Patents by Inventor Kenji Harafugi

Kenji Harafugi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Dry-etching process simulator
    Patent number: 5421934
    Abstract: A new surface reaction model has been presented to simulate topological evolutions by taking into account the existence of absorbed radicals on the substrate surface. The model treats the etching rate as a function of the coverage ratio by absorbed radicals on the surface. Based on the model, a two-dimensional topography simulator has been provided. The simulator is applied to silicon-dioxide trench teachings made by hydrofluorcarbon gases. The topography simulator is used in a dry-etching process for realizing sub-half micron patternings.
    Type: Grant
    Filed: March 26, 1993
    Date of Patent: June 6, 1995
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Akio Misaka, Kenji Harafugi, Masafumi Kubbota, Noboru Nomura