Abstract: A pressure sensor has a stem in which a pressure introduction hole into which a pressure medium is introduced and a diaphragm deformable according to the pressure of the pressure medium are formed, and a strain detecting element which is arranged on the diaphragm via an insulating film and being configured to output a detection signal according to the deformation of the diaphragm. The strain detecting element is configured to have a portion made of polysilicon. A low doping layer having a higher electrical resistivity than polysilicon and a higher crystallinity than the insulating film is arranged between the insulating film and the strain detecting element.

Abstract: A multilayer body comprising a sealing layer (A) comprising a thermoplastic resin, an oxygen absorption layer (B) comprising a thermoplastic resin and iron powder, and an oxygen barrier layer (D) having oxygen barrier properties, the layers being laminated in a described order, wherein at least one of the sealing layer (A) and the oxygen absorption layer (B) comprises an ionomer as the thermoplastic resin.

Abstract: A multilayer body comprising a sealing layer (A) comprising a thermoplastic resin, an oxygen absorption layer (B) comprising a thermoplastic resin and iron powder, and an oxygen barrier layer (D) having oxygen barrier properties, the layers being laminated in a described order, wherein at least one of the sealing layer (A) and the oxygen absorption layer (B) comprises an ionomer as the thermoplastic resin.

Abstract: A multilayer body comprising a sealing layer (A) comprising a thermoplastic resin, an oxygen absorption layer (B) comprising a thermoplastic resin and iron powder, an odor absorption layer (C) comprising a thermoplastic resin and an inorganic base, and an oxygen barrier layer (D) having oxygen barrier properties, the layers being laminated in a described order.

Abstract: The present invention provides an oxygen absorber composition containing a hydrocarbon resin; an iron particle having an average particle diameter of 1.0 ?m or more and 200 ?m or less and having a BET specific surface area of 10 m2/g or more; and an aldehyde absorber capable of absorbing at least aldehyde compound, wherein the iron particle contains iron.

Abstract: An oxygen-absorbing container includes a container body having a multilayer structure constituted by an innermost layer, an outermost layer and an intermediate layer therebetween, the container body having an opening part on an upper part thereof; and a sealing member bonded to an upper end surface of the opening part of the container body to seal an opening of the opening part. The innermost layer and the intermediate layer are bent outward at an upper end of the opening part and form a flat part and a surface of the flat part forms the upper end surface of the opening part. When the sealing member is unsealed, part of the innermost layer on the upper end surface of the opening part is configured to be peeled off so as to leave an unsealed mark.

Abstract: An oxygen-absorbing container includes a container body having a multilayer structure constituted by an innermost layer, an outermost layer and an intermediate layer therebetween, the container body having an opening part on an upper part thereof; and a sealing member bonded to an upper end surface of the opening part of the container body to seal an opening of the opening part. The innermost layer and the intermediate layer are bent outward at an upper end of the opening part and form a flat part and a surface of the flat part forms the upper end surface of the opening part. When the sealing member is unsealed, part of the innermost layer on the upper end surface of the opening part is configured to be peeled off so as to leave an unsealed mark.

Abstract: There are provided an oxygen absorbing resin composition, an oxygen absorbing multilayered body, and an oxygen absorbing hollow container that can absorb oxygen in an atmosphere even under a low-humidity atmosphere. The oxygen absorbing resin composition includes: (I) an oxygen absorbing agent consisting of a metal (a metal of (I)) obtained by subjecting an alloy comprising (A) at least one transition metal selected from the group consisting of manganese, iron, platinum, and copper group metals and (B) at least one metal selected from the group consisting of aluminum, zinc, tin, lead, magnesium, and silicon, to treatment with an acidic or alkaline aqueous solution to elute and remove at least a part of the component (B); and (II) a thermoplastic resin.

Abstract: There are provided an oxygen absorbing resin composition, an oxygen absorbing multilayered body, and an oxygen absorbing hollow container that can absorb oxygen in an atmosphere even under a low-humidity atmosphere. The oxygen absorbing resin composition includes: (I) an oxygen absorbing agent consisting of a metal (a metal of (I)) obtained by subjecting an alloy comprising (A) at least one transition metal selected from the group consisting of manganese, iron, platinum, and copper group metals and (B) at least one metal selected from the group consisting of aluminum, zinc, tin, lead, magnesium, and silicon, to treatment with an acidic or alkaline aqueous solution to elute and remove at least a part of the component (B); and (II) a thermoplastic resin.

Abstract: A method for stabilizing an SOI semiconductor device which comprises the steps of: providing an SOI semiconductor device constituted of an SOI substrate including a support substrate, a buried insulating film formed on the support substrate and a surface semiconductor layer formed on the buried insulating film, source/drain regions formed in the surface semiconductor layer and a gate electrode formed on the surface semiconductor layer between the source/drain regions with intervention of a gate insulating film; and applying an electric stress between the support substrate and one of the source/drain regions so that a back channel is formed in a side of the surface semiconductor layer to the buried insulating film, thereby to introduce a capturing potential at least near an interface between said one of the source/drain regions and the surface semiconductor layer in the buried insulating film side.