Abstract: The method includes a step of fixing the other end of the drive wire to the drive drum; a step of temporarily placing one end of the drive wire in a temporary placement portion provided on the drum housing; and a step of applying tension to the drive wire by moving the one end of the drive wire to an engaging portion provided on the drive drum after canceling the placed state of the one end of the drive wire in the temporary placement portion by pulling a portion of the drive wire on the one end side thereof by winding a portion of the drive wire on the other end side thereof by the drive drum with the one end of the drive wire placed in the temporary placement portion.

Abstract: Provided are a device and a method which are capable of performing crosstalk-removed high-quality data reproduction from a high-density recording type optical disc. The device includes a photo detector that outputs a readout signal from a reproduction track of an information recording disc, an adjacent track reproduction binary signal supply unit that outputs a binary signal (binary data) which is a reproduction signal of an adjacent track of the reproduction track, a multi-input adaptive equalizer that includes an equalizer unit that receives the readout signal from the reproduction track and an adjacent track reproduction binary signal and outputs an equalization signal by an adaptive equalization process based on an input signal, and a binarization processing unit that executes a binarization process based on the equalization signal and generates a reproduction signal of the reproduction track.

Abstract: The present invention provides an imprint apparatus comprising a plurality of processing devices configured to perform imprint processes for a plurality of substrates in parallel, and a controller configured to control the plurality of processing devices, wherein the controller is configured to control the plurality of processing devices so that each of the plurality of processing devices performs imprint processes for a plurality of regions whose positions correspond to each other over the plurality of substrates, and so that the plurality of processing devices respectively perform imprint processes for a plurality of regions whose positions are different from each other and which have shapes corresponding to each other in a single substrate.

Abstract: It is an object to provide an aluminum alloy foil for an electrode current collector, the foil having a high post-drying strength after application of an active material while keeping a high electrical conductivity. Disclosed is an aluminum alloy foil for an electrode current collector, comprising 0.03 to 0.1 mass % (hereinafter, “mass %” is simply referred to as “%”) of Fe, 0.01 to 0.1% of Si, and 0.0001 to 0.01% of Cu, with the rest consisting of Al and unavoidable impurities, wherein the aluminum alloy foil after final cold rolling has a tensile strength of 180 MPa or higher, a 0.2% yield strength of 160 MPa or higher, and an electrical conductivity of 60% IACS or higher; and the aluminum alloy foil has a tensile strength of 170 MPa or higher and a 0.2% yield strength of 150 MPa or higher even after the aluminum alloy foil is subjected to heat treatment at any of 120° C. for 24 hours, 140° C. for 3 hours, and 160° C. for 15 minutes.

Abstract: In the solar cell module, a first solar cell and a second solar cell are stacked together with an electroconductive member interposed therebetween, such that a cleaved surface-side periphery on a light-receiving surface of the first solar cell overlaps a periphery on a back surface of the second solar cell. The first solar cell and the second solar cell each have: photoelectric conversion section including a crystalline silicon substrate; collecting electrode; and back electrode. At a section where the first solar cell and the second solar cell are stacked, the collecting electrode of the first solar cell and the back electrode of the second solar cell are electrically connected to each other by coming into contact with the electroconductive member. An insulating member is provided on a part of the cleaved surface-side periphery on the light-receiving surface of the first solar cell, where the collecting electrode is not provided.

Abstract: The present invention provides a substrate with conductive layers, capable of improving both glare preventing properties and etching characteristics; a method for fabricating the same; and a substrate with touch-panel transparent electrodes. A substrate with conductive layers has, on at least one side of a transparent film substrate, a thin film underlayer, a metal oxide layer, and a first metal layer formed in this order. The thin film underlayer comprises nickel and copper or nickel oxide and copper oxide, the metal oxide layer comprises nickel oxide and copper oxide, and the first metal layer comprises of at least one of gold, silver, and copper. The substrate preferably satisfies the following relational expressions: [1] the thickness of the thin film underlayer is 20 nm or less; [2] the thickness of the metal oxide layer is 80 nm or less; and [3] the thickness of the thin film underlayer is equal to or less than the thickness of the metal oxide layer.

