Abstract: There is provided an oxide sintered body including indium, tungsten, and at least one of zinc and tin, wherein the oxide sintered body includes, as a crystal phase, a complex oxide crystal phase including tungsten and at least one of zinc and tin. There is also provided a semiconductor device including an oxide semiconductor film formed by a sputtering method by using the oxide sintered body as a target.

Abstract: There is provided an oxide sintered body including indium, tungsten and zinc, wherein the oxide sintered body includes a bixbite type crystal phase as a main component and has an apparent density of higher than 6.5 g/cm3 and equal to or lower than 7.1 g/cm3, a content rate of tungsten to a total of indium, tungsten and zinc is higher than 1.2 atomic % and lower than 30 atomic %, and a content rate of zinc to the total of indium, tungsten and zinc is higher than 1.2 atomic % and lower than 30 atomic %. There are also provided a sputtering target including this oxide sintered body, and a semiconductor device including an oxide semiconductor film formed by a sputtering method by using the sputtering target.

Abstract: There is provided an oxide sintered material containing indium, tungsten, and zinc, the oxide sintered material including: a first crystal phase that is a main component of the oxide sintered material and includes a bixbyite type crystal phase; and a second crystal phase having a content of the zinc higher than a content of the zinc in the first crystal phase, the second crystal phase including particles having an average major axis size of not less than 3 ?m and not more than 50 ?m and having an average aspect ratio of not less than 4 and not more than 50.

Abstract: There is provided a semiconductor device including: a gate electrode; a channel layer arranged in a region directly below or directly above the gate electrode; a source electrode and a drain electrode arranged to be in contact with the channel layer; and a first insulating layer arranged between the gate electrode and the channel layer, the channel layer including a first oxide semiconductor, at least one of the source electrode and the drain electrode including a second oxide semiconductor, and the first oxide semiconductor and the second oxide semiconductor containing indium, tungsten and zinc. There is also provided a method for manufacturing the semiconductor device.

Abstract: There is provided an oxide sintered body including indium, tungsten and zinc, wherein the oxide sintered body includes a bixbite type crystal phase as a main component and has an apparent density of higher than 6.6 g/cm3 and equal to or lower than 7.5 g/cm3, a content rate of tungsten to a total of indium, tungsten and zinc in the oxide sintered body is higher than 0.5 atomic % and equal to or lower than 5.0 atomic %, a content rate of zinc to the total of indium, tungsten and zinc in the oxide sintered body is equal to or higher than 1.2 atomic % and equal to or lower than 19 atomic %, and an atomic ratio of zinc to tungsten is higher than 1.0 and lower than 60. There are also provided a sputtering target including this oxide sintered body, and a semiconductor device.

Abstract: There is provided an oxide sintered body including indium, tungsten, and at least one of zinc and tin, wherein the oxide sintered body includes, as a crystal phase, a complex oxide crystal phase including tungsten and at least one of zinc and tin. There is also provided a semiconductor device including an oxide semiconductor film formed by a sputtering method by using the oxide sintered body as a target.

Abstract: There is provided an oxide sintered body including indium, tungsten and zinc, wherein the oxide sintered body includes a bixbite type crystal phase as a main component and has an apparent density of higher than 6.5 g/cm3 and equal to or lower than 7.1 g/cm3, a content rate of tungsten to a total of indium, tungsten and zinc is higher than 1.2 atomic % and lower than 30 atomic %, and a content rate of zinc to the total of indium, tungsten and zinc is higher than 1.2 atomic % and lower than 30 atomic %. There are also provided a sputtering target including this oxide sintered body, and a semiconductor device including an oxide semiconductor film formed by a sputtering method by using the sputtering target.

Abstract: There is provided an oxide semiconductor film composed of nanocrystalline oxide or amorphous oxide, wherein the oxide semiconductor film includes indium, tungsten and zinc, a content rate of tungsten to a total of indium, tungsten and zinc in the oxide semiconductor film is higher than 0.5 atomic % and equal to or lower than 5 atomic %, and an electric resistivity is equal to or higher than 10?1 ?cm. There is also provided a semiconductor device including the oxide semiconductor film.

Abstract: There is provided an oxide sintered body including indium, tungsten and zinc, wherein the oxide sintered body includes a bixbite type crystal phase as a main component and has an apparent density of higher than 6.8 g/cm3 and equal to or lower than 7.2 g/cm3, a content rate of tungsten to a total of indium, tungsten and zinc is higher than 0.5 atomic % and equal to or lower than 1.2 atomic %, and a content rate of zinc to the total of indium, tungsten and zinc is higher than 0.5 atomic % and equal to or lower than 1.2 atomic %. There are also provided a method for manufacturing the oxide sintered body, a sputtering target including the oxide sintered body, and a semiconductor device including an oxide semiconductor film formed by a sputtering method by using the sputtering target.

Abstract: A sintered compact contains cubic sialon, ?-sialon, and at least one of a first component and a second component. The first component is at least one element selected from the group consisting of iron, cobalt, nickel, and group 4 elements, group 5 elements, and group 6 elements of the periodic table. The second component is at least one compound containing at least one element selected from the group consisting of group 4 elements, group 5 elements, and group 6 elements and at least one element selected from the group consisting of carbon, nitrogen, and boron.

