Patents by Inventor Kenichirou KADA
Kenichirou KADA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10769011Abstract: A memory device includes a semiconductor memory unit, a controller circuit configured to communicate with a host through a serial interface, store write data to be written into a page of the semiconductor memory unit in a data buffer, and an error-correcting code (ECC) circuit configured to generate an error correction code from the write data if the ECC circuit is enabled. The controller circuit writes the error correction code with the write data into the page if the ECC circuit is enabled. A maximum column address of the page which is accessible from the host changes depending on whether or not the ECC circuit is enabled.Type: GrantFiled: March 4, 2016Date of Patent: September 8, 2020Assignee: TOSHIBA MEMORY CORPORATIONInventors: Shunsuke Kodera, Toshihiko Kitazume, Kenichirou Kada, Nobuhiro Tsuji, Shinya Takeda, Tetsuya Iwata, Yoshio Furuyama, Hirosuke Narai
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Patent number: 10732863Abstract: A memory system includes a controller that recognizes, as a command, a signal received immediately after a chip select signal is received from a host device, and a memory that includes a plurality of blocks. When the command is a first command, the controller outputs to the host device, information indicating whether at least one of a write operation and an erase operation with respect to at least one particular block is prohibited.Type: GrantFiled: February 22, 2017Date of Patent: August 4, 2020Assignee: Toshiba Memory CorporationInventors: Shunsuke Kodera, Kenichirou Kada, Shinya Takeda, Kiyotaka Hayashi, Yoshio Furuyama, Tetsuya Iwata, Wangying Lin
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Patent number: 10621034Abstract: A memory device includes a semiconductor memory unit, a controller circuit configured to communicate with a host through a serial interface, store write data to be written into a page of the semiconductor memory unit in a data buffer, and an error-correcting code (ECC) circuit configured to generate an error correction code from the write data if the ECC circuit is enabled. The controller circuit writes the error correction code with the write data into the page if the ECC circuit is enabled. A maximum column address of the page which is accessible from the host changes depending on whether or not the ECC circuit is enabled.Type: GrantFiled: February 22, 2017Date of Patent: April 14, 2020Assignee: Toshiba Memory CorporationInventors: Shunsuke Kodera, Toshihiko Kitazume, Kenichirou Kada, Nobuhiro Tsuji, Shinya Takeda, Tetsuya Iwata, Yoshio Furuyama, Hirosuke Narai
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Patent number: 10445174Abstract: A memory device includes a semiconductor memory unit, a controller configured to communicate with a host through a serial interface and read data stored in a page of the semiconductor memory unit in response to a read command received through the serial interface, and an error-correcting code (ECC) circuit configured to carry out error correction with respect to data read from each unit region of the page. The controller is further configured to transmit, through the serial interface to the host, information that indicates whether or not a number of error bits detected by the ECC circuit in the data read from each unit region of the page through the error correction is greater than a predetermined value.Type: GrantFiled: February 22, 2017Date of Patent: October 15, 2019Assignee: TOSHIBA MEMORY CORPORATIONInventors: Shunsuke Kodera, Toshihiko Kitazume, Kenichirou Kada, Nobuhiro Tsuji, Shinya Takeda, Tetsuya Iwata, Yoshio Furuyama, Hirosuke Narai
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Patent number: 10310755Abstract: A memory system includes a semiconductor memory device including a plurality of blocks, and a controller configured to register a block designated in a protection command as a protected block in a storage region. When the control circuit receives from a host a command to erase the protected block or write to the protected block, the control circuit does not issue a corresponding erase or write command to the semiconductor memory device and notifies the host of the failure to execute the command.Type: GrantFiled: February 24, 2016Date of Patent: June 4, 2019Assignee: TOSHIBA MEMORY CORPORATIONInventors: Shunsuke Kodera, Toshihiko Kitazume, Kenichirou Kada, Nobuhiro Tsuji, Shinya Takeda, Tetsuya Iwata, Yoshio Furuyama, Hirosuke Narai
