Abstract: A receiving circuit according to the present disclosure includes a reference signal generation unit configured to generate a high-frequency reference signal, and transmit the reference signal to a transmitting circuit side through a signal transmission path configured to trap and transmit a radio wave in the transmission path, and a transmission data restoration unit configured to receive the reference signal modulated based on transmission data on the transmitting circuit side and returned through the signal transmission path, and restore the transmission data.

Abstract: In order to prevent the ingress of moisture into a void section of a component main body of a ceramic electronic component, at least the component main body of the ceramic electronic component is provided with water repellency using a water repellent agent. The water repellent agent is dissolved in a supercritical fluid such as, a supercritical CO2 fluid, as a solvent to provide at least the component main body with water repellency. After providing the water repellency, the water repellent agent on the outer surface of the component main body is removed. As the water repellent agent, a silane coupling agent may be used.

Abstract: A multilayer ceramic electronic component including thin external terminal electrodes each having a superior bonding force to a ceramic base body is provided. In order to form the external terminal electrodes, after Cu plating films are deposited on exposed portions of internal electrodes by direct plating on a ceramic base body, a Cu liquid phase, an O2-containing liquid phase, and a Cu solid phase are generated between the Cu plating film and the ceramic base body by a heat treatment, so that Cu oxides are dispersed in the Cu plating film, at least near an interface with the ceramic base body. Since the Cu oxides function as an adhesive, a bonding force of the Cu plating film to the ceramic base body can be increased, and hence the external terminal electrode having a superior bonding force to the ceramic base body can be obtained.

Abstract: An electronic part that includes an electronic part main body and an external electrode on the surface of the electronic part main body. The external electrode includes at least one alloy layer selected from among a Cu—Ni alloy layer and a Cu—Mn alloy layer, and a Sn-containing layer on the outer side of the alloy layer. The Sn-containing layer is the outermost layer of the external electrode. The Sn-containing layer is in contact with the alloy layer.

Abstract: The device includes: a signal generating unit generating a millimeter wave signal by signal processing of an input signal; a coupling circuit transmitting an electromagnetic wave from the millimeter wave signal generated by the signal generating unit to one end of a circuit board; a coupling circuit receiving the electromagnetic wave from the millimeter wave signal from the other end of the circuit board; and a signal generating unit that generates an output signal by signal processing of the millimeter wave signal from the electromagnetic wave received by the coupling circuit. Preferably, the circuit board is constituted by a dielectric material whose the dielectric loss tangent is relatively large, and a transmission line functioning as a millimeter wave transmission path is constituted within this circuit board. With this construction, extremely high-speed signals can be transmitted through a circuit board having a prescribed dielectric constant representing a large loss.

Abstract: An electronic part that includes an electronic part main body and an external electrode on the surface of the electronic part main body. The external electrode includes at least one alloy layer selected from among a Cu—Ni alloy layer and a Cu—Mn alloy layer, and a Sn-containing layer on the outer side of the alloy layer. The Sn-containing layer is the outermost layer of the external electrode. The Sn-containing layer is in contact with the alloy layer.

Abstract: A wireless transmission system includes: a communication unit for transmission; and a communication unit for reception. The communication units for transmission and reception are housed in a housing of the same electronic apparatus, or the communication unit for transmission is housed in a housing of first electronic apparatus and the communication unit for reception is housed in a housing of second electronic apparatus and a wireless signal transmission path enabling wireless information transmission between the communication units is formed between the communication units when the first and the second electronic apparatus are disposed at given positions to be integrated with each other. The communication unit for transmission includes a first carrier signal generating unit and a first frequency converter, and the communication unit for reception includes a second carrier signal generating unit, and a second frequency converter.

Abstract: A semiconductor device includes: a power supply; a circuit block that has at least one storage element and operates by receiving a power supply voltage from the power supply; a power management unit that controls the power supply to change the power supply voltage; and a storage element monitor circuit that generates a first malfunction signal at a first margin voltage that is higher than a voltage at which the storage element does not normally operate in a case where the power supply voltage lowers, wherein the power management unit controls the power supply so that the power supply voltage does not become lower than the first margin voltage.

Abstract: A digital data signal, such as a digital video signal, is intentionally pre-distorted before being sent over a network. In one embodiment, this pre-distortion may be performed in accordance with a pre-distortion pattern or algorithm which is shared with only intended receivers. The pre-distortion pattern may be used to vary the pre-distortion on a periodic basis, as frequently as on a symbol-by-symbol basis. The pre-distortion function may include distorting the phase and/or the amplitude of the digital signal's modulation.

Abstract: A signal transmission apparatus includes: a transmission section adapted to transmit a transmission object signal as a radio wave; a reception section adapted to receive the radio wave transmitted from the transmission section and output an electric signal corresponding to the received radio wave; and a connection section adapted to connect a first housing and a second housing of an electronic instrument pivotably around a center axis; the connection section having a radio signal transmission line formed therein by which wireless transmission can be carried out between the transmission section and the reception section.

Abstract: A wireless transmission system includes: a communication unit for transmission; and a communication unit for reception. The communication units for transmission and reception are housed in a housing of the same electronic apparatus, or the communication unit for transmission is housed in a housing of first electronic apparatus and the communication unit for reception is housed in a housing of second electronic apparatus and a wireless signal transmission path enabling wireless information transmission between the communication units is formed between the communication units when the first and the second electronic apparatus are disposed at given positions to be integrated with each other. The communication unit for transmission includes a first carrier signal generating unit and a first frequency converter, and the communication unit for reception includes a second carrier signal generating unit, and a second frequency converter.

