Abstract: A semiconductor laser element and a protective wall surrounding the element are provided on the surface of a metal frame of a semiconductor laser device. Circumferential portions are provided on an outer periphery of the metal frame for rotating the optical axis of light originating from a light-emitting point of the semiconductor laser element to a direction along the surface of the metal frame. By way of a guide of an optical pickup base corresponding to the circumferential portions, the semiconductor laser device is mounted on the optical pickup base.

Abstract: A semiconductor laser apparatus includes a base, a block, and a semiconductor laser element. The base has a recess on a main plane thereof. The block is perpendicularly elongating on the main plane. The block is neighboring the recess. The semiconductor laser element is mounted on a side of the block. A first end of the semiconductor element is located on outer side of the recess, and a second end of the semiconductor element is located on inner side of the recess.

Abstract: Provide a discrete semiconductor device, particularly a discrete semiconductor device for small signal operation with a smaller packaging area and has excellent high frequency characteristics and good heat dissipation performance, and a method for producing the same. The discrete semiconductor elements are mounted on die bond pads and wire bond pads with the packaging surface being sealed with a resin, and connecting the back faces of the die bond pads and the wire bond pads directly to a mother board.

Abstract: A semiconductor laser apparatus includes a base, a block, and a semiconductor laser element. The base has a recess on a main plane thereof. The block is perpendicularly elongating on the main plane. The block is neighboring the recess. The semiconductor laser element is mounted on a side of the block. A first end of the semiconductor element is located on outer side of the recess, and a second end of the semiconductor element is located on inner side of the recess.

Abstract: A semiconductor laser element and a protective wall surrounding the element are provided on the surface of a metal frame of a semiconductor laser device. Circumferential portions are provided on an outer periphery of the metal frame for rotating the optical axis of light originating from a light-emitting point of the semiconductor laser element to a direction along the surface of the metal frame. By way of a guide of an optical pickup base corresponding to the circumferential portions, the semiconductor laser device is mounted on the optical pickup base.

Abstract: A semiconductor device including at least one die bond pad; at least one semiconductor element mounted on the at least one die bond pad; a plurality of substantially parallel wire bond pads connected to electrodes of the at least one semiconductor element, and disposed substantially in parallel to the at least one die bond pad in a longitudinal direction; and a sealing resin configured to mold the at least one semiconductor element, wherein back surfaces of the at least one die bond pad and the plurality of parallel wire bond pads are free from the sealing resin.

Abstract: Providing a method of producing a semiconductor device wherein semiconductor element are sealed with a resin by using the same lead and other means regardless of the specifications of the semiconductor elements, and a semiconductor device which can be reduced in size and weight and has good heat dissipation performance and high-frequency performance. The semiconductor devices can be produced by mounting a plurality of the semiconductor elements on the lead frame having leads disposed substantially parallel to each other, sealing the whole with a resin, and cutting off the individual semiconductor devices.

Abstract: Providing a method of producing a semiconductor device wherein semiconductor element are sealed with a resin by using the same lead and other means regardless of the specifications of the semiconductor elements, and a semiconductor device which can be reduced in size and weight and has good heat dissipation performance and high-frequency performance.

Abstract: Providing a method of producing a semiconductor device wherein semiconductor element are sealed with a resin by using the same lead and other means regardless of the specifications of the semiconductor elements, and a semiconductor device which can be reduced in size and weight and has good heat dissipation performance and high-frequency performance.

Abstract: A semiconductor device which includes a semiconductor chip mounted on a die pad having first and second surfaces opposite to each other with the semiconductor chip mounted on the first surface, and one or a plurality of electrode terminals having third and fourth surfaces opposite to each other and spaced a distance from the die pad and electrically connected with the semiconductor chip through a corresponding wire with the wire being connected to the third surface. Further, a sealing resin encloses the die pad and the electrode terminal. A surface of the die pad opposite to the surface on which the second and fourth surfaces of the die pad and the electrode terminal, respectively, is exposed to an outside of the sealing resin.

Abstract: Providing a method of producing a semiconductor device wherein semiconductor element are sealed with a resin by using the same lead and other means regardless of the specifications of the semiconductor elements, and a semiconductor device which can be reduced in size and weight and has good heat dissipation performance and high-frequency performance. The semiconductor devices can be produced by mounting a plurality of the semiconductor elements on the lead frame having leads disposed substantially parallel to each other, sealing the whole with a resin, and cutting off the individual semiconductor devices.

Abstract: A semiconductor device which includes a semiconductor chip mounted on a die pad having first and second surfaces opposite to each other with the semiconductor chip mounted on the first surface, and one or a plurality of electrode terminals having third and fourth surfaces opposite to each other and spaced a distance from the die pad and electrically connected with the semiconductor chip through a corresponding wire with the wire being connected to the third surface. Further, a sealing resin encloses the die pad and the electrode terminal. A surface of the die pad opposite to the surface on which the second and fourth surfaces of the die pad and the electrode terminal, respectively, is exposed to an outside of the sealing resin.

Abstract: Provide a discrete semiconductor device, particularly a discrete semiconductor device for small signal operation with a smaller packaging area and has excellent high frequency characteristics and good heat dissipation performance, and a method for producing the same. The discrete semiconductor elements are mounted on die bond pads and wire bond pads with the packaging surface being sealed with a resin, and connecting the back faces of the die bond pads and the wire bond pads directly to a mother board.