Abstract: A semiconductor device includes a drift layer, a channel layer, a source layer being the first conductivity type, a gate layer, a body layer, a shield layer and a drain layer. The channel is disposed on the drift layer. The source layer is disposed on a surface layer portion of the channel layer. The gate layer is arranged to be deeper than the source layer. The body layer is arranged to be deeper than the source layer. The shield layer is disposed at a portion of the channel layer between the gate layer and the drift layer. The shield layer is maintained at a potential different from a potential of the gate layer. The drain layer is disposed at a side opposite to the channel layer. A depth ratio of a depth of the gate layer to a depth of the body layer is equal to or larger than 0.45.

Abstract: A method for manufacturing a semiconductor device having a junction field effect transistor, includes: preparing a substrate having a first conductivity type drift layer; forming a first conductivity type channel layer above the drift layer by an epitaxial growth, to thereby produce a semiconductor substrate; forming a second conductivity type gate layer within the channel layer by performing an ion-implantation; forming a second conductivity type body layer at a position separated from the gate layer within the channel layer by performing an ion-implantation; and forming a second conductivity type shield layer at a position that is to be located between the gate layer and the drift layer within the channel layer by performing an ion-implantation. The shield layer is formed to face the gate layer while being separated from the gate layer, and is kept to a potential different from that of the gate layer.

Abstract: A vibration output apparatus (1) includes a vibration transmission member (20), an acoustic vibration output unit (10), and a cushion (30). The vibration transmission member (20) is formed by integrating a body plate (21) and a support portion (22). The support portion (22) is in contact with a vibration plate (100) and supports the body plate (21). The body plate (21) has an opposite surface (21a) opposite to a vibration surface (100u) of the vibration plate (100) and forms an opposite space (S1) between the vibration surface (100u) and the opposite surface (21a). The acoustic vibration output unit (10) is disposed on a rear surface (21b) of the opposite surface (21a) of the body plate (21) and is configured to output an acoustic vibration. The support portion (22, 23) is not in contact with the cushion (30).

Abstract: A semiconductor device includes a JFET and a MOSFET cascode-connected to each other such that a source electrode of the JFET is connected to a drain electrode of the MOSFET. The JFET is configured such that a breakdown voltage between a gate layer and a body layer is set lower than a breakdown voltage of the MOSFET.

Abstract: A stereo camera apparatus includes a first imaging unit including a first imaging optical system provided with a plurality of lens groups, and a first actuator configured to change a focal length by driving at least one of the plurality of lens groups of the first imaging optical system; a second imaging unit including a second imaging optical system provided with a plurality of lens groups, and a second actuator configured to change a focal length by driving at least one of the plurality of lens groups of the second imaging optical system; a focal length controller configured to output synchronized driving signals to the first and second actuators; and an image processing unit configured to calculate a distance to a subject by using images captured by the first imaging unit and the second imaging unit.

Abstract: An object detection device is configured to execute a first process, a second process, and an object detection process (third and fourth processes). The first process estimates a shape of a road surface in a real space on the basis of a first disparity map. The first disparity map is generated on the basis of an output of a stereo camera that captures an image including the road surface, and is a map in which a disparity obtained from the output of the stereo camera is associated with two-dimensional coordinates formed by a first direction corresponding to a horizontal direction of the image captured by the stereo camera and a second direction intersecting the first direction. The second process removes from the first disparity map a disparity for which a height from the road surface in the real space corresponds to a predetermined range on the basis of the estimated shape of the road surface to generate a second disparity map.

Abstract: An object detection device is configured to execute a road surface detection process, an object disparity determination process, and an object detection process. The road surface detection process estimates a position of a road surface on the basis of a first disparity map. The first disparity map is generated on the basis of an output of a stereo camera and is a map in which a disparity is associated with two-dimensional coordinates formed by a first direction corresponding to a horizontal direction of an image captured by the stereo camera and a second direction intersecting the first direction. The object disparity determination process determines disparities as object disparities when the number of occurrences of each of the disparities for respective coordinate ranges in the first direction of the first disparity map exceeds a predetermined threshold corresponding to the disparity.

Abstract: A manufacturing method for a prosthetic apparatus for dental purpose according to one aspect of the present invention includes: acquiring scan data of a model that is a reproduction of at least a part of an inside of an oral cavity of a patient; creating shape data of a shaped body for dental purpose on a basis of the scan data; producing a shaped body on a basis of the shape data; covering at least a part of the shaped body and at least a part of a model with film, the shaped body attached to the model; releasing air in a part covered with the film to deform the film and bring the shaped body into close contact with the model; and curing the shaped body in a state where the shaped body is in close contact with the model.

Abstract: A vibration generation apparatus includes a concave frame, a vibrator, and a first damper. The frame has an opening in upper portion thereof. The vibrator is housed in the frame. The first damper is connected to the vibrator and the frame and is configured to hold the vibrator such that the vibrator is able to move in an up-down direction with respect to the frame. The first damper has a predetermined thickness. The first damper is in an N-shape in a side view and includes two bent portions and has an upper end mounted on an edge of the opening and a lower end mounted on a lower edge of the vibrator.

Abstract: An object detection device includes a processor. The processor acquires or generates a first disparity image generated on the basis of an output of a stereo camera mounted in a mobile object. In the first disparity image, pixels representing disparities are arranged on a two-dimensional plane formed by a first direction corresponding to a base-length direction of the stereo camera and a second direction intersecting the first direction. The processor approximates a relationship between a coordinate, in the second direction, of a road surface in a direction of travel of the mobile object and a disparity representing the road surface with two straight lines, the relationship being included in the first disparity image.

