Patents by Inventor Kenichiro Kajio

Kenichiro Kajio has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device, semiconductor wafer structure and method for manufacturing the semiconductor wafer structure
    Patent number: 7825446
    Abstract: There is provided a semiconductor device including, a semiconductor substrate having a circuit forming region and a peripheral region, a base insulating film formed over the semiconductor substrate, a capacitor formed of a lower electrode, a capacitor dielectric film made of a ferroelectric material, and an upper electrode in this order over the base insulating film in the circuit forming region, an uppermost interlayer insulating film formed over the capacitor, a seal ring formed over the semiconductor substrate in the peripheral region, the seal ring having a height that reaches at least the upper surface of the interlayer insulating film, and surrounding the circuit forming region, a block film formed over the seal ring and over the interlayer insulating film in the circumference of the seal ring, and an electrode conductor pattern which is formed over the interlayer insulating film in the peripheral region, the electrode conductor pattern having an electrode pad, and having a cross-section exposed to a di
    Type: Grant
    Filed: July 17, 2008
    Date of Patent: November 2, 2010
    Assignee: Fujitsu Semiconductor Limited
    Inventors: Yasufumi Takahashi, Kenichiro Kajio
  • SEMICONDUCTOR DEVICE, SEMICONDUCTOR WAFER STRUCTURE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR WAFER STRUCTURE
    Publication number: 20080277705
    Abstract: There is provided a semiconductor device including, a semiconductor substrate having a circuit forming region and a peripheral region, a base insulating film formed over the semiconductor substrate, a capacitor formed of a lower electrode, a capacitor dielectric film made of a ferroelectric material, and an upper electrode in this order over the base insulating film in the circuit forming region, an uppermost interlayer insulating film formed over the capacitor, a seal ring formed over the semiconductor substrate in the peripheral region, the seal ring having a height that reaches at least the upper surface of the interlayer insulating film, and surrounding the circuit forming region, a block film formed over the seal ring and over the interlayer insulating film in the circumference of the seal ring, and an electrode conductor pattern which is formed over the interlayer insulating film in the peripheral region, the electrode conductor pattern having an electrode pad, and having a cross-section exposed to a di
    Type: Application
    Filed: July 17, 2008
    Publication date: November 13, 2008
    Applicant: FUJITSU LIMITED
    Inventors: Yasufumi TAKAHASHI, Kenichiro KAJIO