Abstract: An active matrix array device (100) comprises a plurality of matrix elements (110a-i), each matrix element comprising a charge storage device (112a-i), and a plurality of charging conductors (142, 144, 146; 704). Each charging conductor is coupled to a subset of the plurality of matrix elements (110a-i) via respective thin film transistors (116a-i). A driver circuit (120; 702) generates a plurality of output voltages, and a plurality of voltage modification circuits (706, 806) are used to apply a step voltage waveform for modifying the output voltage to modify a charge time of one of the charge storage devices (112a-i) coupled to the charging conductor (142, 144, 146; 704).

Abstract: A co-planar thin film transistor, TFT (22), and a method of fabricating the same, in which an additional insulating layer is provided on the source contact (30) and the drain contact (32) and defined such that a first region (34) of the additional insulating layer occupies substantially the same area as the source contact (30) and a second region (36) of the additional insulating layer occupies substantially the same area as the drain contact (32). This tends to provide a reduction in the gate (62) to source capacitance, and the gate (62) to drain capacitance. In some geometries this can be achieved without any additional masks or defining steps.

Abstract: A video signal distribution system contains a video stream source (10) that produces a data stream with an encrypted video signal, control word information for decrypting the video signal and fee information indicative of fees for viewing respective parts of the video signal. A plurality of video reproduction apparatuses (12) are coupled to a medium (14) to receive the data stream. Each of the video reproduction apparatuses (12) comprises a control word derivation unit (125) for supplying control words derived from the control word information to a video signal decryption device (121). A credit management unit with a credit memory (128) is provided, which enables or disables supply the control words, when the credit memory (128) indicates the availability of more than a threshold amount of credit, and reduces the amount of credit in the credit memory (128) according to the fee information for the part of the video signal for the decoding of which the control words are supplied.

Abstract: An active matrix array device (100) has a plurality of active matrix array elements (110a-i), which each have a charge storage element (112a-I) and a capacative output element (114a-I), and which are coupled to respective addressing conductors (172, 174, 176) and to respective charging conductors (142, 144, 146) via respective thin film transistors (116a-I). The charging conductors (142, 144, 146) are coupled to the respective stages (122, 124, 126) of a driver circuit (120) via respective voltage modification circuits (132, 134, 136), which are responsive to respective voltage waveform generators (252, 254, 256). The respective voltage modification circuits (132, 134, 136) are arranged to modulate the outputs of the stages (122, 124, 126) with a voltage waveform from the respective voltage waveform generators (252, 254, 256) in order to overdrive the addressed matrix array element during a part of its charging cycle.

Abstract: A method of manufacturing a semiconductor device in which a conductive layer (6) provided on a surface (4) of a semiconductor body (1) is formed with at least one opening (10). The semiconductor device may be an insulated gate field effect transistor (IGFET) in which case the opening (10) defines a hollow gate structure for the IGFET. Insulating material (16') is grown on the surface (4) to cover the conductive layer.