Abstract: A photonic crystal surface-emitting laser includes a light emitting region from which light is emitted in a direction crossing an in-plane direction, and a current blocking region that is adjacent to the light emitting region in the in-plane direction and in which current is less likely to flow than in the light emitting region. The light emitting region and the current blocking region each include a photonic crystal layer. The photonic crystal layer has a first region and second regions periodically arranged in the first region. A refractive index of each of the second regions is different from that of the first region. The light emitting region includes a first semiconductor layer, an active layer, and a second semiconductor layer. The first semiconductor layer, the active layer, and the second semiconductor layer are sequentially stacked on top of one another in an emission direction of the light.

Abstract: The present invention addresses the problem of reducing the undried residue when recycling a fine powder of water-absorbing resin. The present invention is a method for producing a water-absorbing resin, wherein: a fine powder recycling step includes vi-1) a granulation step for obtaining a granulated gel, vi-2) a granulated gel addition step, and vi-3) a gel mixing step; the solids content of the granulated gel in the granulated gel addition step is 50-90% by mass; and the temperature of the granulated gel and the temperature of the water-containing gel-like crosslinked polymer is 50-100° C.

Abstract: A two-dimensional photonic crystal laser includes: electrodes; an active layer; and a two-dimensional photonic crystal layer in which modified refractive index regions are disposed to be shifted by different shift amounts from respective lattice points or/and are disposed at the respective lattice points with different areas, the shift amount or/and the area is/are modified with a composite modulation period and expressed by a modulation phase ?(r?) expressed using a vector r? indicating a position of each lattice point of the two-dimensional lattice, a vector kn? indicating a combination of an inclination angle and an azimuthal angle of each of n laser beams mutually differing in the inclination angle and/or the azimuthal angle, and an amplitude An and a phase exp(i?n) determined for each n and the amplitude An and/or the phase exp(i?n) for each value of n differ(s) from each other in at least two different values of n.

Abstract: A two-dimensional photonic-crystal surface-emitting laser includes: a two-dimensional photonic-crystal layer; an active layer provided on one surface side of the two-dimensional photonic-crystal layer; and a reflection layer provided on the other surface side of the two-dimensional photonic-crystal layer or on a side opposite to the two-dimensional photonic-crystal layer so as to be spaced apart from the two-dimensional photonic-crystal layer, wherein a distance d between surfaces of the two-dimensional photonic-crystal layer and the reflection layer facing each other is set such that a radiation coefficient difference ??v=(?v1??v0), which is a value obtained by subtracting a radiation coefficient ?v0 of a fundamental mode having the smallest loss from a radiation coefficient ?v1 of a first higher order mode having the second smallest loss among the light amplified in the two-dimensional photonic-crystal layer, is 1 cm?1 or more.

Abstract: A photonic-crystal surface emitting laser includes a first semiconductor layer, a photonic crystal layer having a refractive index higher than a refractive index of the first semiconductor layer and provided on the first semiconductor layer, and an active layer provided opposite to the first semiconductor layer with respect to the photonic crystal layer. The photonic crystal layer has a first region and a plurality of second regions each having a refractive index different from a refractive index of the first region and periodically disposed in the first region in a plane of the photonic crystal layer. The second regions extend from the photonic crystal layer to the first semiconductor layer.

Abstract: A two-dimensional photonic-crystal laser includes: a substrate made of an n-type semiconductor; a p-type cladding layer on an upper side of the substrate made of a p-type semiconductor; an active layer on an upper side of the cladding layer; a two-dimensional photonic-crystal layer on an upper side of the active layer including a plate-shaped base body made of an n-type semiconductor wherein modified refractive index areas whose refractive index differs from the base body are arranged; a first tunnel layer between the substrate and cladding layer made of an n-type semiconductor having a carrier density higher than the substrate's; a second tunnel layer between the first tunnel and cladding layers, made of a p-type semiconductor having a carrier density higher than the p-type semiconductor layer's; a first electrode on a lower side of or in the substrate; and a second electrode on an upper side of the two-dimensional photonic-crystal layer.

Abstract: The 3D sensing system includes: a PC laser array in which PC laser elements are arranged on a plane; a control unit configured to control an operation mode of a laser light source; a driving unit configured to execute a drive control of the PC laser array in accordance with an operation mode controlled by the control unit; a light receiving unit configured to receive reflected light that is laser light emitted from the PC laser array and reflected from a measuring object; a signal processing unit configured to execute signal processing of the reflected light received by the light receiving unit in accordance with the operation mode; and a distance calculation unit configure to execute calculation processing of a distance to the measuring object with respect to a signal processed by the signal processing unit, in accordance with the operation mode, and to output distance data.

Abstract: A surface emitting laser element formed of a group III nitride semiconductor, comprising: a first clad layer of a first conductivity type; a first guide layer of the first conductivity type having a photonic crystal layer formed on the first clad layer including voids disposed having two-dimensional periodicity in a surface parallel to the layer and a first embedding layer formed on the photonic crystal layer; a second embedding layer formed on the first embedding layer by crystal growth; an active layer formed on the second embedding layer; a second guide layer formed on the active layer; and a second clad layer of a second conductivity type formed on the second guide layer, the second conductivity type being a conductivity type opposite to the first conductivity type. The first embedding layer has a surface including pits disposed at surface positions corresponding to the voids.

Abstract: The present invention provides a thermal radiation light source that allows a wider range of material choices than those of conventional techniques, so that light having a desired peak wavelength can easily be obtained. A thermal radiation light source 10 includes a thermo-optical converter made of an optical structure in which a refractive index distribution is formed in a member 11 made of an intrinsic semiconductor so as to resonate with light of a shorter wavelength than a wavelength corresponding to a bandgap of the intrinsic semiconductor. When heat is externally supplied to the thermo-optical converter, light having a spectrum in a band of shorter wavelengths than a cutoff wavelength is produced by interband absorption in the intrinsic semiconductor, and light of a resonant wavelength ?r in the wavelength band, the light causing resonance in the optical structure, is selectively intensified and emitted as thermal radiation light.

Abstract: A television (10) in accordance with an aspect of the present invention includes a display size calculating unit (135) and a video processing circuit (107) in order to adjust a display size of a main image and a display size of a sub-image so that the main image and the sub-image are displayed in different regions on an LCD (110). The display size calculating unit (135) adjusts, based on aspect ratios of the main image and the sub-image, a location at which the main image is displayed on the LCD (110) and a location at which the sub-image is displayed on the LCD (110).

Abstract: A thermal emission source that allows a wider range of material choices than those of conventional techniques, so that light having a desired peak wavelength can easily be obtained. A thermal emission source includes a thermo-optical converter composed of an optical structure in which a refractive index distribution is formed in a member made of an intrinsic semiconductor so as to resonate with light of a shorter wavelength than a wavelength corresponding to a bandgap of the intrinsic semiconductor. When heat is externally supplied to the thermo-optical converter, light having a spectrum in a band of shorter wavelengths than a cutoff wavelength is produced by interband absorption in the intrinsic semiconductor, and light of a resonant wavelength ?r in the wavelength band, the light causing resonance in the optical structure, is selectively intensified and emitted as thermal emission.

Abstract: A television (10) in accordance with an aspect of the present invention includes a display size calculating unit (135) and a video processing circuit (107) in order to adjust a display size of a main image and a display size of a sub-image so that the main image and the sub-image are displayed in different regions on an LCD (110). The display size calculating unit (135) adjusts, based on aspect ratios of the main image and the sub-image, a location at which the main image is displayed on the LCD (110) and a location at which the sub-image is displayed on the LCD (110).