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Patent number: 10289482Abstract: A memory device includes a semiconductor memory unit and a controller circuit configured to communicate with a host through a serial interface and access the semiconductor memory unit in response to commands received through the serial interface. The controller circuit, in response to a host command to read parameters of the memory device, updates at least one of parameters of the memory device stored in the memory device based on operational settings of the memory device, and transmits the updated parameters through the serial interface to the host.Type: GrantFiled: March 4, 2016Date of Patent: May 14, 2019Assignee: Toshiba Memory CorporationInventors: Shunsuke Kodera, Toshihiko Kitazume, Kenichirou Kada, Nobuhiro Tsuji, Shinya Takeda, Tetsuya Iwata, Yoshio Furuyama, Hirosuke Narai
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Patent number: 10235070Abstract: A memory system includes a semiconductor memory device including a plurality of blocks, and a controller configured to register a block designated in a protection command as a protected block in a storage region. When the control circuit receives from a host a command to erase the protected block or write to the protected block, the control circuit does not issue a corresponding erase or write command to the semiconductor memory device and notifies the host of the failure to execute the command.Type: GrantFiled: February 22, 2017Date of Patent: March 19, 2019Assignee: TOSHIBA MEMORY CORPORATIONInventors: Shunsuke Kodera, Toshihiko Kitazume, Kenichirou Kada, Nobuhiro Tsuji, Shinya Takeda, Tetsuya Iwata, Yoshio Furuyama, Hirosuke Narai
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Patent number: 9959937Abstract: A memory system includes a semiconductor memory device, a controller configured to access the semiconductor module, a plurality of pins for connection to the outside of the memory system, the pins configured to receive and output serial data, and a test circuit. When one of the pins receives serial test data, the test circuit converts the serial test data into parallel test data, and outputs the parallel test data to the semiconductor memory device for writing therein, and when the test circuit receives parallel test data written in the semiconductor memory device, the test circuit converts the parallel test data to serial test data, and outputs the serial test data through one of the pins for test of the memory system.Type: GrantFiled: March 4, 2016Date of Patent: May 1, 2018Assignee: TOSHIBA MEMORY CORPORATIONInventors: Kenichirou Kada, Shinya Takeda, Toshihiko Kitazume, Mikio Takasugi, Nobuhiro Tsuji, Shunsuke Kodera, Tetsuya Iwata, Yoshio Furuyama, Hirosuke Narai
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Patent number: 9891987Abstract: A memory device includes a semiconductor memory unit, a controller configured to communicate with a host through a serial interface and read data stored in a page of the semiconductor memory unit in response to a read command received through the serial interface, and an error-correcting code (ECC) circuit configured to carry out error correction with respect to data read from each unit region of the page. The controller is further configured to transmit, through the serial interface to the host, information that indicates whether or not a number of error bits detected by the ECC circuit in the data read from each unit region of the page through the error correction is greater than a predetermined value.Type: GrantFiled: March 4, 2016Date of Patent: February 13, 2018Assignee: TOSHIBA MEMORY CORPORATIONInventors: Shunsuke Kodera, Toshihiko Kitazume, Kenichirou Kada, Nobuhiro Tsuji, Shinya Takeda, Tetsuya Iwata, Yoshio Furuyama, Hirosuke Narai
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Publication number: 20180024763Abstract: A memory system includes a controller that recognizes, as a command, a signal received immediately after a chip select signal is received from a host device, and a memory that includes a plurality of blocks. When the command is a first command, the controller outputs to the host device, information indicating whether at least one of a write operation and an erase operation with respect to at least one particular block is prohibited.Type: ApplicationFiled: February 22, 2017Publication date: January 25, 2018Inventors: Shunsuke KODERA, Kenichirou KADA, Shinya TAKEDA, Kiyotaka HAYASHI, Yoshio FURUYAMA, Tetsuya IWATA, Wangying LIN
