Abstract: The present disclosure concerns a magnetic memory element suitable for a thermally-assisted switching write operation, comprising a current line in electrical communication with one end of a magnetic tunnel junction, the magnetic tunnel junction comprising: a first ferromagnetic layer having a fixed magnetization; a second ferromagnetic layer having a magnetization that can be freely aligned at a predetermined high temperature threshold; and a tunnel barrier provided between the first and second ferromagnetic layer; the current line being adapted to pass a heating current through the magnetic tunnel junction during the write operation; wherein said magnetic tunnel junction further comprises at least one heating element being adapted to generate heat when the heating current is passed through the magnetic tunnel junction; and a thermal barrier in series with said at least one heating element, said thermal barrier being adapted to confine the heat generated by said at least one heating element within the magnet

Abstract: The present disclosure concerns a magnetic element to be written using a thermally-assisted switching write operation comprising a magnetic tunnel junction formed from a tunnel barrier being disposed between first and second magnetic layers, said second magnetic layer having a second magnetization which direction can be adjusted during a write operation when the magnetic tunnel junction is heated at a high threshold temperature; an upper current line connected at the upper end of the magnetic tunnel junction; and a strap portion extending laterally and connected to the bottom end of the magnetic tunnel junction; the magnetic device further comprising a bottom thermal insulating layer extending substantially parallel to the strap portion and arranged such that the strap portion is between the magnetic tunnel junction and the bottom thermal insulating layer. The magnetic element allows for reducing heat losses during the write operation and has reduced power consumption.

Abstract: The present disclosure concerns a magnetic memory element suitable for a thermally-assisted switching write operation, comprising a current line in electrical communication with one end of a magnetic tunnel junction, the magnetic tunnel junction comprising: a first ferromagnetic layer having a fixed magnetization; a second ferromagnetic layer having a magnetization that can be freely aligned at a predetermined high temperature threshold; and a tunnel barrier provided between the first and second ferromagnetic layer; the current line being adapted to pass a heating current through the magnetic tunnel junction during the write operation; wherein said magnetic tunnel junction further comprises at least one heating element being adapted to generate heat when the heating current is passed through the magnetic tunnel junction; and a thermal barrier in series with said at least one heating element, said thermal barrier being adapted to confine the heat generated by said at least one heating element within the magnet

Abstract: The present disclosure concerns a magnetic element to be written using a thermally-assisted switching write operation comprising a magnetic tunnel junction formed from a tunnel barrier being disposed between first and second magnetic layers, said second magnetic layer having a second magnetization which direction can be adjusted during a write operation when the magnetic tunnel junction is heated at a high threshold temperature; an upper current line connected at the upper end of the magnetic tunnel junction; and a strap portion extending laterally and connected to the bottom end of the magnetic tunnel junction; the magnetic device further comprising a bottom thermal insulating layer extending substantially parallel to the strap portion and arranged such that the strap portion is between the magnetic tunnel junction and the bottom thermal insulating layer. The magnetic element allows for reducing heat losses during the write operation and has reduced power consumption.

Abstract: A memory unit with one field line; at least two thermally-assisted switching magnetic tunnel junction-based magnetic random access memory cells, each cell comprising a magnetic tunnel junction having an insulating layer disposed between a magnetic storage layer and a magnetic reference layer; wherein a selection transistor is connected to the magnetic tunnel junction; the one field line is used for passing a field current for switching a magnetization of the storage layer of the magnetic tunnel junctions of the cells. A magnetic memory device can be formed by assembling an array of the memory units, wherein at least two adjacent magnetic tunnel junctions of the cells can be addressed simultaneously by the field line. The memory unit and magnetic memory device have a reduced surface area. Magnetic memory devices with an increased density of memory units can be fabricated resulting in lower die fabrication cost and lower power consumption.

Abstract: A memory unit with one field line; at least two thermally-assisted switching magnetic tunnel junction-based magnetic random access memory cells, each cell comprising a magnetic tunnel junction having an insulating layer disposed between a magnetic storage layer and a magnetic reference layer; wherein a selection transistor is connected to the magnetic tunnel junction; the one field line is used for passing a field current for switching a magnetization of the storage layer of the magnetic tunnel junctions of the cells. A magnetic memory device can be formed by assembling an array of the memory units, wherein at least two adjacent magnetic tunnel junctions of the cells can be addressed simultaneously by the field line. The memory unit and magnetic memory device have a reduced surface area. Magnetic memory devices with an increased density of memory units can be fabricated resulting in lower die fabrication cost and lower power consumption.

