the header of a content file and generates the content file.

Abstract: A resistance welding control system includes an electrode displacement detector, a temperature estimation information acquiring unit, and a temperature estimation unit. The electrode displacement detector detects a positional displacement between opposite electrodes while the electrodes are supplying electricity between the electrodes to perform resistance welding of welding members held between the electrodes. At least one of the electrodes is movable toward or apart from the other electrode. The temperature estimation information acquiring unit acquires at least an interelectrode voltage, a current density in the welding members, and a physical property value of the welding members as temperature estimation information to be used to estimate a temperature of a welding portion between the welding members.

Abstract: [Problem] To provide an image processing device, an image processing method, and a program. [Solution] An information processing device that includes a metadata file generating unit that generates a metadata file including viewpoint switch information to perform a position correction of an audio object at a viewpoint switch among plural viewpoints.

Abstract: [Problem] To propose an information processing device, an information processing method, and a program. [Solution] An information processing device includes a content file generating unit that stores viewpoint switching information, which is to be used in correcting the positions of audio objects during viewpoint switching among a plurality of viewpoints, in the header of a content file; and generates the content file.

Abstract: The present disclosure relates to a decoding device, a decoding method, an encoding device, and an encoding method, which are capable of enabling a decoding side to accurately recognize a color gamut of an encoding target image. The decoding device includes circuitry configured to receive an encoded stream including encoded data of an image and color primary information indicating a coordinate of at least one color primary of the image. The circuitry extracts the encoded data and the color primary information from the received encoded stream. The circuitry decodes the encoded data to generate the image. Further, the circuitry adjusts a color space of the generated image based on the extracted color primary information. The present disclosure can be applied to, for example, a decoding device of a high efficiency video coding (HEVC) scheme.

Abstract: A resistance welding control system includes a pair of electrodes, a driving mechanism, and a control device. The control device includes a detector, a determining unit, and a stop controller. The detector is configured to detect a position of a first electrode of the pair of electrodes and a distance from the first electrode to a second electrode of the pair of electrodes in the approaching-separating direction while electricity is being passed between the first and second electrodes. The determining unit is configured to make a determination as to whether predetermined variation has occurred in the position or the distance. The predetermined variation indicates that a temperature of the member to be welded is at a feature point temperature. The stop controller is configured to stop the electricity passed between the first and second electrodes on the basis of a result of the determination.

Abstract: The present disclosure relates to a decoding device, a decoding method, an encoding device, and an encoding method, which are capable of enabling a decoding side to accurately recognize a color gamut of an encoding target image. The decoding device includes circuitry configured to receive an encoded stream including encoded data of an image and color primary information indicating a coordinate of at least one color primary of the image. The circuitry extracts the encoded data and the color primary information from the received encoded stream. The circuitry decodes the encoded data to generate the image. Further, the circuitry adjusts a color space of the generated image based on the extracted color primary information. The present disclosure can be applied to, for example, a decoding device of a high efficiency video coding (HEVC) scheme.

Abstract: The present disclosure describes a detector used in critical dimension scanning electron microscopes (CD-SEM) and review SEM systems. In one embodiment, the detector includes a semiconductor structure having a p-n junction and a hole through which a scanning beam is passed to a target. The detector also includes a top electrode for the p-n junction (e.g., anode or cathode) that provides an active area for detecting electrons or electromagnetic radiation (e.g., backscattering from the target). The top electrode has a doped layer and can also have a buried portion beneath the doped layer to reduce a series resistance of the top electrode without changing the active area. In another embodiment, an isolation structure can be formed in the semiconductor structure near sidewalls of the hole to electrically isolate the active area from the sidewalls. A method for forming the buried portion of the top electrode is also described.

Abstract: To resolve or at least reduce trouble related to mismatch between a dynamic range of an HDR video signal and peak luminance of a display. Provided is an image processing apparatus including: a transformation unit configured to transform image signals based on a signal scheme of fixedly handling a display luminance level of reference white into display signals by executing gamma transformation so that the display luminance level of the reference white is maintained using a parameter decided on a basis of a peak luminance level of a display.