Patents by Inventor Kenichi Nagamatsu

Kenichi Nagamatsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Power supplies
    Patent number: 10644580
    Abstract: A power supply circuit capable of generating a stable output voltage is provided. According to one embodiment, the power supply circuit includes a comparison unit that compares the divided voltage corresponding to the external output voltage with each of the first reference voltage and the second reference voltage to output the comparison result, a NAND circuit that controls whether or not to output the clock signal based on the comparison result by the comparison unit, and a booster circuit that boosts the external output voltage when the clock signal is supplied via the NAND circuit.
    Type: Grant
    Filed: June 6, 2019
    Date of Patent: May 5, 2020
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventor: Kenichi Nagamatsu
  • POWER SUPPLIES
    Publication number: 20190393766
    Abstract: A power supply circuit capable of generating a stable output voltage is provided. According to one embodiment, the power supply circuit includes a comparison unit that compares the divided voltage corresponding to the external output voltage with each of the first reference voltage and the second reference voltage to output the comparison result, a NAND circuit that controls whether or not to output the clock signal based on the comparison result by the comparison unit, and a booster circuit that boosts the external output voltage when the clock signal is supplied via the NAND circuit.
    Type: Application
    Filed: June 6, 2019
    Publication date: December 26, 2019
    Inventor: Kenichi NAGAMATSU
  • Nonvolatile semiconductor memory device
    Patent number: 8379452
    Abstract: A nonvolatile semiconductor memory device includes a memory cell array in which a plurality of nonvolatile memory cells are arrayed, and a program voltage generator that switches current supply amount based on the number of memory cells that are programmed at the same time, among the plurality of memory cells. The nonvolatile semiconductor memory device further includes a selection circuit that selects, among the plurality of memory cells, one or more memory cells that are programmed, to flow a current outputted by the program voltage generator.
    Type: Grant
    Filed: June 23, 2010
    Date of Patent: February 19, 2013
    Assignee: Renesas Electronics Corporation
    Inventors: Kenichi Nagamatsu, Yasuhiro Tonda
  • NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
    Publication number: 20110002173
    Abstract: A nonvolatile semiconductor memory device includes a memory cell array in which a plurality of nonvolatile memory cells are arrayed, and a program voltage generator that switches current supply amount based on the number of memory cells that are programmed at the same time, among the plurality of memory cells. The nonvolatile semiconductor memory device further includes a selection circuit that selects, among the plurality of memory cells, one or more memory cells that are programmed, to flow a current outputted by the program voltage generator.
    Type: Application
    Filed: June 23, 2010
    Publication date: January 6, 2011
    Inventors: Kenichi Nagamatsu, Yasuhiro Tonda