Abstract: A switch apparatus is provided, including: a main switch connected between first and second terminals, and electrically connecting or disconnecting the first and second terminals according to gate voltage applied to a gate terminal; a voltage output unit having a voltage divider including a first voltage-division resistance on the first terminal side and a second voltage-division resistance on the second terminal side, and outputting voltage corresponding to voltage of the first terminal and voltage of the second terminal if the main switch is caused to enter a connected state; a buffer outputting voltage following output voltage of the voltage output unit in a connected state of the main switch; and a switch control circuit supplying first voltage corresponding to output voltage of the buffer to the gate terminal, and supplying a second voltage corresponding to output voltage of the buffer to a bulk terminal of the main switch.

Abstract: In an assembly of a hollow poppet valve and a valve seat insert, the hollow poppet valve's head is integrally formed with a stem end, a hollow part is formed from the head to a stem, and coolant is filled into the hollow part along with an inert gas. The valve seat insert is formed of iron base sintered alloy and obtained by integrating two layers of a supporting material side layer and a valve contact face side layer. The hollow poppet valve is formed of a material having thermal conductivity of 5-45 (W/m·K) at 20-1000° C. The valve seat insert includes the supporting material side layer having thermal conductivity of 23-50 (W/m·K) at 20-300° C. and a valve contact face side layer having thermal conductivity of 10-22 (W/m·K) at 20-300° C. This enables a valve temperature decrease throughout an engine's entire RPM range compared with the prior art.

Abstract: A surface-coated cutting tool of the present invention includes: a cutting tool body; and a hard coating layer provided on a surface of the cutting tool body, in which the hard coating layer includes a complex nitride or carbonitride layer, which is expressed by a composition formula: (Ti1-xAlx)(CyN1-y), the average content ratio Xavg of Al and the average content ratio Yavg of C in the complex nitride or carbonitride layer satisfy 0.60?Xavg?0.95 and 0?Yavg?0.005, provided that each of Xavg and Yavg is in atomic ratio, the complex nitride or carbonitride layer includes crystal grains with a cubic structure, and in the crystal grains with the cubic structure, a composition of Ti and Al is periodically changed in a direction of the normal line to the surface of the cutting tool body.

Abstract: A semiconductor substrate includes a first region in which a plurality of pixels are disposed and a second region located inside the first region to be surrounded by the first region when viewed from a direction in which a principal surface and a principal surface oppose each other. A through-hole penetrating through the semiconductor substrate is formed in the second region of the semiconductor substrate. An electrode disposed on a side of the principal surface of the semiconductor substrate and electrically connected to the plurality of pixels and an electrode disposed on a side of a principal surface of a mount substrate are connected to each other via a bonding wire inserted through the through-hole.

Abstract: A light receiving region includes a plurality of light detecting sections 10. The light detecting sections 10 has a second contact electrode 4A. The second contact electrode 4A is arranged at a position overlapping a first contact electrode 3A, so as to contact the first contact electrode. Further, a resistive layer 4B is continued to the second contact electrode 4A.

Abstract: A photoelectric conversion element includes: a plurality of pixels that are formed on a common semiconductor substrate and each of which includes an avalanche photodiode; a first line that is formed on the semiconductor substrate, is electrically connected to two or more first pixels included in the plurality of pixels, and collectively extracts output currents from the two or more first pixels; and a second line that is formed on the semiconductor substrate, is electrically connected to two or more second pixels included in the plurality of pixels, and collectively extracts output currents from the two or more second pixels. A light receiving area of each first pixel is larger than a light receiving area of each second pixel.

Abstract: A vehicle-body structure of a vehicle includes a first frame forming a closed cross-section portion, a reinforcing member disposed in the closed cross-section portion and connected to the first frame, and another vehicle-body member connected to an outer surface of the first frame. A connection portion of the first frame and the reinforcing member includes a rigid joint portion where the first frame and the reinforcing member are joined, and a flexible joint portion where the first frame and the reinforcing member are joined, with a damper member being disposed therebetween. The other vehicle-body member is connected to the first frame in a manner such that at least a part of the other vehicle-body member overlaps the flexible joint portion in a thickness direction of the first frame, and has a high rigidity portion that enhances rigidity at the part that overlaps the flexible joint portion.