Abstract: Provided is a substrate with transparent electrode, which is capable of achieving both acceleration of crystallization dining a heat treatment and suppression of crystallization under a normal temperature environment. In the substrate with transparent electrode, a transparent electrode thin-film formed of a transparent conductive oxide is formed on a film substrate. An underlayer that contains a metal oxide as a main component is formed between the film substrate and the transparent electrode thin-film. The underlayer and the transparent electrode thin-film are in contact with each other. The transparent electrode thin-film is amorphous, and the base layer is dielectric and crystalline.

Abstract: A nitride semiconductor device includes an electron transit layer (103) that is formed of a nitride semiconductor, an electron supply layer (104) that is formed on the electron transit layer (103), that is formed of a nitride semiconductor whose composition is different from the electron transit layer (103) and that has a recess (109) which reaches the electron transit layer (103) from a surface, a thermal oxide film (111) that is formed on the surface of the electron transit layer (103) exposed within the recess (109), a gate insulating film (110) that is embedded within the recess (109) so as to be in contact with the thermal oxide film (111), a gate electrode (108) that is formed on the gate insulating film (110) and that is opposite to the electron transit layer (103) across the thermal oxide film (111) and the gate insulating film (110), and a source electrode (106) and a drain electrode (107) that are provided on the electron supply layer (104) at an interval such that the gate electrode (108) intervene

Abstract: An I-V measurement method is provided for a solar cell having a collecting electrode on the first surface side of a single-crystalline silicon substrate of a first conductivity type and having a transparent electrode on the outermost surface on the second surface side of the single-crystalline silicon substrate of the first conductivity-type. An electric current is supplied to the solar cell in a state in which flexible metal foil and the transparent electrode are brought into detachable contact with each other such that the flexible metal foil follows undulations of the single-crystalline silicon substrate of a first conductivity type, and the first surface is set as a light-receiving surface. It is preferable that at least on a portion that is in contact with the transparent electrode, the metal foil is formed of at least one selected from the group consisting of Sn, Ag, Ni, In, and Cu.

Abstract: A multi-junction photoelectric conversion device includes, in the following order from a light-receiving side: a first photoelectric conversion unit; an intermediate layer; and a second photoelectric conversion unit. The first photoelectric conversion unit includes: a first light absorbing layer comprising a perovskite-type crystal structure photosensitive material; a first charge transport layer on the light-receiving side of the first light absorbing layer; and a second charge transport layer on a rear side of the first light absorbing layer. The second charge transport layer is in contact with the intermediate layer. The second photoelectric conversion unit includes: a second light absorbing layer that is a crystalline silicon substrate; and a first conductive semiconductor layer that is in contact with the intermediate layer.

Abstract: This supporting structure for an underrun protector includes a stay body that connects a beam and a frame to each other; a stay reinforcing body that reinforces the stay body from an outside in a vehicle width direction; and a gusset provided between the stay reinforcing body and the beam. A stay body web face of the stay body is provided with an opening part. A pair of wall face parts provided to extend outward in the vehicle width direction from both ends of the opening part in a vehicle forward-rearward direction is provided so as to face each other. Each of the wall face parts is provided at a height corresponding to an installation position of the gusset and abuts against an inner surface of the stay reinforcing body in the vehicle width direction.

Abstract: A vehicle window regulator includes a slider base supported on a guide rail; a drive wire connected to the slider base; a wire guide supported at one end of the guide rail and having a winding part, onto which the drive wire is wound, at a position offset from the guide rail in a vehicle width direction; and a driver which raises and lowers the slider base via the drive wire. The wire guide is supported by the guide rail by a retainer and a pressing portion, the retainer engaged with the guide rail, and the pressing portion being engaged with the guide rail to press the guide rail toward the other end of the guide rail. The pressing portion is formed at a position toward the other end and formed at a position offset from the retainer toward the winding part.

Abstract: The present invention provides an imaging device with which it is possible to easily mount/remove an imaging unit by a simpler operation than in the past when mounting/removing the imaging unit to and from a bracket, and to reduce more work space than in the past. In the present invention, an imaging unit 10 has a plurality of supported parts 15 that are supported by the bracket 20. The bracket 20 has a plurality of support structures 24 for supporting the plurality of supported parts 15. The support structures 24 have a receiving port 24a opened toward the rear of a mounting direction DF for receiving the supported parts 15 in the mounting direction DF and a support 24b for supporting the supported parts 15 on the forward side in the mounting direction DF of the receiving port 24a from a support direction DS that intersects the mounting direction DF.

