Patents by Inventor Kenneth Wisheng Ouyang

Kenneth Wisheng Ouyang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080144799
    Abstract: A module and method for automatically detecting and switching between FXO and FXS interfaces via a single RJ11 is disclosed. The module comprises a RJ11 jack, a USB controller, a modem element, a SLIC module and a DAA module, wherein the USB controller is electrically coupled with a computer for automatically detecting whether a PSTN phone line or a traditional telephone is plugged into the RJ11 jack. According to the detection, the telephone can be connected to the Internet for making and answering a VoIP call via the computer; the computer can be connected to the Internet for making and answering a VoIP call via the modem element; or the computer can make/answer a call to/from the PSTN.
    Type: Application
    Filed: December 3, 2007
    Publication date: June 19, 2008
    Applicant: F3 Inc.
    Inventors: Chieh Chang, Kenneth Wisheng Ouyang, Yin-Kun Huang, Kuan-Hsi Chen, Chih-Sheng Hsu
  • Publication number: 20080049721
    Abstract: A 3-in-1 automatic call forward system integrates the domestic phone, the mobile phone and the internet phone for switching the communication method automatically and choosing an appropriate method to transmit or receive a phone call. The users also can choose the same telecom service provider to perform communication with each other for reducing the telephone fees.
    Type: Application
    Filed: February 15, 2007
    Publication date: February 28, 2008
    Applicant: F3 Incorporation
    Inventors: Kenneth Wisheng Ouyang, Yin-Kun Huang, Chih-Yuan Lee, Chih-Sheng Hsu
  • Patent number: 5956269
    Abstract: A method and devices are provided for producing a non-volatile SRAM, of the type composed of two back-to-back, cross-coupled, CMOS inverters, each with a PMOS and an NMOS and respective outputs Q and Q.about. connected therebetween, even when the cell is completely symmetrical, by creating a stable condition wherein Q.noteq.Q.about. through rendering the threshold voltages of the NMOS devices different. The threshold voltages of the NMOSs are made different by using hot electron injection. The hot electron effect is produced by meeting the conditions, that 1) one of the NMOSs must be in saturation condition, i.e., V.sub.DS .gtoreq.V.sub.GS -V.sub.th, where V.sub.DS is the drain to source voltage, V.sub.GS is the gate to source voltage, and V.sub.th the threshold voltage, of the NMOS, and 2) V.sub.DS must be large enough, typically about 7 V, depending on the fabrication process.
    Type: Grant
    Filed: November 5, 1997
    Date of Patent: September 21, 1999
    Assignee: Industrial Technology Research Institute
    Inventors: Kenneth Wisheng Ouyang, Ding-Hsu Yen