Abstract: According to one embodiment, a magnetic sensor includes a first element, a first wire, and a first magnetic part. The first element includes a first magnetic layer, a first counter magnetic layer, and a first nonmagnetic layer provided between the first magnetic layer and the first counter magnetic layer. A direction from the first counter magnetic layer toward the first magnetic layer is along a first direction. The first wire extends in a second direction crossing the first direction. The first magnetic part includes a first region and a first counter region. At least a portion of the first wire is between the first region and the first counter region in the first direction.

Abstract: An optical scanning device for displaying or capturing an image is used, the device including: an optical scanning unit configured to scan emitted light while drawing a spiral trajectory, wherein the unit includes: a light guide path configured to guide incident light to output the emitted light from an emission end; and a vibration unit configured to vibrate the emission end; a light emission control unit configured to control light emission of the emitted light; a polar coordinate generation unit configured to generate a radius and a deflection angle relating to the spiral trajectory; a driving signal generation unit configured to generate a driving signal for driving the vibration unit; an angle correction unit configured to perform calculation for correcting an angle based on information from the driving signal generation unit and output an corrected angle; and a coordinate calculation unit configured to calculate coordinates of an image.

Abstract: A substrate processing system includes a substrate processing apparatus and a control device. The substrate processing apparatus includes a chamber, and a placing table provided inside the chamber. The placing table places a substrate thereon, and includes a base and an electrostatic chuck provided on an upper surface of the base. The electrostatic chuck has a plurality of division regions each provided with a heater therein. The substrate processing system also includes a control device that includes a measuring unit that measures a resistance value of the heater for each of the division regions, an estimating unit that estimates a temperature of each of the division regions based on the resistance value of the heater measured by the measuring unit, and a power controller that controls a power supplied to the heater for each of the division regions based on the temperature estimated by the estimating unit.

Abstract: According to one embodiment, an electromagnetic wave attenuator includes a multilayer member, and a magnetic member. The multilayer member includes a plurality of magnetic layers and a plurality of nonmagnetic layers. The plurality of nonmagnetic layers is conductive. A direction from one of the plurality of magnetic layers toward an other one of the plurality of magnetic layers is aligned with a first direction from the multilayer member toward the magnetic member. One of the plurality of nonmagnetic layers is between the one of the plurality of magnetic layers and the other one of the plurality of magnetic layers. A thickness along the first direction of the magnetic member is not less than ½ of a thickness along the first direction of the multilayer member.

Abstract: According to one embodiment, an electromagnetic wave attenuator includes a plurality of magnetic layers, and a plurality of nonmagnetic layers. The plurality of nonmagnetic layers is conductive. A direction from one of the plurality of magnetic layers toward an other one of the plurality of magnetic layers is aligned with a first direction. One of the plurality of nonmagnetic layers is between the one of the plurality of magnetic layers and the other one of the plurality of magnetic layers. A first thickness along the first direction of the one of the plurality of magnetic layers is not less than ½ times a second thickness along the first direction of the one of the plurality of nonmagnetic layers.

Abstract: According to one embodiment, an electromagnetic wave attenuator includes a multilayer member, and a magnetic member. The multilayer member includes a plurality of magnetic layers and a plurality of nonmagnetic layers. The plurality of nonmagnetic layers is conductive. A direction from one of the plurality of magnetic layers toward an other one of the plurality of magnetic layers is aligned with a first direction from the multilayer member toward the magnetic member. One of the plurality of nonmagnetic layers is between the one of the plurality of magnetic layers and the other one of the plurality of magnetic layers. A thickness along the first direction of the magnetic member is not less than ½ of a thickness along the first direction of the multilayer member.

Abstract: According to one embodiment, a magnetic sensor includes first and second elements, first and second interconnects, a first circuit portion electrically connected to the first and second interconnects and a second circuit portion electrically connected to the first and second elements. The first circuit portion supplies a first alternating current to the first interconnect and supplies a second alternating current to the second interconnect. The second circuit portion supplies a first element current to the first element and supplies a second element current to the second element. At a first time, the first alternating current has a first alternating current orientation, and the second alternating current has a second alternating current orientation. At a second time, the first alternating current has an opposite orientation to the first alternating current orientation, and the second alternating current has an opposite orientation to the second alternating current orientation.