Abstract: A light receiving region includes a plurality of light detecting sections 10. The light detecting sections 10 has a second contact electrode 4A. The second contact electrode 4A is arranged at a position overlapping a first contact electrode 3A, so as to contact the first contact electrode. Further, a resistive layer 4B is continued to the second contact electrode 4A.

Abstract: A photodiode array 1 has a plurality of photodetector channels 10 which are farmed on an n-type substrate 2 having an n-type semiconductor layer 12, with a light to be detected being incident to the plurality of photodetector channels 10. The photodiode array 1 comprises: a p?-type semiconductor layer 13 formed on the n-type semiconductor layer 12 of the substrate 2; resistors 4 each of which is provided to each of the photodetector channels 10 and is connected to a signal conductor 3 at one end thereof; and an n-type separating part 20 formed between the plurality of photodetector channels 10. The p?-type semiconductor layer 13 fauns a pn junction at the interface between the substrate 2, and comprises a plurality of multiplication regions AM for avalanche multiplication of carriers produced by the incidence of the light to be detected so that each of the multiplication regions corresponds to each of the photodetector channels.

Abstract: In this surface-coated cutting tool, a hard coating layer includes at least a layer of a complex nitride or complex carbonitride expressed by a composition formula: (Cr1-xAlx)(CyN1-y) or a layer of a complex nitride or complex carbonitride expressed by a composition formula: (Ti1-?-?Al?Me?)(C?N1-?), crystal grains configuring the layer of a complex nitride or complex carbonitride having an NaCl type face-centered cubic structure are present, and predetermined average crystal grain misorientation and inclined angle frequency distribution are present in the crystal grains having an NaCl type face-centered cubic structure.

Abstract: In a hard coating layer that contains at least any of a layer of a complex nitride or a complex carbonitride (composition formula: (Ti1-xAlx)(CyN1-y)) of chemically-vapor-deposited Ti and Al, a layer of a complex nitride or a complex carbonitride (composition formula: (Ti1-?-?Al?Mr?)(C?Ni1-?)) of Ti, Al, and Me, and a layer of a complex nitride or a complex carbonitride (composition formula: (Cr1-pAlp)(CqN1-q) of Cr and Al in a surface-coated cutting tool, some crystal grains that form the layer of a complex nitride or a complex carbonitride have cubic structures, and a predetermined average crystal grain misorientation and inclined angle frequency distribution are present in the crystal grains that have cubic structures.

Abstract: The hard coating layer of the cutting tool includes a complex nitride or complex carbonitride layer expressed by the composition formula: (Ti1-xAlx)(CyN1-y). xavg and yavg satisfy 0.60?xavg?0.95 and 0?yavg?0.005. xavg is an average content ratio of Al in a total amount of Ti and Al, and yavg is an average content ratio of C in a total amount of C and N. Some crystal grains composing the complex nitride or complex carbonitride layer have a cubic structure. In crystal grains having the cubic structure, the average crystal grain misorientaion is 1 degree or more; or 2 degrees or more, based on analysis of the polished surface perpendicular to a surface of the layer. A peak exists in 1-2 degrees of the average crystal grain misorientation in the frequency distribution of the average crystal grain misorientation and the area ratio.

Abstract: A photodiode array has a plurality of photodetector channels formed on an n-type substrate having an n-type semiconductor layer, with a light to be detected being incident to the photodetector channels. The array comprises: a p?-type semiconductor layer on the n-type semiconductor layer of the substrate; resistors is provided to each of the photodetector channels and is connected to a signal conductor at one end thereof; and an n-type separating part between the plurality of photodetector channels. The p?-type semiconductor layer forms a pn junction at the interface between the substrate, and comprises a plurality of multiplication regions for avalanche multiplication of carriers produced by the incidence of the light to be detected so that each of the multiplication regions corresponds to each of the photodetector channels.