Abstract: A laminated hard coating comprising a layer A and a layer B, wherein the layer A and the layer B differ in composition and are laminated. Layer A contains (MaAlbCrcTad)(BxCyNz) and satisfies 0?a?0.35, 0.05?d?0.35, 0?x?0.15, 0?y?0.50, a+b+c+d=1, and x+y+z=1. M is at least one element selected from the group consisting of V, Nb, Mo, and W; a, b, c and d represent the atomic ratios of M, Al, Cr, and Ta, respectively; and x, y, and z represent the atomic ratios of B, C and N, respectively. The layer B comprises (Ti?Si?)(BxCyNz) and satisfies 0.05???0.35, 0?x?0.15, 0?y?0.50, ?+?=1, and x+y+z=1. ? and ? represent the atomic ratios of Ti and Si, respectively, and x, y, and z represent the atomic ratios of B, C, and N, respectively. One or more layers of each of these layers have been alternately laminated.

Abstract: A turbine blade designing method is for designing a turbine blade formed using a metal material in which creep including diffusion creep and dislocation creep occurs by heating. The turbine blade designing method includes: acquiring temperature distribution data relating to temperature distribution in the turbine blade to be heated; acquiring creep strength distribution data relating to distribution of the creep strength required for the turbine blade to be heated; from the correlation data, based on the temperature distribution data and the creep strength distribution data, setting the crystal grain size of a high-temperature portion that is the diffusion creep temperature range of the turbine blade to a size coarser than the reference crystal grain size, and setting the crystal grain size of a low-temperature portion that is the dislocation creep temperature range of the turbine blade to a size finer than the reference crystal grain size.

Abstract: A cutting tool has a substrate. A surface of the substrate for the cutting tool is covered with a hard film. In the cutting tool, the hard film has a root-mean-square slope R?q in a surface of the hard film of 0.060° or less.

Abstract: Provided is a substrate with transparent electrode, which is capable of achieving both acceleration of crystallization during a heat treatment and suppression of crystallization under a normal temperature environment. In the substrate with transparent electrode, a transparent electrode thin-film formed of a transparent conductive oxide is formed on a film substrate. An underlayer that contains a metal oxide as a main component is formed between the film substrate and the transparent electrode thin-film. The underlayer and the transparent electrode thin-film are in contact with each other. The transparent electrode thin-film is amorphous, and the base layer is dielectric and crystalline.

Abstract: Provided is a composition having a good flavor in which unpleasant bitterness caused by caffeine is suppressed without reducing or removing caffeine in the composition. The caffeine content and the cycloalanylalanine content of the composition are adjusted to specific ranges.

Abstract: A nitride semiconductor device includes an electron transit layer (103) that is formed of a nitride semiconductor, an electron supply layer (104) that is formed on the electron transit layer (103), that is formed of a nitride semiconductor whose composition is different from the electron transit layer (103) and that has a recess (109) which reaches the electron transit layer (103) from a surface, a thermal oxide film (111) that is formed on the surface of the electron transit layer (103) exposed within the recess (109), a gate insulating film (110) that is embedded within the recess (109) so as to be in contact with the thermal oxide film (111), a gate electrode (108) that is formed on the gate insulating film (110) and that is opposite to the electron transit layer (103) across the thermal oxide film (111) and the gate insulating film (110), and a source electrode (106) and a drain electrode (107) that are provided on the electron supply layer (104) at an interval such that the gate electrode (108) intervene

Abstract: A window regulator includes a guide rail fixed to a vehicle door panel and a slider base that supports a window glass and is slidably supported in a longitudinal direction of the guide rail along sliding surfaces on a front and a back of the guide rail. The guide rail includes a sliding portion that has a first sliding surface and a second sliding surface that face one direction and another direction in a vehicle inner-outer direction. The slider base includes a grease injection portion that includes an injection space and a grease receiving portion. The injection space opens to the vehicle inner-outer direction. The first sliding surface of the guide rail is positioned inside the injection space. The grease receiving portion is positioned opposed to the second sliding surface of the guide rail. The grease receiving portion receives a grease injected in the injection space.