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Patent number: 9747994Abstract: A memory system includes first through fifth pins connectable to a host device to output to the host device a first signal through the third pin and to receive from the host device a first chip select signal through the first pin, a second chip select signal through the second pin, a second signal through the fourth pin, and a clock signal through the fifth pin, an interface circuit configured to recognize, as a command, the second signal received through the fourth pin immediately after detecting the first or second chip select signal, and first and second memory cell arrays. The interface circuit and the first and second memory cell arrays are provided in one common package, and is configured to access the first memory cell array when detecting the first chip select signal, and to access the second memory cell array when detecting the second chip select signal.Type: GrantFiled: August 10, 2016Date of Patent: August 29, 2017Assignee: Kabushiki Kaisha ToshibaInventors: Hirosuke Narai, Toshihiko Kitazume, Kenichirou Kada, Nobuhiro Tsuji, Shunsuke Kodera, Tetsuya Iwata, Yoshio Furuyama, Shinya Takeda
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Patent number: 9728275Abstract: A memory system includes a plurality of pins for connection to the outside of the memory system, one of the pins being configured to receive a command signal, a memory cell array including a plurality of first memory blocks and a second memory block in which status data indicating which of the first memory blocks is defective, is stored, and a control circuit configured to determine whether or not a first memory block targeted by the command signal is indicated as being defective in the status data. The control circuit allows an operation to be performed on the targeted first memory block in accordance with the command signal when the targeted first memory block is not indicated as being defective, and blocks the operation to be performed on the targeted first memory block when the targeted first memory block is indicated as being defective.Type: GrantFiled: March 4, 2016Date of Patent: August 8, 2017Assignee: Kabushiki Kaisha ToshibaInventors: Nobuhiro Tsuji, Kenichirou Kada, Shinya Takeda, Toshihiko Kitazume, Shunsuke Kodera, Tetsuya Iwata, Yoshio Furuyama, Hirosuke Narai
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Publication number: 20170160946Abstract: A memory device includes a semiconductor memory unit, a controller configured to communicate with a host through a serial interface and read data stored in a page of the semiconductor memory unit in response to a read command received through the serial interface, and an error-correcting code (ECC) circuit configured to carry out error correction with respect to data read from each unit region of the page. The controller is further configured to transmit, through the serial interface to the host, information that indicates whether or not a number of error bits detected by the ECC circuit in the data read from each unit region of the page through the error correction is greater than a predetermined value.Type: ApplicationFiled: February 22, 2017Publication date: June 8, 2017Inventors: Shunsuke KODERA, Toshihiko KITAZUME, Kenichirou KADA, Nobuhiro TSUJI, Shinya TAKEDA, Tetsuya IWATA, Yoshio FURUYAMA, Hirosuke NARAI
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Publication number: 20170160972Abstract: A memory system includes a semiconductor memory device including a plurality of blocks, and a controller configured to register a block designated in a protection command as a protected block in a storage region. When the control circuit receives from a host a command to erase the protected block or write to the protected block, the control circuit does not issue a corresponding erase or write command to the semiconductor memory device and notifies the host of the failure to execute the command.Type: ApplicationFiled: February 22, 2017Publication date: June 8, 2017Inventors: Shunsuke KODERA, Toshihiko KITAZUME, Kenichirou KADA, Nobuhiro TSUJI, Shinya TAKEDA, Tetsuya IWATA, Yoshio FURUYAMA, Hirosuke NARAI
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Publication number: 20170161140Abstract: A memory device includes a semiconductor memory unit, a controller circuit configured to communicate with a host through a serial interface, store write data to be written into a page of the semiconductor memory unit in a data buffer, and an error-correcting code (ECC) circuit configured to generate an error correction code from the write data if the ECC circuit is enabled. The controller circuit writes the error correction code with the write data into the page if the ECC circuit is enabled. A maximum column address of the page which is accessible from the host changes depending on whether or not the ECC circuit is enabled.Type: ApplicationFiled: February 22, 2017Publication date: June 8, 2017Inventors: Shunsuke KODERA, Toshihiko KITAZUME, Kenichirou KADA, Nobuhiro TSUJI, Shinya TAKEDA, Tetsuya IWATA, Yoshio FURUYAMA, Hirosuke NARAI