Abstract: There is provided an automotive vehicle which comprises a side door, impact bars provided at the side door, a side inner panel, a first reinforcing member provided to extend along a rear side of a peripheral portion of an entrance portion and joined to an outside of the side inner panel so as to form a first closed cross section together with the side inner panel, and second reinforcing members joined to an outside of the first reinforcing member so as to form second closed cross sections together with the first reinforcing member, the second reinforcing members being configured to overlap with the impact bars, in a side view, when the side door closes the entrance portion.

Abstract: A coated tool has a hard coating layer including a layer of a complex nitride or complex carbonitride expressed by (Ti1-xAlx)(CyN1-y). A periodic concentration variation is present in crystal grains of a complex nitride or complex carbonitride having a NaCl type face-centered cubic structure in the layer. The periodic concentration variation direction includes a direction at 30 degrees or less with respect to a surface of a tool body. An area percentage of a periodic concentration variation of Ti and Al is 40% or more. The concentration variation period is 1 to 10 nm. A difference between an average of local maximums and an average of local minimums of a periodically varying amount x of Al is 0.01 to 0.1. Fine crystal grains having a hexagonal structure with an average grain size of 0.01 to 0.3 ?m are present at grain boundaries in 5% or less of the area.

Abstract: Each semiconductor chip of a detector comprises a semiconductor substrate having a plurality of photodetector units, an insulating layer formed on a front face of the semiconductor substrate, a common electrode arranged on the insulating layer, a readout line for electrically connecting a quenching resistance of each photodetector unit and the common electrode to each other, and a through electrode extending from the common electrode to a rear face of the semiconductor substrate through a through hole of the semiconductor substrate.

Abstract: A switch apparatus is provided, including: a main switch connected between first and second terminals, and electrically connecting or disconnecting the first and second terminals according to gate voltage applied to a gate terminal; a voltage output unit having a voltage divider including a first voltage-division resistance on the first terminal side and a second voltage-division resistance on the second terminal side, and outputting voltage corresponding to voltage of the first terminal and voltage of the second terminal if the main switch is caused to enter a connected state; a buffer outputting voltage following output voltage of the voltage output unit in a connected state of the main switch; and a switch control circuit supplying first voltage corresponding to output voltage of the buffer to the gate terminal, and supplying a second voltage corresponding to output voltage of the buffer to a bulk terminal of the main switch.

Abstract: An aggregate of carbon nanotubes has an acid adsorption amount equal to or greater than 0.6 mass % and equal to or less than 12 mass %, which is obtained by subjecting a starting material composition containing carbon nanotubes to a two-stage wet oxidation treatment. A method of producing an aggregate of carbon nanotubes includes a primary oxidation treatment step, wherein a starting material composition containing carbon nanotubes is subjected to a wet oxidation treatment to give a primary treated aggregate of carbon nanotubes having a ratio (G/D ratio) of the height of G band to that of D band in Raman spectroscopic analysis at 532 nm wavelength equal to or greater than 30; and a secondary oxidation treatment step of performing a wet oxidation treatment under an oxidizing condition stronger than that of the primary oxidation treatment step.

Abstract: A coated tool includes a hard coating layer that is formed with a (Ti,Al)(C,N) layer on its surface, the layer including an upper layer where a periodic compositional variation in Ti and Al is present in crystal grains having an NaCl type face-centered cubic structure, and a lower layer where a periodic compositional variation in Ti and Al is not present. The upper layer has a high Al amount, while the lower layer has a low Al amount. A value of I(200)/I(111) of the upper layer is greater than 10 and that of the lower layer is less than 3. The lower layer has a composition inclined structure where the Al amount increases from a tool body side towards an upper layer side. The lower layer contains multiple layers, where the Al amount of each layer can increase from the tool body side towards the upper layer side.