Abstract: Systems and methods are disclosed for providing a consumer shopping experience. The disclosed systems and methods include receiving a user input and providing, in response to the user input, one of a first series of pages, a second series of pages, and a third series of pages. Furthermore, the first series of pages are configured to allow a user to select at least one of products and services from at least one business line before the first series of pages request personal information. In addition, the second series of pages are configured to indicate whether currently received services at a first location are available at a second location. Moreover, the third series of pages are configured to allow the user to select at least one of products and services from the at least one business line.

Abstract: Methods and apparatus provide a magnetic head that includes a magnetoresistive read sensor disposed between a first magnetic shield and a second magnetic shield. The second magnetic shield is configured to reduce effects on the read sensor due to unevenness in a topography of the read sensor.

Abstract: Systems and methods for the manufacture of a magnetic head. A first embodiment provides an apparatus for the manufacture of a magnetic head comprising a feedback control loop to terminate lapping of the magnetic head responsive to achieving a target signal to noise ratio for the magnetic head.

Abstract: Systems and methods for the manufacture of a magnetic head. A first embodiment provides an apparatus for the manufacture of a magnetic head comprising a feedback control loop to terminate lapping of the magnetic head responsive to achieving a target signal to noise ratio for the magnetic head.

Abstract: A precisely machined test nest holds a single hard disk drive slider. The test nest is fabricated to contain a micro pickup coil that is positioned to be able to detect magnetic flux from a write element of the slider. The micro pickup coil has highly repeatable and controllable positioning with respect to the write element. This technique also allows local magnetic field to be applied to the read element, and its small size allows excitation at higher frequencies than are currently achievable today. The coil is lithographically defined and integrated into the test nest and used on single slider testers. The low inductance of the coil allows it to be driven at high frequencies. Its position within the test nest ensures good heat sinking and enables large current pulses to be employed.

Abstract: A method is disclosed for testing pinned layers of magnetic disk drive read heads having at least one pinned layer, where the magnetic orientation of the pinned layers has been set in an initial direction. The method includes applying a large magnetic test field at a reverse canted reset angle. First test responses from the disk drive read heads are then measured in a small magnetic test field. A large magnetic test field is applied at normal canted reset angle. The disk drive heads are then subjected to a full suite of performance tests in a small magnetic test field to verify their acceptability. These second test responses are then compared to the first test responses to identify read heads having weakly pinned layers.

Abstract: A releasable security fixing system comprising a bolt (3) having a head and a shank. A security nut (7) which is engageable threadingly with the shank of the bolt and a cupped collar (5) having a hole in the cupped end to fit over the shank of the bolt and having a length greater than the projecting end of the shank of the bolt when installed, and being open at the other end to receive the security nut. The security nut has a circular periphery and is provided with a plurality of grooves (77) cut into one end of the nut and extending away from said end. A complimentary key (10) is provided for fitting and releasing the nut. The shank of the bolt is such that, in use, the shank of the bolt projects beyond the security nut in its installed position, and the key having an aperture to receive the projecting end of the bolt shank.

Abstract: A spin valve sensor in a read head has a spacer layer which is located between a self-pinned AP pinned layer structure and a free layer structure. The free layer structure is longitudinally stabilized by first and second hard bias layers which abut first and second side surfaces of the spin valve sensor. The AP pinned layer structure has an antiparallel coupling layer (APC) which is located between first and second AP pinned layers (AP1) and (AP2). The invention employs a resetting process for setting of the magnetic moments of the AP pinned layers by applying a field at an acute angle to the head surface in a plane parallel to the major planes of the layers of the sensor. The resetting process sets a proper polarity of each AP pinned layer, which polarity conforms to processing circuitry employed with the spin valve sensor.

Abstract: A releasable security fixing system comprising a bolt (3) having a head and a shank. A security nut (7) which is engageable threadingly with the shank of the bolt and a cupped collar (5) having a hole in the cupped end to fit over the shank of the bolt and having a length greater than the projecting end of the shank of the bolt when installed, and being open at the other end to receive the security nut. The security nut has a circular periphery and is provided with a plurality of grooves (77) cut into one end of the nut and extending away from said end. A complimentary key (10) is provided for fitting and releasing the nut. The shank of the bolt is such that, in use, the shank of the bolt projects beyond the security nut in its installed position, and the key having an aperture to receive the projecting end of the bolt shank.