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Patent number: 9620230Abstract: A memory device includes a semiconductor memory unit, and a controller configured to communicate with a host through a serial interface and access the memory semiconductor unit in response to commands received through the serial interface. The controller, in response to a first read command received through the serial interface to read data in a first page of the semiconductor memory unit, issues a first command to the semiconductor memory unit to read data in the first page and, in addition, a second command to read data in a second page that is consecutive to the first page and not specified in the first read command.Type: GrantFiled: March 4, 2016Date of Patent: April 11, 2017Assignee: Kabushiki Kaisha ToshibaInventors: Shinya Takeda, Toshihiko Kitazume, Kenichirou Kada, Nobuhiro Tsuji, Shunsuke Kodera, Tetsuya Iwata, Yoshio Furuyama, Hirosuke Narai
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Publication number: 20170062063Abstract: A memory device includes a semiconductor memory unit, and a controller configured to communicate with a host through a serial interface and access the memory semiconductor unit in response to commands received through the serial interface. The controller, in response to a first read command received through the serial interface to read data in a first page of the semiconductor memory unit, issues a first command to the semiconductor memory unit to read data in the first page and, in addition, a second command to read data in a second page that is consecutive to the first page and not specified in the first read command.Type: ApplicationFiled: March 4, 2016Publication date: March 2, 2017Inventors: Shinya TAKEDA, Toshihiko KITAZUME, Kenichirou KADA, Nobuhiro TSUJI, Shunsuke KODERA, Tetsuya IWATA, Yoshio FURUYAMA, Hirosuke NARAI
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Publication number: 20170060676Abstract: A memory device includes a semiconductor memory unit, a controller configured to communicate with a host through a serial interface and read data stored in a page of the semiconductor memory unit in response to a read command received through the serial interface, and an error-correcting code (ECC) circuit configured to carry out error correction with respect to data read from each unit region of the page. The controller is further configured to transmit, through the serial interface to the host, information that indicates whether or not a number of error bits detected by the ECC circuit in the data read from each unit region of the page through the error correction is greater than a predetermined value.Type: ApplicationFiled: March 4, 2016Publication date: March 2, 2017Inventors: Shunsuke KODERA, Toshihiko KITAZUME, Kenichirou KADA, Nobuhiro TSUJI, Shinya TAKEDA, Tetsuya IWATA, Yoshio FURUYAMA, Hirosuke NARAI
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Publication number: 20170062076Abstract: A memory system includes a plurality of pins for connection to the outside of the memory system, one of the pins being configured to receive a command signal, a memory cell array including a plurality of first memory blocks and a second memory block in which status data indicating which of the first memory blocks is defective, is stored, and a control circuit configured to determine whether or not a first memory block targeted by the command signal is indicated as being defective in the status data. The control circuit allows an operation to be performed on the targeted first memory block in accordance with the command signal when the targeted first memory block is not indicated as being defective, and blocks the operation to be performed on the targeted first memory block when the targeted first memory block is indicated as being defective.Type: ApplicationFiled: March 4, 2016Publication date: March 2, 2017Inventors: Nobuhiro TSUJI, Kenichirou KADA, Shinya TAKEDA, Toshihiko KITAZUME, Shunsuke KODERA, Tetsuya IWATA, Yoshio FURUYAMA, Hirosuke NARAI
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Publication number: 20170062077Abstract: A memory system includes a semiconductor memory device, a controller configured to access the semiconductor module, a plurality of pins for connection to the outside of the memory system, the pins configured to receive and output serial data, and a test circuit. When one of the pins receives serial test data, the test circuit converts the serial test data into parallel test data, and outputs the parallel test data to the semiconductor memory device for writing therein, and when the test circuit receives parallel test data written in the semiconductor memory device, the test circuit converts the parallel test data to serial test data, and outputs the serial test data through one of the pins for test of the memory system.Type: ApplicationFiled: March 4, 2016Publication date: March 2, 2017Inventors: Kenichirou KADA, Shinya TAKEDA, Toshihiko KITAZUME, Mikio TAKASUGI, Nobuhiro TSUJI, Shunsuke KODERA, Tetsuya IWATA, Yoshio FURUYAMA, Hirosuke NARAI