Abstract: An IC mounting method and its resulting structure, such as an IC card is provided. An IC card includes a metal plate formed with at least one hole, and an IC chip is located fixed in position in the hole with a filler material filling the gap between the hole and the IC chip. An interconnect pattern is provided on the plate with an electrically insulating film sandwiched therebetween, and the interconnect pattern is in electrical contact with a contact pad of the IC chip. Preferably, the surface of the IC chip on which the contact pad is provided is substantially flush with one surface of the plate. When an electrically insulating film is fixedly attached to a substrate having a hole, in which an IC chip is fixedly provided, by an adhesive agent, the material of the film is selected to be similar to the material of the adhesive agent.

Abstract: The gold wire used for the wire bonding of a semiconductor device comprises at least three kinds of elements selected from rare earth elements such as La, Ce and Pr: Be, Ca, Mg, Ag, Fe: and platinum group elements; and the balance of Au at high purity.

Abstract: A method for forming an interconnection pattern of Al on a structure, such as a semiconductor device, includes the step of introducing ions of a selected material, such as As, P, B and Ar, into a film of Al to be formed into an interconnection pattern prior to the step of heat treatment, thereby substantially preventing undesired results, such as hillocks, when the pattern is heat-treated.