Abstract: According to one embodiment, a magnetic sensor includes a first element, a first wire, and a first magnetic part. The first element includes a first magnetic layer, a first counter magnetic layer, and a first nonmagnetic layer provided between the first magnetic layer and the first counter magnetic layer. A direction from the first counter magnetic layer toward the first magnetic layer is along a first direction. The first wire extends in a second direction crossing the first direction. The first magnetic part includes a first region and a first counter region. At least a portion of the first wire is between the first region and the first counter region in the first direction.

Abstract: According to one embodiment, an electromagnetic wave attenuator includes a multilayer member, and a magnetic member. The multilayer member includes a plurality of magnetic layers and a plurality of nonmagnetic layers. The plurality of nonmagnetic layers is conductive. A direction from one of the plurality of magnetic layers toward an other one of the plurality of magnetic layers is aligned with a first direction from the multilayer member toward the magnetic member. One of the plurality of nonmagnetic layers is between the one of the plurality of magnetic layers and the other one of the plurality of magnetic layers. A thickness along the first direction of the magnetic member is not less than ½ of a thickness along the first direction of the multilayer member.

Abstract: According to one embodiment, an electronic device includes first to third members, first and second elements. The second member is between the first and third members. The first element is between the first and second members. The second element is between the second and third members. The first member includes first nonmagnetic layers and a first magnetic layer. The first magnetic layer is provided between one of the first nonmagnetic layers and an other one of the first nonmagnetic layers. The second member includes second nonmagnetic layers and a second magnetic layer. The second magnetic layer is provided between one of the second nonmagnetic layers and an other one of the second nonmagnetic layers. The third member includes third nonmagnetic layers and a third magnetic layer. The third magnetic layer is provided between one of the third nonmagnetic layers and an other one of the third nonmagnetic layers.

Abstract: According to one embodiment, an electronic device includes first to third members, first and second elements. The second member is between the first and third members. The first element is between the first and second members. The second element is between the second and third members. The first member includes first nonmagnetic layers and a first magnetic layer. The first magnetic layer is provided between one of the first nonmagnetic layers and an other one of the first nonmagnetic layers. The second member includes second nonmagnetic layers and a second magnetic layer. The second magnetic layer is provided between one of the second nonmagnetic layers and an other one of the second nonmagnetic layers. The third member includes third nonmagnetic layers and a third magnetic layer. The third magnetic layer is provided between one of the third nonmagnetic layers and an other one of the third nonmagnetic layers.

Abstract: According to one embodiment, a magnetic sensor includes first and second elements, first and second interconnects, a first circuit portion electrically connected to the first and second interconnects and a second circuit portion electrically connected to the first and second elements. The first circuit portion supplies a first alternating current to the first interconnect and supplies a second alternating current to the second interconnect. The second circuit portion supplies a first element current to the first element and supplies a second element current to the second element. At a first time, the first alternating current has a first alternating current orientation, and the second alternating current has a second alternating current orientation. At a second time, the first alternating current has an opposite orientation to the first alternating current orientation, and the second alternating current has an opposite orientation to the second alternating current orientation.

Abstract: According to one embodiment, a magnetic recording head includes a magnetic pole, a stacked body, and a first non-magnetic layer. The stacked body includes a first magnetic layer, a second magnetic layer provided between the first magnetic layer and the magnetic pole, and a non-magnetic intermediate layer provided between the first magnetic layer and the second magnetic layer. The first non-magnetic layer is provided between the second magnetic layer and the magnetic pole, and contacts the magnetic pole and the second magnetic layer. The first magnetic layer has a first thickness and a first saturation magnetic flux density. The second magnetic layer has a second thickness and a second saturation magnetic flux density. A second product of the second thickness and the second saturation magnetic flux density is larger than a first product of the first thickness and the first saturation magnetic flux density.