Abstract: A volume measurement apparatus comprises: a point group conversion part converting depth information from a depth sensor into point group data; a raw material heap detection part detecting a point group related to a raw material heap from the point group data, using repose angle information; and a raw material heap volume calculation part that calculates a volume of the raw material heap non-occlusion part based on the point group related to the raw material heap; estimates a volume of the raw material heap occlusion part in the raw material heap, using at least the point group related to the raw material heap; and calculates a volume of the raw material heap, which is a sum of the calculated volume of the raw material heap non-occlusion part and the estimated volume of the raw material heap occlusion part.

Abstract: To provide a dental porcelain paste which can maintain maintaining the paste state and have excellent application property for a long period of time and hardly causes carbonization or bubbles due to the influence of an organic component or a polymer component during firing. The present invention provides a dental porcelain paste for preparing a dental prosthesis device, comprising: 50.0 to 80.0 wt. % of a glass powder (a) having a maximum particle diameter of 100 ?m or less and an average particle diameter of 1 to 20 ?m, 0.5 to 10.0 wt. % of a hydrophobized fine particle silica (b) having an average primary particle diameter of 1 to 50 nm, and 10.0 to 49.5 wt. % of an organic solvent (c) having a boiling point it is within (bp) of 100 to 300° C.

Abstract: A semiconductor device with a junction type FET includes: a drift layer; a channel layer on the drift layer; a source layer in a surface portion of the channel layer; a gate layer in the channel layer; a body layer in the channel layer; a drain layer disposed on an opposite side of the source layer with respect to the drift layer; a gate wiring electrically connected to the gate layer; a first electrode electrically connected to the source layer and the body layer; and a second electrode electrically connected to the drain layer.

Abstract: A vibration generator that allows the user to feel sufficient vibration and that has excellent heat-releasing performance is provided. A vibration generator (100a) has a case (110), a shaft member (130) provided inside the case (110), a moving part (140) configured to move back and forth inside the case (110) along the shaft member (130), and a vibration transmission member (150) configured to have one end fixed to the case (110). The vibration transmission member (150) has an inner space S1 formed inside and an opening part (151) to connect between the inner space (S1) and the outside. An end part (133) of the shaft member (130) penetrates out from the inside of the case (110) and extends to the inner space (S1) of the vibration transmission member (150).

Abstract: Exposure to sunlight is minimized. A vibration generation device 1 includes a vibration generator that generates a vibration, and a vibration transmission member 4 that has a vehicle-side fixed part 30 to be fixed to a vehicle 50 and transmits to the vehicle 50 the vibration generated by the vibration generator, wherein the vehicle-side fixed part 30 is provided within a range R of the vibration generator, as viewed from the vibration direction of the vibration generator.

Abstract: A vibration generation apparatus includes a concave frame, a vibrator, and a first damper. The frame has an opening in upper portion thereof. The vibrator is housed in the frame. The first damper is connected to the vibrator and the frame and is configured to hold the vibrator such that the vibrator is able to move in an up-down direction with respect to the frame. The first damper has a predetermined thickness. The first damper is in an N-shape in a side view and includes two bent portions and has an upper end mounted on an edge of the opening and a lower end mounted on a lower edge of the vibrator.

Abstract: A method for manufacturing a semiconductor device having a junction field effect transistor, includes: preparing a substrate having a first conductivity type drift layer; forming a first conductivity type channel layer above the drift layer by an epitaxial growth, to thereby produce a semiconductor substrate; forming a second conductivity type gate layer within the channel layer by performing an ion-implantation; forming a second conductivity type body layer at a position separated from the gate layer within the channel layer by performing an ion-implantation; and forming a second conductivity type shield layer at a position that is to be located between the gate layer and the drift layer within the channel layer by performing an ion-implantation. The shield layer is formed to face the gate layer while being separated from the gate layer, and is kept to a potential different from that of the gate layer.

Abstract: A tactile sensation providing apparatus and method facilitate avoidance of the feeling of strangeness and includes a touch sensor, a load detection unit configured to detect a pressure load on a touch face of the touch sensor, a tactile sensation providing unit configured to provide a click sensation and a release sensation to the touch face, and a control unit configured to control that the tactile sensation providing unit. The click sensation is provided when detecting the pressure load satisfying a pressure load provided within a button object for providing the click sensation in a button object. The release sensation is provided when detecting the pressure load satisfying a pressure load provided within a button object for providing the release sensation in a button object.

Abstract: A semiconductor device includes a drift layer, a channel layer, a source layer being the first conductivity type, a gate layer, a body layer, a shield layer and a drain layer. The channel is disposed on the drift layer. The source layer is disposed on a surface layer portion of the channel layer. The gate layer is arranged to be deeper than the source layer. The body layer is arranged to be deeper than the source layer. The shield layer is disposed at a portion of the channel layer between the gate layer and the drift layer. The shield layer is maintained at a potential different from a potential of the gate layer. The drain layer is disposed at a side opposite to the channel layer. A depth ratio of a depth of the gate layer to a depth of the body layer is equal to or larger than 0.45.

Abstract: A semiconductor device includes: a first semiconductor chip including a junction-type FET; a second semiconductor chip including a MOSFET; and a junction-type FET adjustment resistor disposed between a gate electrode of the junction-type FET and a source electrode of the MOSFET. The junction type FET and the MOSFET are cascode-connected. The junction-type FET adjustment resistor includes a first resistance circuit for a switching on operation and a second resistance circuit for a switching off operation.