Abstract: A cell picking device includes a sucker having a pipette tip attached to a tip portion of the sucker and is used to suck the cell from a tip of the pipette tip, a driver configured to cause the sucker to perform a suction operation and move the sucker in a horizontal-plane direction and an axial direction of the pipette tip with the sucker inclined with respect to a vertical direction. A controller moves the sucker such that the tip of the pipette tip moves in a horizontal direction while being in contact with a bottom surface of the container installed on the sample mounting stage in a predetermined position on the sample mounting stage to desorb a cell arranged in the predetermined position from the bottom surface of the container, and suck the cell desorbed from the bottom surface of the container from the tip of the pipette tip.

Abstract: A trench is formed on a semiconductor substrate with a first insulation film patterned on the semiconductor substrate as a mask; a second insulation film is embedded in the trench and flattened; an upper portion of the first insulation film is selectively removed, and a part of a side face of the second insulation film is exposed; a part of the second insulation film is isotropically removed; a lower portion of the remaining first insulation film is selectively removed; and then a part of the remaining second insulation film is further isotropically removed so that an upper face of the second insulation film is at a predetermined height from a surface of the semiconductor substrate, a taper having a minimum taper angle of 90° or more is formed on the side face of the second insulation film, and a STI is formed.

Abstract: A trench is formed on a semiconductor substrate with a first insulation film patterned on the semiconductor substrate as a mask; a second insulation film is embedded in the trench and flattened; an upper portion of the first insulation film is selectively removed, and a part of a side face of the second insulation film is exposed; a part of the second insulation film is isotropically removed; a lower portion of the remaining first insulation film is selectively removed; and then a part of the remaining second insulation film is further isotropically removed so that an upper face of the second insulation film is at a predetermined height from a surface of the semiconductor substrate, a taper having a minimum taper angle of 90° or more is formed on the side face of the second insulation film, and a STI is formed.

Abstract: A trench is formed on a semiconductor substrate with a first insulation film patterned on the semiconductor substrate as a mask; a second insulation film is embedded in the trench and flattened; an upper portion of the first insulation film is selectively removed, and a part of a side face of the second insulation film is exposed; a part of the second insulation film is isotropically removed; a lower portion of the remaining first insulation film is selectively removed; and then a part of the remaining second insulation film is further isotropically removed so that an upper face of the second insulation film is at a predetermined height from a surface of the semiconductor substrate, a taper having a minimum taper angle of 90° or more is formed on the side face of the second insulation film, and a STI is formed.

Abstract: A method of supplying positive temperature coefficient thermistor elements in which a plurality of positive temperature coefficient thermistor elements 1 are divided into groups G.sub.1 to G.sub.8 for each range of predetermined resistance values, two arbitrary positive temperature coefficient thermistor elements are taken out of one of the groups G.sub.1 to G.sub.8 and supplied as one set of positive temperature coefficient thermistor elements.

Abstract: A positive temperature coefficient thermistor element comprising a plate-shaped ceramic body made of a ceramic material whose Curie temperature is in the range of 60.degree. to 120.degree. C., and having a thickness of 2.5 to 5.0 mm, and electrodes formed on both major surfaces of the ceramic body.

Abstract: A terminal for telegraph and telephone systems using as an overvoltage/overcurrent protecting component a positive temperature coefficient thermistor element comprising a plate-shaped ceramic body made of a ceramic material whose Curie temperature is in the range of 60.degree. to 120.degree. C., and having a thickness of 2.5 to 5.0 mm, and electrodes formed on both major surfaces of the ceramic body.