Abstract: A novel readout circuit for a charge injection device is disclosed permitting selection of the integration time to optimize performance. A primary application of the invention is to IR sensing in which performance is required at both low and very high levels of radiation. The readout circuit, in one practical configuration, utilizes a dump pulse recurring at the interval required to scan all elements, in advance of the read pulse also recurring at the scanning interval. The integration time may be adjusted in multiples of the readout period for a single element up to the frame scanning interval, or in approximate fractions of the readout period for a single element, or, at the limit, in a fraction of a microsecond.