Abstract: An object of the invention is to provide a technology for further improving scanning performance. Provided is an optical scanning device including: a scanning unit including an optical waveguide configured to guide incident light and emit the light from an emission end, and a vibration unit configured to generate a vibration and vibrate the emission end; and a signal transmission unit configured to transmit a signal to the scanning unit and cause the scanning unit to scan an object, characterized in that the scanning unit includes a first bonding and vibration attenuating unit configured to bond, with an elastic member, an end surface of the vibration unit closer to the emission end and the optical waveguide.

Abstract: A memory system has a nonvolatile memory having a plurality of readable and writable memory cells, a write voltage control unit that controls at least one of a voltage value and a pulse width of a write voltage of the nonvolatile memory in accordance with a weight of a signal processing path or a signal processing node, a write unit that writes data in two or more memory cell groups among the plurality of memory cells using the write voltage controlled by the write voltage control unit, a reversal probability detection unit that detects a reversal probability of the memory cell group when writing data is written by the write unit, and a weight conversion unit that converts the detected reversal probability into a weight.

Abstract: According to one embodiment, a magnetic recording head includes a magnetic pole, a stacked body, and a first non-magnetic layer. The stacked body includes a first magnetic layer, a second magnetic layer provided between the first magnetic layer and the magnetic pole, and a non-magnetic intermediate layer provided between the first magnetic layer and the second magnetic layer. The first non-magnetic layer is provided between the second magnetic layer and the magnetic pole, and contacts the magnetic pole and the second magnetic layer. The first magnetic layer has a first thickness and a first saturation magnetic flux density. The second magnetic layer has a second thickness and a second saturation magnetic flux density. A second product of the second thickness and the second saturation magnetic flux density is larger than a first product of the first thickness and the first saturation magnetic flux density.

Abstract: A magnetic recording apparatus includes a magnetic recording medium; a magnetic recording head including a first magnetic pole part, a second magnetic pole part, and a magnetic flux control part provided between the first magnetic pole part and the second magnetic pole part, wherein the magnetic flux control part includes a first layer provided between the first magnetic pole part and the second magnetic pole part, a second layer provided between the first magnetic pole part and the first layer, and a third layer provided between the second magnetic pole part and the first layer; an electrode for applying a current to the magnetic flux control part; and an electric circuit for energizing the current to the electrode, wherein an oscillation frequency of magnetization of the magnetic layer is greater than a ferromagnetic resonance frequency of the magnetic recording medium.

Abstract: A memory system has a nonvolatile memory having a plurality of readable and writable memory cells, a write voltage control unit that controls at least one of a voltage value and a pulse width of a write voltage of the nonvolatile memory in accordance with a weight of a signal processing path or a signal processing node, a write unit that writes data in two or more memory cell groups among the plurality of memory cells using the write voltage controlled by the write voltage control unit, a reversal probability detection unit that detects a reversal probability of the memory cell group when writing data is written by the write unit, and a weight conversion unit that converts the detected reversal probability into a weight.

Abstract: According to one embodiment, a magnetic recording head includes a magnetic pole, a stacked body, and a first non-magnetic layer. The stacked body includes a first magnetic layer, a second magnetic layer provided between the first magnetic layer and the magnetic pole, and a non-magnetic intermediate layer provided between the first magnetic layer and the second magnetic layer. The first non-magnetic layer is provided between the second magnetic layer and the magnetic pole, and contacts the magnetic pole and the second magnetic layer. The first magnetic layer has a first thickness and a first saturation magnetic flux density. The second magnetic layer has a second thickness and a second saturation magnetic flux density. A second product of the second thickness and the second saturation magnetic flux density is larger than a first product of the first thickness and the first saturation magnetic flux density.

Abstract: According to one embodiment, a magnetic head includes a magnetic pole, and a first shield, and a stacked body provided between the magnetic pole and the first shield. The stacked body includes a first layer, a second layer and a third layer. The first layer includes at least one first element selected from the group consisting of Fe, Co, and Ni. The second layer is provided between the magnetic pole and the first layer, and includes at least one second element selected from the group consisting of Cr, V, Mn, Ti, and Sc. The third layer is provided between the first layer and the first shield, and includes at least one third element selected from the group consisting of Cr, V, Mn, Ti, and Sc.