Abstract: An information processing apparatus includes a processor that detects positions of ball candidates from a plurality of time-series image frames. The processor adds a position of a second ball candidate to a second image frame subsequent to a first image frame based on a position of a first ball candidate and movement definition information. The first ball candidate is detected from the first image frame. The movement definition information defines a characteristic of a movement of a ball. The processor generates a plurality of trajectory candidates by combining a plurality of ball candidates detected from image frames of different times. The processor evaluates the plurality of trajectory candidates to determine a ball trajectory. The processor interpolates, when the ball trajectory is interrupted, between a starting point and an ending point of the interruption with a trajectory of a first person who moves from the starting point to the ending point.

Abstract: An information processing apparatus includes a processor that detects positions of ball candidates from a plurality of time-series image frames. The processor adds a position of a second ball candidate to a second image frame subsequent to a first image frame based on a position of a first ball candidate and movement definition information. The first ball candidate is detected from the first image frame. The movement definition information defines a characteristic of a movement of a ball. The processor generates a plurality of trajectory candidates by combining a plurality of ball candidates detected from image frames of different times. The processor evaluates the plurality of trajectory candidates to determine a ball trajectory. The processor interpolates, when the ball trajectory is interrupted, between a starting point and an ending point of the interruption with a trajectory of a first person who moves from the starting point to the ending point.

Abstract: A nitride semiconductor light-emitting device having an optical waveguide includes, in the following order, at least: a first cladding layer; an active layer; and a second cladding layer, wherein the second cladding layer includes (i) a transparent conductive layer comprising a transparent conductor and (ii) a nitride semiconductor layer comprising a nitride semiconductor, the nitride semiconductor layer being formed closer to the active layer than the transparent conductive layer.

Abstract: A wavelength conversion element disclosed in the present application includes a phosphor layer including a plurality of phosphor particles and a matrix that is located among the plurality of phosphor particles and is formed of zinc oxide. The zinc oxide is columnar crystals or a single crystal in a c-axis orientation.

Abstract: A wavelength conversion element includes: a plurality of phosphor particles; a first matrix located among a part of the plurality of phosphor particles and formed of zinc oxide in a c-axis orientation; and a second matrix located among a remaining part of the plurality of phosphor particles and formed of a material having a refractive index that is lower than a refractive index of the zinc oxide.

Abstract: A wavelength conversion element includes: a plurality of phosphor particles; a first matrix located among a part of the plurality of phosphor particles and formed of zinc oxide in a c-axis orientation; and a second matrix located among a remaining part of the plurality of phosphor particles and formed of a material having a refractive index that is lower than a refractive index of the zinc oxide.

Abstract: A wavelength conversion element disclosed in the present application includes a phosphor layer including a plurality of phosphor particles and a matrix that is located among the plurality of phosphor particles and is formed of zinc oxide. The zinc oxide is columnar crystals or a single crystal in a c-axis orientation.

Abstract: A superluminescent diode has, above a substrate, a layered portion including at least a first cladding layer, a luminescent layer, and a second cladding layer in this order, and an optical waveguide having a refractive-index guiding structure is provided in the layered portion. The optical waveguide includes: a first mesa portion formed by processing the second cladding layer into the first mesa portion having a first width; and a second mesa portion formed by processing the first cladding layer, the luminescent layer, and the second cladding layer into the second mesa portion having a second width greater than the first width.

Abstract: A nitride semiconductor light-emitting device having an optical waveguide includes, in the following order, at least: a first cladding layer; an active layer; and a second cladding layer, wherein the second cladding layer includes (i) a transparent conductive layer comprising a transparent conductor and (ii) a nitride semiconductor layer comprising a nitride semiconductor, the nitride semiconductor layer being formed closer to the active layer than the transparent conductive layer.

Abstract: A semiconductor light-emitting element includes: a substrate; a semiconductor stacked film including a first cladding layer of a first conductivity type formed on the substrate, a light-emitting layer formed on the first cladding layer, and a second cladding layer of a second conductivity type formed on the light-emitting layer, and having an optical waveguide; a first electrode formed so as to be electrically connected to the first cladding layer; and a second electrode formed so as to be electrically connected to the second cladding layer. The light-emitting layer generates guided light that is guided in the optical waveguide, and non-guided light that is not guided in the optical waveguide, and the non-guided light is emitted from one of the substrate side and the semiconductor stacked layer side to the outside.

