Abstract: A biological information measurement device adapted to be attached on an upper arm of a human body and used thereon includes a belt portion adapted to be wound around the upper arm, electrocardiographic measurement means including a plurality of electrodes for detecting an electrocardiographic signal of the human body, pulse wave measurement means including a pulse wave sensor for detecting a pulse wave of the human body, heartbeat vibration measurement means including a vibration sensor for detecting vibration caused by beating of a heart of the human body, and an analysis processing unit configured to calculate a pre-ejection time and a pulse transit time of the heart based on time series data of the electrocardiographic signal, time series data of the pulse wave, and time series data of the vibration caused by the beating of the heart.

Abstract: A biological information measurement device includes a sensor unit that detects predetermined biological information related to an organ of a living body, an A/D conversion unit that converts a measurement signal output from the sensor unit into a digital signal, a storage unit that stores information including a digital signal related to the measurement signal output from the A/D conversion unit, an analysis processing unit that determines presence or absence of a suspicion of an abnormality in the organ by analyzing the digital signal, and a measurement control unit that changes a sampling frequency related to A/D conversion of the measurement signal under a predetermined condition when the analysis processing unit has determined that a suspicion of an abnormality is present in the organ.

Abstract: A transport system includes a sensor to sense surroundings of a working machine configured to perform automatic operation, the sensor being provided in or on the working machine, a transport determiner configured or programmed to determine whether it is possible to load the working machine onto and/or unload the working machine from a transport vehicle based on the surroundings of the working machine sensed by the sensor. The transport system includes a communication device provided in or on the working machine and configured or programmed to transmit information relating to loading and/or unloading of the working machine onto and/or from the transport vehicle.

Abstract: A magnetic laminate having further suppressed magnetic saturation and higher DC superposition characteristics, a magnetic structure including the same, and an electronic component including the magnetic laminate or the magnetic structure. A magnetic laminate in which magnetic metal layers and non-magnetic metal layers are alternately laminated, wherein the non-magnetic metal layer is disposed between the magnetic metal layers; the magnetic metal layer contains an amorphous material; and the non-magnetic metal layer contains at least one element selected from the group consisting of Cr, Ru, Rh, Ir, Re, and Cu, and has an average thickness of 0.4 nm or more and 1.5 nm or less (i.e., from 0.4 nm to 1.5 nm).

Abstract: A sintered magnet contains Sm—Fe—N-based crystal grains and has high coercivity; and a magnetic powder is capable of forming a sintered magnet without lowering the coercivity even if heat is generated in association with the sintering. A sintered magnet comprises a crystal phase composed of a plurality of Sm—Fe—N-based crystal grains and a nonmagnetic metal phase present between the Sm—Fe—N crystal grains adjacent to each other, wherein a ratio of Fe peak intensity IFe to SmFeN peak intensity ISmFeN measured by an X-ray diffraction method is 0.2 or less. A magnetic powder comprises Sm—Fe—N-based crystal particles and a nonmagnetic metal layer covering surfaces of the Sm—Fe—N crystal particles.

Abstract: A soft magnetic metal powder includes a coated particle having a soft magnetic metal particle and a coating layer coating a surface of the soft magnetic metal particle. The coating layer contains at least one compound selected from the group consisting of molybdenum disulfide, molybdenum oxide, boron nitride, mica, talc, pyrophyllite, and kaolinite.

Abstract: A coated soft magnetic alloy particle includes a soft magnetic alloy particle containing an amorphous phase, and a first film containing at least one compound selected from the group consisting of an inorganic compound having a hexagonal, trigonal, or monoclinic crystal structure and a layered silicate mineral. The first film coats a surface of the soft magnetic alloy particle, and an outer peripheral contour of a section of the coated soft magnetic alloy particle has an average smoothness ?_ave of 0.92 or more and 1.00 or less (i.e., from 0.92 or more and 1.00).

Abstract: A magnetic laminate having further suppressed magnetic saturation and higher DC superposition characteristics, a magnetic structure including the same, and an electronic component including the magnetic laminate or the magnetic structure. A magnetic laminate in which magnetic metal layers and non-magnetic metal layers are alternately laminated, wherein the non-magnetic metal layer is disposed between the magnetic metal layers; the magnetic metal layer contains an amorphous material; and the non-magnetic metal layer contains at least one element selected from the group consisting of Cr, Ru, Rh, Ir, Re, and Cu, and has an average thickness of 0.4 nm or more and 1.5 nm or less (i.e., from 0.4 nm to 1.5 nm).

Abstract: A sintered magnet contains Sm—Fe—N-based crystal grains and has high coercivity; and a magnetic powder is capable of forming a sintered magnet without lowering the coercivity even if heat is generated in association with the sintering. A sintered magnet comprises a crystal phase composed of a plurality of Sm—Fe—N-based crystal grains and a nonmagnetic metal phase present between the Sm—Fe—N crystal grains adjacent to each other, wherein a ratio of Fe peak intensity IFe to SmFeN peak intensity ISmFeN measured by an X-ray diffraction method is 0.2 or less. A magnetic powder comprises Sm—Fe—N-based crystal particles and a nonmagnetic metal layer covering surfaces of the Sm—Fe—N crystal particles.

Abstract: An elastic wave device includes a piezoelectric substrate and an interdigital transducer electrode. The piezoelectric substrate includes a principal surface with a groove tapered in lateral cross section. The interdigital transducer electrode is arranged on the principal surface such that at least one portion thereof is located in the groove. The interdigital transducer electrode is a laminate including a first conductive layer, a second conductive layer, and a diffusion-preventing layer located between the first conductive layer and the second conductive layer and made of an oxide or nitride of Ti or Cr.