Abstract: A semiconductor device includes: a plurality of circuit parts; a global power source; a plurality of power source supply circuits; and a plurality of local power source control circuits provided in correspondence to the plurality of circuit parts, wherein each of the plurality of power source supply circuits includes a plurality of discrete supply switches, each of the plurality of local power source control circuits includes: a voltage monitor circuit; a storage circuit storing an output target characteristic value of the voltage monitor circuit; a comparator configured to compare the output characteristic value of the voltage monitor circuit and the target characteristic value; and a switch control circuit configured to control the number of the plurality of turned-on discrete supply switches based on the comparison result of the comparator.

Abstract: A semiconductor device includes: a plurality of circuit parts; a global power source; a plurality of power source supply circuits; and a plurality of local power source control circuits provided in correspondence to the plurality of circuit parts, wherein each of the plurality of power source supply circuits includes a plurality of discrete supply switches, each of the plurality of local power source control circuits includes: a delay monitor circuit having a delay path whose amount of delay changes in accordance with a change in the voltage value of the local power source, and whose output logical value changes in accordance with the amount of delay of the delay path; and a switch control circuit configured to control the number of the plurality of discrete supply switches based on the output logical value of the delay monitor circuit.

Abstract: An electromagnetic coupler comprising: a transmitter configured to operate at a first central frequency, a first termination configured to connect to the transmitter and having a second resonant frequency, a receiver configured to operate at the first frequency, a second termination configured to connect to the receiver and having a third resonant frequency, wherein when the first and second terminations are bought into close proximity when engaged, the equivalent resonant frequency is substantially the first frequency, and wherein the second and/or third frequencies being substantially spectrally spaced from the first frequency.

Abstract: In a method of forming a plating layer for an external terminal electrode by applying, for example, copper plating to an end surface of a component main body with respective ends of internal electrodes exposed, and then applying a heat treatment at a temperature of about 1000° C. or more in order to improve the adhesion strength and moisture resistance of the external terminal electrode, the plating layer may be partially melted to decrease the bonding strength of the plating layer. In the step of applying a heat treatment at a temperature of about 1000° C. or more to a component main body with plating layers formed thereon, the average rate of temperature increase from room temperature to the temperature of about 1000° C. or more is set to about 100° C./minute or more. This average rate of temperature increase maintains a moderate eutectic state in the plating layer and ensures a sufficient bonding strength of the plating layer.

Abstract: A circuit including: an input stage that includes a first input unit into which input data is input and a pair of first output units and is driven by a first power-supply voltage; a pair of first gate elements that includes first transistors, and is driven by a clock that includes a second power-supply voltage that is lower than the first power-supply voltage; a first latch circuit that includes a pair of second input units, and is driven by the first power-supply voltage; a pair of second gate elements that includes second transistors, and is driven by an inverted clock of the clock; and a second latch circuit that includes a pair of third input units, and a third output unit that outputs one of a pair of pieces of data, and is driven by the first power-supply voltage.

Abstract: In a method of forming a plating layer for an external terminal electrode by applying, for example, copper plating to an end surface of a component main body with respective ends of internal electrodes exposed, and then applying a heat treatment at a temperature of about 1000° C. or more in order to improve the adhesion strength and moisture resistance of the external terminal electrode, the plating layer may be partially melted to decrease the bonding strength of the plating layer. In the step of applying a heat treatment at a temperature of about 1000° C. or more to a component main body with plating layers formed thereon, the average rate of temperature increase from room temperature to the temperature of about 1000° C. or more is set to about 100° C./minute or more. This average rate of temperature increase maintains a moderate eutectic state in the plating layer and ensures a sufficient bonding strength of the plating layer.

Abstract: A method for manufacturing a multilayer electronic component includes the steps of preparing a laminate including a plurality of laminated insulating layers and a plurality of internal electrodes disposed along interfaces between the insulating layers, edges of the internal electrodes being exposed at a predetermined surface of the laminate, and forming an external electrode on the predetermined surface to electrically connect exposed the edges of the internal electrodes. The step of forming an external electrode includes a plating step of forming a continuous plating film by depositing plating deposits on the edges of the internal electrodes exposed at the predetermined surface and by performing plating growth to be connected to each other, and a heat treatment step of performing a heat treatment at an oxygen partial pressure of about 5 ppm or less and at a temperature of about 600° C. or more.

Abstract: A semiconductor device includes: first-power-supply that supplies first-power-supply-voltage; second-power-supply that supplies second-power-supply-voltage that is equal to or higher than the first-power-supply-voltage; first-circuit-block that is supplied with the first-power-supply-voltage from the first-power-supply to operate; second-circuit-block that is supplied with the second-power-supply-voltage from the second-power-supply to operate; level-shifters that are supplied with the first-power-supply-voltage and the second-power-supply-voltage from the first-power-supply and the second-power-supply to operate and shift a signal for the first-power-supply-voltage to a signal for the second-power-supply-voltage and shift the signal for the second-power-supply-voltage to the signal for the first-power-supply-voltage; a power-management-unit that controls the first-power-supply to change the first-power-supply-voltage; and a level-shifter-monitor-circuit that generates first-malfunction-signal at a first-marg

Abstract: A semiconductor device includes: a power supply; a circuit block that has at least one storage element and operates by receiving a power supply voltage from the power supply; a power management unit that controls the power supply to change the power supply voltage; and a storage element monitor circuit that generates a first malfunction signal at a first margin voltage that is higher than a voltage at which the storage element does not normally operate in a case where the power supply voltage lowers, wherein the power management unit controls the power supply so that the power supply voltage does not become lower than the first margin voltage.