Abstract: A capacitor provided with a dielectric film, and a first electrode and second electrode formed sandwiching it and facing each other, wherein the dielectric film has a density exceeding 72% of the theoretical density calculated based on the lattice constant, and either or both of said first electrode and said second electrode contain at least one metal selected from the group consisting of Cu, Ni, Al, stainless steel and a nickel-based alloy.

Abstract: To provide a dielectric thin with a high dielectric constant, a low leakage current, and stable physical properties and electrical properties and to provide a thin film capacitor or other thin film dielectric device with a high capacitance and high reliability and a method of production of the same, a dielectric thin film containing oxides such as barium strontium titanate expressed by the formula (BaxSr(1-x))aTiO3 (0.5<x?1.0, 0.96<a?1.00) and having a thickness of not more than 500 nm and a method of production of a thin film dielectric device including a step of annealing the dielectric thin film in an atmosphere of an oxidizing gas after forming a dielectric thin film on a conductive electrode.

Abstract: A dielectric device comprises a dielectric layer and first to nth metal layers (where n is an integer of 2 or greater) in contact with the dielectric layer. At least one of the first to nth metal layers contains a base metal. Interfaces between the first to nth metal layers and the dielectric layer have respective arithmetic mean roughnesses of Ra1 to Ran (nm), while an average value Ram (nm) of the arithmetic mean roughnesses of Ra1 to Ran (nm) and a thickness T (nm) of the dielectric layer satisfy T/Ram?1.3.

Abstract: A method for manufacturing a dielectric element including the steps of: preparing a lower electrode; forming a dielectric on the lower electrode to fabricate a first laminated structure; annealing the first laminated structure; forming an upper electrode on a dielectric film to fabricate a second laminated structure; and annealing the second laminated structure under a reduced pressure atmosphere at a temperature of 150° C. or higher.

Abstract: A thin film capacitor with high capacity and low leak current is provided. The thin film capacitor includes a nickel substrate with nickel (Ni) purity of 99.99 weight percent or above, and a dielectric layer and an electrode layer disposed in this order on the nickel substrate. The thin film capacitor is typically manufactured as follows. A precursor dielectric layer is formed on a nickel substrate with nickel purity of 99.99 weight percent or above, and is subjected to annealing to form a dielectric layer. The diffusion of impurities from the nickel substrate to the precursor dielectric layer during annealing is suppressed.

Abstract: A dielectric device has a first conductor and a dielectric disposed thereon. An intermediate region is formed between the first conductor and dielectric. In the intermediate region, an additive different from the first conductor and dielectric and the dielectric are mixed with each other. The additive contains at least one element of Si, Al, P, Mg, Mn, Y,V,Mo, Co, Nb, Fe, and Cr.

Abstract: A capacitor provided with a dielectric film, and a first electrode and second electrode formed sandwiching it and facing each other, wherein the dielectric film has a density exceeding 72% of the theoretical density calculated based on the lattice constant, and either or both of said first electrode and said second electrode contain at least one metal selected from the group consisting of Cu, Ni, Al, stainless steel and inconel.

Abstract: The present invention provides a dielectric thin film whose composition is expressed by the formula (Ba1-xSrx)yTiO3 (0.18?x?0.45, 0.96?y?1.04), and whose peak intensity ratio I(100)I(110) is from 0.02 to 2.0 when I(100) is the peak intensity of the diffraction line of the (100) plane, and I(110) is the peak intensity of the diffraction line of the (110) plane in an X-ray diffraction chart of the dielectric thin film.

Abstract: To provide a dielectric thin with a high dielectric constant, a low leakage current, and stable physical properties and electrical properties and to provide a thin film capacitor or other thin film dielectric device with a high capacitance and high reliability and a method of production of the same, a dielectric thin film containing oxides such as barium strontium titanate expressed by the formula (BaxSr(1-x))aTiO3 (0.5<x?1.0, 0.96<a?1.00) and having a thickness of not more than 500 nm and a method of production of a thin film dielectric device including a step of annealing the dielectric thin film in an atmosphere of an oxidizing gas after forming a dielectric thin film on a conductive electrode.

Abstract: Provided is a piezoelectric ceramic capable of improving its piezoelectric properties. The piezoelectric ceramic comprises a rhombohedral perovskite structure compound such as (Na0.5Bi0.5)TiO3, a tetragonal perovskite structure compound such as BaTiO3 and (K0.5Bi0.5)TiO3 and an orthorhombic perovskite structure compound such as NaNbO3, KNbO3 and CaTiO3, or the rhombohedral perovskite structure compound, the tetragonal perovskite structure compound and a cubic perovskite structure compound such as SrTiO3. Three kinds of perovskite structure compounds having different crystal structures are comprised, so that the piezoelectric properties can be improved. The three kinds of compounds may perfectly form a solid solution or not.

Abstract: Provided is a piezoelectric ceramic capable of improving its piezoelectric properties. The piezoelectric ceramic comprises a rhombohedral perovskite structure compound such as (Na0.5Bi0.5)TiO3, a tetragonal perovskite structure compound such as BaTiO3 and (K0.5Bi0.5)TiO3 and an orthorhombic perovskite structure compound such as NaNbO3, KNbO3 and CaTiO3, or the rhombohedral perovskite structure compound, the tetragonal perovskite structure compound and a cubic perovskite structure compound such as SrTiO3. Three kinds of perovskite structure compounds having different crystal structures are comprised, so that the piezoelectric properties can be improved. The three kinds of compounds may perfectly form a solid solution or not.

Abstract: An electronic part comprises a main part, a terminal electrode, and a film. The main part includes a sintered piezoelectric ceramic element, wherein a plurality of internal electrode layers and piezoelectric layers are alternately stacked. The terminal electrode is provided at an edge of the sintered piezoelectric ceramic element and electrically conducting to the internal electrodes. The film is provided on a surface of the sintered piezoelectric ceramic element and the exposed internal electrodes, and is made of a glass insulating material.

Abstract: A multilayer piezoelectric device comprised of piezoelectric layers and internal electrode layers alternately stacked, wherein the internal electrode layers have a thickness of 1 to 3 &mgr;m and contain 20 to 90 wt % of gold as an essential ingredient, based on 100 wt % of the metal ingredients in the internal electrode layers, and at least one element selected from palladium, platinum, and rhodium.

Abstract: An electronic part comprises a main part, a terminal electrode, and a film. The main part includes a sintered piezoelectric ceramic element, wherein a plurality of internal electrode layers and piezoelectric layers are alternately stacked. The terminal electrode is provided at an edge of the sintered piezoelectric ceramic element and electrically conducting to the internal electrodes. The film is provided on a surface of the sintered piezoelectric ceramic element and the exposed internal electrodes, and is made of a glass insulating material.

Abstract: The object of the present invention is to realize the piezoelectric ceramics which, even when used as high frequency elements utilizing third harmonics wave of thickness longitudinal vibration, are small in temperature coefficient of resonant frequency and high in mechanical Q value and easy to correspond to the trend toward miniaturization and low voltage driving. When the piezoelectric ceramics with lead titanate as its main component are manufactured in order to achieve this object, it was decided that the piezoelectric ceramics be manufactured by the manufacturing method, wherein a heat treatment is performed between a firing process and a polarization process in the atmosphere of oxygen partial pressure less than the oxygen partial pressure of the atmospheric pressure at temperatures more than 500.degree. C. and not more than the firing temperatures.