Abstract: One process used to remove material from a surface is ion etching. In certain cases, ion etching involves delivery of both ions and a reactive gas to a substrate. The disclosed embodiments permit local high pressure delivery of reactive gas to a substrate while maintaining a much lower pressure on portions of the substrate that are outside of the local high pressure delivery area. In many cases, the low pressure is achieved by providing an injection head that confines the high pressure reactant delivery to a small area and vacuums away excess reactants and byproducts as they leave this small area and before they enter the larger substrate processing region. The disclosed injection head may be used to increase throughput while minimizing deleterious collisions between ions and other species present in the substrate processing region. The disclosed injection head may also be used in other types of semiconductor wafer processing.

Abstract: One process used to remove material from a surface is ion etching. In certain cases, ion etching involves delivery of both ions and a reactive gas to a substrate. The disclosed embodiments permit local high pressure delivery of reactive gas to a substrate while maintaining a much lower pressure on portions of the substrate that are outside of the local high pressure delivery area. In many cases, the low pressure is achieved by providing an injection head that confines the high pressure reactant delivery to a small area and vacuums away excess reactants and byproducts as they leave this small area and before they enter the larger substrate processing region. The disclosed injection head may be used to increase throughput while minimizing deleterious collisions between ions and other species present in the substrate processing region. The disclosed injection head may also be used in other types of semiconductor wafer processing.

Abstract: One process that may be used to remove material from a surface is ion etching. In certain cases, ion etching involves delivery of both ions and a reactive gas to a substrate. The disclosed embodiments permit local high pressure delivery of reactive gas to a substrate while maintaining a much lower pressure on portions of the substrate that are outside of the local high pressure delivery area. The low pressure is achieved by confining the high pressure reactant delivery to a small area and vacuuming away excess reactants and byproducts as they leave this small area and before they enter the larger substrate processing region. The disclosed techniques may be used to increase throughput while minimizing deleterious collisions between ions and other species present in the substrate processing region.

Abstract: A substrate processing system that includes a substrate processing chamber having one or more sidewalls that at least partially define a substrate processing region and extend away from a bottom wall of the substrate processing chamber at an obtuse angle; a source material holder configured to hold a source material within the substrate processing region; a plasma gun operatively coupled to introduce a plasma beam into the substrate processing region; one or more magnets operatively arranged to generate a magnetic field that guides the plasma beam to the source material holder; and a substrate carrier configured to hold one or more substrates within the substrate processing region.

Abstract: A substrate processing system that includes a substrate processing chamber having one or more sidewalls that at least partially define a substrate processing region and extend away from a bottom wall of the substrate processing chamber at an obtuse angle; a source material holder configured to hold a source material within the substrate processing region; a plasma gun operatively coupled to introduce a plasma beam into the substrate processing region; one or more magnets operatively arranged to generate a magnetic field that guides the plasma beam to the source material holder; and a substrate carrier configured to hold one or more substrates within the substrate processing region.

Abstract: One process that may be used to remove material from a surface is ion etching. In certain cases, ion etching involves delivery of both ions and a reactive gas to a substrate. The disclosed embodiments permit local high pressure delivery of reactive gas to a substrate while maintaining a much lower pressure on portions of the substrate that are outside of the local high pressure delivery area. The low pressure is achieved by confining the high pressure reactant delivery to a small area and vacuuming away excess reactants and byproducts as they leave this small area and before they enter the larger substrate processing region. The disclosed techniques may be used to increase throughput while minimizing deleterious collisions between ions and other species present in the substrate processing region.

Abstract: A method and apparatus for delivering a polishing fluid to a chemical mechanical polishing surface is provided. In one embodiment, an apparatus for delivering a polishing fluid to a chemical mechanical polishing surface includes an arm having a plurality of holes formed in the arm for retaining a plurality of polishing fluid delivery tubes. Each of the tubes are disposed through one of the holes and coupled to the arm. The number of holes exceeds the number of tubes, thereby allowing the distribution of polishing fluid to a polishing surface and correspondingly the local polishing rates across a diameter of a substrate being polished to be controlled.

Abstract: A method and apparatus for delivering a polishing fluid to a chemical mechanical polishing surface is provided. In one embodiment, an apparatus for delivering a polishing fluid to a chemical mechanical polishing surface includes an arm having a plurality of holes formed in the arm for retaining a plurality of polishing fluid delivery tubes. Each of the tubes are disposed through one of the holes and coupled to the arm. The number of holes exceeds the number of tubes, thereby allowing the distribution of polishing fluid to a polishing surface and correspondingly the local polishing rates across a diameter of a substrate being polished to be controlled.