Abstract: A semiconductor light-emitting element includes: a substrate; and a nitride semiconductor multilayer film provided on an upper surface of the substrate and including an active layer. A recess, a stepped portion, or a protruding portion is formed in an active layer or a layer that contacts a lower surface of the active layer. A ridge stripe, which has a front end facet and a rear end facet and serves as an optical waveguide, is formed in an upper part of the nitride semiconductor multilayer film. The distance from a lateral center of the ridge stripe to a lateral center of the recess, the stepped portion, or the protruding portion changes continuously or in stages from the front end facet toward the rear end facet. Bandgap energy of the active layer changes continuously or in stages from the front end facet toward the rear end facet.

Abstract: A nitride semiconductor device includes a multilayer semiconductor structure made of a group III nitride semiconductor and having a light-emitting facet, and a first coating film formed to cover the light-emitting facet of the multilayer semiconductor structure. The first coating film is a crystalline film made of a nitride containing aluminum. The crystalline film is composed of a group of single domains, and the single domain is comprised of a group of grains whose crystal orientation planes have a same inclination angle and a same rotation angle. A length of a boundary between the domains per unit area is 7 ?m?1 or less.

Abstract: A semiconductor light-emitting element includes: a substrate; and a nitride semiconductor multilayer film provided on an upper surface of the substrate and including an active layer. A recess, a stepped portion, or a protruding portion is formed in an active layer or a layer that contacts a lower surface of the active layer. A ridge stripe, which has a front end facet and a rear end facet and serves as an optical waveguide, is formed in an upper part of the nitride semiconductor multilayer film. The distance from a lateral center of the ridge stripe to a lateral center of the recess, the stepped portion, or the protruding portion changes continuously or in stages from the front end facet toward the rear end facet. Bandgap energy of the active layer changes continuously or in stages from the front end facet toward the rear end facet.

Abstract: A nitride semiconductor device includes a multilayer semiconductor structure made of a group III nitride semiconductor and having a light-emitting facet, and a first coating film formed to cover the light-emitting facet of the multilayer semiconductor structure. The first coating film is a crystalline film made of a nitride containing aluminum. The crystalline film is composed of a group of single domains, and the single domain is comprised of a group of grains whose crystal orientation planes have a same inclination angle and a same rotation angle. A length of a boundary between the domains per unit area is 7 ?m?1 or less.

Abstract: A semiconductor light-emitting device includes a semiconductor multilayer (25) including a cavity structure having two facets facing each other, and a first protective film (23a) formed on at least one of the two facets and of metal nitride. The metal nitride contains aluminum and nitrogen as main components, and at least one of yttrium and lanthanum.

Abstract: Projections/depressions forming a two-dimensional periodic structure are formed in a surface of a semiconductor multilayer film opposing the principal surface thereof, while a metal electrode with a high reflectivity is formed on the other surface. By using the diffracting effect of the two-dimensional periodic structure, the efficiency of light extraction from the surface formed with the projections/depressions can be improved. By reflecting light emitted toward the metal electrode to the surface formed with the projections/depressions by using the metal electrode with the high reflectivity, the foregoing effect achieved by the two-dimensional periodic structure can be multiplied.

Abstract: A semiconductor light-emitting device includes: a substrate; a plurality of semiconductor layers grown on the substrate and including an active layer; and an electrode formed on the semiconductor layers. An opening in which at least a portion of the semiconductor layers is exposed is formed in the substrate. The electrode faces the opening in the substrate and a portion of the substrate surrounding the opening.

Abstract: Projections/depressions forming a two-dimensional periodic structure are formed in a surface of a semiconductor multilayer film opposing the principal surface thereof, while a metal electrode with a high reflectivity is formed on the other surface. By using the diffracting effect of the two-dimensional periodic structure, the efficiency of light extraction from the surface formed with the projections/depressions can be improved. By reflecting light emitted toward the metal electrode to the surface formed with the projections/depressions by using the metal electrode with the high reflectivity, the foregoing effect achieved by the two-dimensional periodic structure can be multiplied.

Abstract: A nitride semiconductor light emitting device includes a substrate formed of silicon, an insulating film formed on the substrate and a single crystal thin film formed on the insulating film. On the single crystal film, a semiconductor laminated body including a light emitting layer of nitride semiconductor is formed.

Abstract: A decoding device comprises a cache memory for temporally storing video image data, a unit for determining a position of a reference macroblock corresponding to macroblock to be decoded based on a motion vector obtained by analyzing an encoded bitstream, and a unit for determining whether or not a reference macroblock includes a cacheline boundary when data of the reference macroblock is not stored in the memory and for specifying the position of the boundary as a front address for the data preload from a memory storing the data of the reference macroblock.