Abstract: A surface acoustic wave device includes a piezoelectric substrate, an interdigital transducer (IDT) electrode, and a connecting portion that is electrically connected with the IDT electrode. The surface acoustic wave device further includes a wiring portion, a portion of which is disposed on the connecting portion, and a bump disposed on the wiring portion. The connecting portion includes a comb-shaped portion at an end of the connecting portion on which the wiring portion is disposed.

Abstract: A surface acoustic wave device includes a surface acoustic wave element, a packaging case, and a packaging electrode. The surface acoustic wave element has a piezoelectric substrate, an interdigital transducer, an electrode pad, an intermediate electrode, an upper electrode, and a bump electrode. The intermediate electrode is preferably made of NiCr including about 15 to about 30 weight percent of Cr. The electrode pad and upper electrode are made of Al. The bump electrode is press-bonded to the packaging electrode with an ultrasonic wave or heat applied to the bump electrode. The resulting surface acoustic wave device has excellent characteristics and the surface acoustic wave element is not removed or peeled from the packaging case during a drop test.

Abstract: A surface acoustic wave device includes a piezoelectric substrate, an interdigital transducer (IDT) electrode, and a connecting portion that is electrically connected with the IDT electrode. The surface acoustic wave device further includes a wiring portion, a portion of which is disposed on the connecting portion, and a bump disposed on the wiring portion. The connecting portion includes a comb-shaped portion at an end of the connecting portion on which the wiring portion is disposed.

Abstract: Methods of forming a resist pattern, of forming an electrode pattern, and of manufacturing a surface acoustic wave device are provided. The resist-pattern- and the electrode-pattern-forming methods each comprise a step of forming an antireflection film for preventing ultraviolet light from diffusely reflecting to a transparent substrate. The antireflection film is formed with a semiconductor having a band gap energy of 3.4 eV or less. The reflectance is expressed by (n1−n2)2/(n1+n2)2 is 0.15 or less, wherein n1 and n2 is the refractive indexes of the substrate and the antireflection film, respectively. The resist-pattern- and the electrode-pattern-forming methods with simple processes can achieve high-quality, reliable resist patterns and electrode patterns.

Abstract: A method of forming an electrode pattern of a surface acoustic wave device easily and reliably prevents the occurrence of an abnormality in the shape of a resist pattern. In the electrode pattern forming method, a resist layer is formed on a top surface of a piezoelectric substrate, and then exposed to ultraviolet rays through a photomask provided above the top surface of the piezoelectric substrate to form a resist pattern on the surface of the piezoelectric substrate. Furthermore, a conductor film is formed on the top surface of the piezoelectric substrate, and the resist pattern is removed by a liftoff method to form an electrode pattern of the surface acoustic wave device. Exposure is performed using ultraviolet rays having a wavelength which is completely absorbed into the piezoelectric substrate without reaching the bottom surface of the piezoelectric substrate.

Abstract: A surface acoustic wave device includes a piezoelectric substrate, a first surface acoustic wave element having at least one interdigital transducer on the piezoelectric substrate, a second surface acoustic wave element having at least one interdigital transducer which is provided on the piezoelectric substrate. The at least one interdigital transducer of the second surface acoustic wave element has a thickness that is different from the interdigital transducer of the first surface acoustic wave element, and the second surface acoustic wave element has a frequency characteristic that is different from that of the first surface acoustic wave element. An insulating film is applied to the first and second surface acoustic wave elements. A thickness of the insulating film at a region on the first surface acoustic wave element is different from the thickness of a region on the second surface acoustic wave.

Abstract: A method of forming an electrode pattern of a surface acoustic wave device easily and reliably prevents the occurrence of an abnormality in the shape of a resist pattern. In the electrode pattern forming method, a resist layer is formed on a top surface of a piezoelectric substrate, and then exposed to ultraviolet rays through a photomask provided above the top surface of the piezoelectric substrate to form a resist pattern on the surface of the piezoelectric substrate. Furthermore, a conductor film is formed on the top surface of the piezoelectric substrate, and the resist pattern is removed by a liftoff method to form an electrode pattern of the surface acoustic wave device. Exposure is performed using ultraviolet rays having a wavelength which is completely absorbed into the piezoelectric substrate without reaching the bottom surface of the piezoelectric substrate.

Abstract: A process selection system and method enable the automatic control of the specification to equipment most suitable for each lot. Processing using this specific equipment can be performed by further selecting the most suitable equipment from equipment used for the product type. Since a plurality of equipment can be specified for each lot, the equipment can be specified from an equipment group having these plurality of equipment. The adequate number of products in process for each equipment-specific process equipment id can be calculated based on the distribution percentage ri. The equipment-specific process equipment having the maximum value of the differential Gi between the adequate number of products in process ni and the collected actual number of products in process can be determined as the equipment-specific process equipment for the lot.

Abstract: A surface acoustic wave device includes a piezoelectric substrate, a first surface acoustic wave element having at least one interdigital transducer on the piezoelectric substrate, a second surface acoustic wave element having at least one interdigital transducer which is provided on the piezoelectric substrate. The at least one interdigital transducer of the second surface acoustic wave element has a thickness that is different from the interdigital transducer of the first surface acoustic wave element, and the second surface acoustic wave element has a frequency characteristic that is different from that of the first surface acoustic wave element. An insulating film is applied to the first and second surface acoustic wave elements. A thickness of the insulating film at a region on the first surface acoustic wave element is different from the thickness of a region on the second surface acoustic wave.