Patents by Inventor Kenji Yagishita

Kenji Yagishita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Turn off type semiconductor device, method of producing the same and the power conversion apparatus employing the same
    Patent number: 5324967
    Abstract: In a turn off type semiconductor device, an n-type emitter layer is divided into a plurality of elements by trenches. A silicide layer of a high melting point metal is provided on a p-type layer adjacent to the individual elements of the n-type emitter layer on a bottom of each of the trenches. A gate electrode is provided on the associated silicide layer so as to surround the plurality of elements of the n-type emitter layer obtained by the division of the emitter layer. An insulator is filled in each of the trenches dividing the n-type emitter layer surrounded by the gate electrode. A cathode electrode is provided on both the insulators and the n-type emitter layer.
    Type: Grant
    Filed: August 8, 1991
    Date of Patent: June 28, 1994
    Assignee: Hitachi, Ltd.
    Inventors: Hideo Honma, Yukimasa Satou, Susumu Murakami, Tsutomu Yatsuo, Isamu Sanpei, Kenji Yagishita