Abstract: A sintered compact contains cubic sialon, ?-sialon, and at least one of a first component and a second component. The first component is at least one element selected from the group consisting of iron, cobalt, nickel, and group 4 elements, group 5 elements, and group 6 elements of the periodic table. The second component is at least one compound containing at least one element selected from the group consisting of group 4 elements, group 5 elements, and group 6 elements and at least one element selected from the group consisting of carbon, nitrogen, and boron.

Abstract: A condensing optical system having a condensed light spot with a small size and a large focal depth without causing a problem of a decrease in intensity of the condensed light spot or discontinuity of an intensity distribution in front and rear areas of a focal position is provided. The condensing optical system that condenses a laser beam generated by a laser source at a predetermined focal length is designed to satisfy Expressions (a) to (d), thereby producing 3rd and 5th spherical aberrations: |Z8|?0.1? or |Z15|?0.05?,??(a) Z8/Z15?3 or Z8/Z15<1,??(b) |Z8|<1.4?, and??(c) |Z15|<0.5?,??(d) where ? is a wavelength, Z8 is an 8th coefficient of coefficients of the Zernike fringe polynomial of wavefront aberration corresponding to a 3rd order spherical aberration, and Z15 is a 15th coefficient of the coefficients of the Zernike fringe polynomial of wavefront aberration corresponding to a 5th spherical aberration.

Abstract: Ultrashort pulse laser processing bores, welds or cuts objects (work pieces) by converging ultrashort laser pulses by a lens on the objects (work pieces) positioned at the focus and heating small spots or narrow lines on the objects (work pieces). Shortage of a focal depth of the lens prevents the ultrashort pulse laser processing from positioning the object (a work piece) and forming a deep, constant-diameter cylindrical hole. Z-parameter is defined to be Z=2fc?t/?i2, where ?t is a FWHM pulse width of the ultrashort pulse laser, ?i is a FWHM beam diameter of the ultrashort pulse, f is a focal length of the lens and c is the light velocity in vacuum. Selection of an optical system including a diffraction-type lens which gives the Z-parameter less than 1 (Z<1) prolongs the focal depth. Expansion of the focal depth facilitates the positioning of objects (work pieces) and enables the ultrashort pulse laser apparatus to bore a deep, constant-diameter cylindrical hole.

Abstract: A condensing optical system having a condensed light spot with a small size and a large focal depth without causing a problem of a decrease in intensity of the condensed light spot or discontinuity of an intensity distribution in front and rear areas of a focal position is provided. The condensing optical system that condenses a laser beam generated by a laser source at a predetermined focal length is designed to satisfy Expressions (a) to (d), thereby producing 3rd and 5th spherical aberrations: |Z8|?0.1? or |Z15|?0.05?, ??(a) Z8/Z15?3 or Z8/Z15<1, ??(b) |Z8|<1.4?, and ??(c) |Z15|<0.5?, ??(d) where ? is a wavelength, Z8 is an 8th coefficient of coefficients of the Zernike fringe polynomial of wavefront aberration corresponding to a 3rd order spherical aberration, and Z15 is a 15th coefficient of the coefficients of the Zernike fringe polynomial of wavefront aberration corresponding to a 5th spherical aberration.

Abstract: In order to easily control the laser pulse width and perform high-precision processing, the method for processing a material by laser ablation according to the present invention is characterized in that the material having a region of which a double logarithmic chart shows a linearly-shaped line with a gradient of not more than 0.5, when a relationship between laser pulse width and ablation threshold is represented in the logarithmic chart with a laser pulse width in picosecond plotted along the horizontal axis and an ablation threshold in J/cm2 plotted along the vertical axis, is processed by the pulsed laser beam having the laser pulse width within the region.

Abstract: Ultrashort pulse laser processing bores, welds or cuts objects (work pieces) by converging ultrashort laser pulses by a lens on the objects (work pieces) positioned at the focus and heating small spots or narrow lines on the objects (work pieces). Shortage of a focal depth of the lens prevents the ultrashort pulse laser processing from positioning the object (a work piece) and forming a deep, constant-diameter cylindrical hole. Z-parameter is defined to be Z=2fc?t/?i2, where ?t is a FWHM pulse width of the ultrashort pulse laser, ?i is a FWHM beam diameter of the ultrashort pulse, f is a focal length of the lens and c is the light velocity in vacuum. Selection of an optical system including a diffraction-type lens which gives the Z-parameter less than 1 (Z<1) prolongs the focal depth. Expansion of the focal depth facilitates the positioning of objects (work pieces) and enables the ultrashort pulse laser apparatus to bore a deep, constant-diameter cylindrical hole.

Abstract: The product management system for sputtering targets is configured between a target manufacturer and target customers via a computer network. The customer and the manufacturer share the various information relating to the product management, such as hysteresis information of the backing plates, product information of the sputtering targets, use information of the sputtering targets, or the like with each other.

Abstract: The product management system for sputtering targets is configured between a target manufacturer and target customers via a computer network. The customer and the manufacturer share the various information relating to the product management, such as hysteresis information of the backing plates, product information of the sputtering targets, use information of the sputtering targets, or the like with each other.