Abstract: Fabrication of a bondwire inductor between connection pads of a semiconductor package using a wire bonding process is disclosed herein. To that end, the bondwire inductor is fabricated by extending a bondwire connecting two connection pads of the semiconductor package around a dielectric structure, e.g., a dielectric post or posts, disposed between the connection pads a defined amount. In so doing, the bondwire inductor adds inductance between the connection pads, where the added inductance is defined by factors which at least include the amount the bondwire extends around the dielectric structure. Such additional inductance may be particularly beneficial for certain semiconductor devices and/or circuits, e.g., monolithic microwave integrated circuits (MMICs) to control or supplement impedance matching, harmonic termination, matching biasing, etc.

Abstract: RF transistor amplifiers are provided that include a submount and an RF transistor amplifier die that is mounted on top of the submount. A multi-layer encapsulation is formed that at least partially covers the RF transistor amplifier die. The multi-layer encapsulation includes a first dielectric layer and a first conductive layer, where the first dielectric layer is between a top surface of the RF transistor amplifier die and the first conductive layer.

Abstract: RF transistor amplifiers are provided that include a submount and an RF transistor amplifier die that is mounted on top of the submount. A multi-layer encapsulation is formed that at least partially covers the RF transistor amplifier die. The multi-layer encapsulation includes a first dielectric layer and a first conductive layer, where the first dielectric layer is between a top surface of the RF transistor amplifier die and the first conductive layer.

Abstract: Fabrication of a bondwire inductor between connection pads of a semiconductor package using a wire bonding process is disclosed herein. To that end, the bondwire inductor is fabricated by extending a bondwire connecting two connection pads of the semiconductor package around a dielectric structure, e.g., a dielectric post or posts, disposed between the connection pads a defined amount. In so doing, the bondwire inductor adds inductance between the connection pads, where the added inductance is defined by factors which at least include the amount the bondwire extends around the dielectric structure. Such additional inductance may be particularly beneficial for certain semiconductor devices and/or circuits, e.g., monolithic microwave integrated circuits (MMICs) to control or supplement impedance matching, harmonic termination, matching biasing, etc.

Abstract: Circuits and methods for reducing the cost and/or power consumption of a user terminal and/or the gateway of a telecommunications system that may include a telecommunications satellite. Embodiments include “chained” feedback-regulated voltage supply circuits. These circuits substantially eliminate the need for separate regulator circuits for each regulated voltage. These circuits are designed to automatically maintain a substantially constant first voltage at a first node for a first load and maintain a substantially constant second voltage at a second node for a second load. Some disclosed configurations of these circuits may be useful to achieve greater current capability at the same voltage without requiring larger switches and higher inductor and capacitor sizes that may be needed in a single (conventional) stage voltage supply circuit.

Abstract: Circuits and methods for reducing the cost and/or power consumption of a user terminal and/or the gateway of a telecommunications system that may include a telecommunications satellite. Embodiments include “chained” feedback-regulated voltage supply circuits. These circuits substantially eliminate the need for separate regulator circuits for each regulated voltage. These circuits are designed to automatically maintain a substantially constant first voltage at a first node for a first load and maintain a substantially constant second voltage at a second node for a second load. Some disclosed configurations of these circuits may be useful to achieve greater current capability at the same voltage without requiring larger switches and higher inductor and capacitor sizes that may be needed in a single (conventional) stage voltage supply circuit.

Abstract: Circuits and methods for reducing the cost and/or power consumption of a user terminal and/or the gateway of a telecommunications system (550) that may include a telecommunications satellite. Embodiments generate a dynamic input bias signal based upon an information signal envelope (which may be pre-distorted) which is applied to the signal input of a power amplifier (PA), thus reducing average power consumption. Other embodiments further include dynamic linearization (518) of the information signal, and/or variation of the supply voltage to the power amplifier (PA) as a function of the envelope of the information signal. Another aspect is a multi-stage “chained” feedback regulated voltage supply circuit for providing two or more output voltages that may be used as alternative supply voltages to a power amplifier (PA).

Abstract: Circuits and methods for reducing the cost and/or power consumption of a user terminal and/or the gateway of a telecommunications system (550) that may include a telecommunications satellite. Embodiments generate a dynamic input bias signal based upon an information signal envelope (which may be pre-distorted) which is applied to the signal input of a power amplifier (PA), thus reducing average power consumption. Other embodiments further include dynamic linearization (518) of the information signal, and/or variation of the supply voltage to the power amplifier (PA) as a function of the envelope of the information signal. Another aspect is a multi-stage “chained” feedback regulated voltage supply circuit for providing two or more output voltages that may be used as alternative supply voltages to a power amplifier (PA).

Abstract: Enhanced RF system measurement including measurement of reflected power of a transmission system using two directional couplers configured to couple reflected power (e.g., isolate forward power). The directional couplers may be placed at a distance of ¼ wave separation and measurements from the two directional couplers may be averaged to obtain a reflected power for the transmission path. The enhanced measurement of reflected power may be used to obtain a more accurate VSWR or return loss measurement. An indication of the reflected power (e.g., VSWR, return loss, etc.) may be fed back to a source, which may adjust transmit power based on the measured VSWR to achieve a certain amount of power conveyed to the load (e.g., target radiated power from an antenna, etc.). Error conditions may be detected and the source may terminate transmission to prevent potential adverse operating conditions.

Abstract: Enhanced RF system measurement including measurement of reflected power of a transmission system using two directional couplers configured to couple reflected power (e.g., isolate forward power). The directional couplers may be placed at a distance of ¼ wave separation and measurements from the two directional couplers may be averaged to obtain a reflected power for the transmission path. The enhanced measurement of reflected power may be used to obtain a more accurate VSWR or return loss measurement. An indication of the reflected power (e.g., VSWR, return loss, etc.) may be fed back to a source, which may adjust transmit power based on the measured VSWR to achieve a certain amount of power conveyed to the load (e.g., target radiated power from an antenna, etc.). Error conditions may be detected and the source may terminate transmission to prevent potential adverse operating conditions.

Abstract: An RF power device comprising a power transistor fabricated in a first semiconductor chip and a MOSCAP type structure fabricated in a second semiconductor chip. A voltage limiting device is provided for protecting the power transistor from input voltage spikes and is preferably fabricated in the semiconductor chip along with the MOSCAP. Alternatively, the voltage limiting device can be a discrete element fabricated on or adjacent to the capacitor semiconductor chip. By removing the voltage limiting device from the power transistor chip, fabrication and testing of the voltage limiting device is enhanced, and semiconductor area for the power device is increased and aids in flexibility of device fabrication.

Abstract: An RF power device comprising a power transistor fabricated in a first semiconductor chip and a MOSCAP type structure fabricated in a second semiconductor chip. A voltage limiting device is provided for protecting the power transistor from input voltage spikes and is preferably fabricated in the semiconductor chip along with the MOSCAP. Alternatively, the voltage limiting device can be a discrete element fabricated on or adjacent to the capacitor semiconductor chip. By removing the voltage limiting device from the power transistor chip, fabrication and testing of the voltage limiting device is enhanced, and semiconductor area for the power device is increased and aids in flexibility of device fabrication.