Abstract: The present technology includes: a substrate, a stepped structure being formed on one surface of the substrate, the stepped structure having a stepped surface having a different height from the one surface; and a coating layer that continuously covers the stepped structure and the one surface on a periphery of the stepped structure and causes light to be transmitted therethrough or reflects the light.

Abstract: To provide a semiconductor device and a method of manufacturing the semiconductor device capable of maintaining reliability even in a case where a structure is complicated. A semiconductor device includes at least one or more openings in a principal surface of a stacked layer structure, in which a planar shape of the opening in the principal surface includes an angular region protruding from the other region of the planar shape and including a bending point in an outer shape.

Abstract: The present disclosure relates to a circuit board, a semiconductor device, an imaging device, a solid-state image sensor, a method for manufacturing a solid-state image sensor, and an electronic apparatus that suppress a decrease in characteristics and a yield. A step portion formed on a substrate surface is configured in a divided state. With this configuration, a photoresist liquid dropped in a lithography process flows through a gap between the divided step portions so that the photoresist liquid uniformly flows on an imaging surface, whereby a decrease in characteristics and a yield due to application unevenness can be suppressed. The present disclosure can be applied to a solid-state image sensor.

Abstract: The present disclosure relates to a circuit board, a semiconductor device, an imaging device, a solid-state image sensor, a method for manufacturing a solid-state image sensor, and an electronic apparatus that suppress a decrease in characteristics and a yield. A step portion formed on a substrate surface is configured in a divided state. With this configuration, a photoresist liquid dropped in a lithography process flows through a gap between the divided step portions so that the photoresist liquid uniformly flows on an imaging surface, whereby a decrease in characteristics and a yield due to application unevenness can be suppressed. The present disclosure can be applied to a solid-state image sensor.

Abstract: A method of manufacturing a solid state imaging device having a photo-electric conversion portion array and a transfer electrode array, these arrays being provided in parallel to each other, upper surfaces and side wall surfaces of the transfer electrode array being covered with a light-shielding layer, and a transparent layer showing an oxidizing property at the time of film formation, the transparent layer being formed on the photo-electric conversion parts and the light-shielding layer.

Abstract: A manufacturing method of a semiconductor device includes the steps of: forming first and second alignment marks by forming first and second alignment mark grooves on a first surface of a semiconductor substrate and filling the grooves with a material different from the semiconductor substrate; forming a first element on the first surface in alignment using the first alignment mark; bonding a support substrate to the first surface; reversing a bonded structure of the support substrate and the semiconductor substrate around a predetermined axis and thinning the semiconductor substrate from a second surface side of the semiconductor substrate at least until a thickness with which a position of the second alignment mark is detected by reflected light obtained by application of alignment light from the second surface side of the semiconductor substrate is obtained; and forming a second element on the second surface in alignment using the second alignment mark.

Abstract: A method of manufacturing a solid state imaging device having a photo-electric conversion portion array and a transfer electrode array, these arrays being provided in parallel to each other, upper surfaces and side wall surfaces of the transfer electrode array being covered with a light-shielding layer, and a transparent layer showing an oxidizing property at the time of film formation, the transparent layer being formed on the photo-electric conversion parts and the light-shielding layer.

Abstract: A method of manufacturing a solid state imaging device having a photo-electric conversion portion array and a transfer electrode array, these arrays being provided in parallel to each other, upper surfaces and side wall surfaces of the transfer electrode array being covered with a light-shielding layer, and a transparent layer showing an oxidizing property at the time of film formation, the transparent layer being formed on the photo-electric conversion parts and the light-shielding layer.

Abstract: A method of manufacturing a solid state imaging device having a photo-electric conversion portion array and a transfer electrode array, these arrays being provided in parallel to each other, upper surfaces and side wall surfaces of the transfer electrode array being covered with a light-shielding layer, and a transparent layer showing an oxidizing property at the time of film formation, the transparent layer being formed on the photo-electric conversion parts and the light-shielding layer.

Abstract: A manufacturing method of a semiconductor device includes the steps of: forming first and second alignment marks by forming first and second alignment mark grooves on a first surface of a semiconductor substrate and filling the grooves with a material different from the semiconductor substrate; forming a first element on the first surface in alignment using the first alignment mark; bonding a support substrate to the first surface; reversing a bonded structure of the support substrate and the semiconductor substrate around a predetermined axis and thinning the semiconductor substrate from a second surface side of the semiconductor substrate at least until a thickness with which a position of the second alignment mark is detected by reflected light obtained by application of alignment light from the second surface side of the semiconductor substrate is obtained; and forming a second element on the second surface in alignment using the second alignment mark.

Abstract: A method of manufacturing a solid state imaging device having a photo-electric conversion portion array and a transfer electrode array, these arrays being provided in parallel to each other, upper surfaces and side wall surfaces of the transfer electrode array being covered with a light-shielding layer, and a transparent layer showing an oxidizing property at the time of film formation, the transparent layer being formed on the photo-electric conversion parts and the light-shielding layer.

Abstract: The present invention provides a coil structure capable of improving a differential transmission characteristic by reducing capacitance as much as possible. A common mode choke coil is constructed so that a section of each of two coil patterns constructing a thin film coil has an inverted trapezoid shape which is bilaterally asymmetrical. Because of the structural characteristic that the section of each of the two coil patterns has an inverted trapezoid shape which is bilaterally asymmetrical, the facing area of the two coil patterns contributing to capacitance is minimized. Thus, the capacitance of the thin film coil can be reduced as much as possible.

Abstract: A method of manufacturing a solid state imaging device having a photo-electric conversion portion array and a transfer electrode array, these arrays being provided in parallel to each other, upper surfaces and side wall surfaces of the transfer electrode array being covered with a light-shielding layer, and a transparent layer showing an oxidizing property at the time of film formation, the transparent layer being formed on the photo-electric conversion parts and the light-shielding layer.

Abstract: A plating underlayer is formed on an insulating film. An anti-reflection film is formed on the plating underlayer. A photoresist is formed over the antireflection film 62. The photoresist and the antireflection film are exposed and developed to form a resistframe made thereof. A second magnetic layer is formed within an inner pattern enclosed by the resistframe. The anti-reflection film is made of a material soluble for a developer through exposure.

Abstract: The present invention provides a coil structure capable of improving a differential transmission characteristic by reducing capacitance as much as possible. A common mode choke coil is constructed so that a section of each of two coil patterns constructing a thin film coil has an inverted trapezoid shape which is bilaterally asymmetrical. Because of the structural characteristic that the section of each of the two coil patterns has an inverted trapezoid shape which is bilaterally asymmetrical, the facing area of the two coil patterns contributing to capacitance is minimized. Thus, the capacitance of the thin film coil can be reduced as much as possible.

Abstract: A plating underlayer is formed on an insulating film. An anti-reflection film is formed on the plating underlayer. A photoresist is formed over the antireflection film 62. The photoresist and the antireflection film are exposed and developed to form a resistframe made thereof. A second magnetic layer is formed within an inner pattern enclosed by the resistframe. The anti-reflection film is made of a material soluble for a developer through exposure.