Abstract: A photocurable composition including metal oxide nanoparticles (X) and a photopolymerizable sulfur compound (C).

Abstract: A photocurable composition containing metal oxide nanoparticles (X), a photopolymerizable compound (B), and a photoradical polymerization initiator (C), in which the content of the photoradical polymerization initiator (C) is 10 parts by mass or more with respect to 100 parts by mass of the total content of the metal oxide nanoparticles (X) and the photopolymerizable compound (B).

Abstract: A pattern forming method including pressing a mold having an uneven pattern against a curable film formed of a nanoimprint composition to transfer the uneven pattern to the curable film, curing the curable film to which the uneven pattern has been transferred while pressing the mold against the curable film to form a cured film, peeling the mold off from the cured film, and heating the cured film, from which the mold has been peeled off at 160° C. or higher to form a post-baked cured film.

Abstract: A production method for a refined product of a metal nanoparticle-containing composition, including causing a metal nanoparticle-containing composition to pass in a liquid state from one side to the other side of a porous polyimide and/or polyamide-imide membrane having interconnection pores with differential pressure, and a production method for a refined product of a metal nanoparticle dispersion liquid, including causing a metal nanoparticle dispersion liquid to pass from one side to the other side of a porous polyimide and/or polyamide-imide membrane having interconnection pores with differential pressure.

Abstract: A pattern forming method including forming a curable film using a curable composition that contains metal oxide nanoparticles, on a substrate, pressing a mold having a line and space pattern against the curable film to transfer the line and space pattern to the curable film, curing the curable film to which the line and space pattern has been transferred while pressing the mold against the curable film, to form a cured film, and peeling the mold off the cured film to form a line and space pattern on the substrate, in which a line width x of the line and space pattern formed on the substrate in a base portion and a volume average primary particle diameter ? of the metal oxide nanoparticles satisfy an expression of 0.03x<?<0.08x, and an expression of x?500 nm.

Abstract: A nanoimprint composition including an unsaturated acid metal salt (R), a photopolymerizable compound (B), a photoradical polymerization initiator, and a solvent component having compatibility with the unsaturated acid metal salt (R) and the photopolymerizable compound (B), in which a content of the unsaturated acid metal salt (R) is 50 parts by mass or greater with respect to 100 parts by mass of a total content of the unsaturated acid metal salt (R) and the photopolymerizable compound (B).

Abstract: A photocurable composition including metal oxide nanoparticles, a component (R) which is an unsaturated acid metal salt, a photopolymerizable compound excluding a compound corresponding to the component (R), and a photoradical polymerization initiator.

Abstract: A composition for nanoimprinting including a siloxane polymer which includes a polymerizable group polymerized by irradiation with light; a polymerization initiator; and a fluorine-containing polymeric compound in which the fluorine-containing polymeric compound has a constituent unit represented by the following formula (f1-1) in which R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms, Rf102 and Rf103 each independently represent a hydrogen atom, a halogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms, Rf102 and Rf103 may be the same as or different from each other, nf1 represents an integer of 1 to 5, and Rf101 represents an organic group including a fluorine atom.

Abstract: A composition for nanoimprinting including a siloxane polymer which includes a polymerizable group polymerized by irradiation with light; a polymerization initiator; and a fluorine-containing polymeric compound in which the fluorine-containing polymeric compound has a constituent unit represented by the following formula (f1-1) in which R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms, Rf102 and Rf103 each independently represent a hydrogen atom, a halogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms, Rf102 and Rf103 may be the same as or different from each other, nf1 represents an integer of 1 to 5, and Rf101 represents an organic group including a fluorine atom.

Abstract: A method of forming a resist pattern including: forming a resist film on a substrate using a resist composition containing a base component (A) which exhibits decreased solubility in an organic solvent by action of an acid; exposing the resist film; and patterning by a negative-tone development using a developing solution containing the organic solvent, wherein the base component (A) contains a resin component (A1) having a structural unit (a0) which generates acid upon exposure and a structural unit (a1) derived from an acrylate ester which may have the hydrogen atom bonded to the carbon atom on the ?-position substituted with a substituent and contains an acid decomposable group which exhibits increased polarity by the action of acid, and the developing solution contains a nitrile solvent.

Abstract: A compound represented by formula (I). In the formula, R1 represents a hydrocarbon group of 1 to 10 carbon atoms; Z represents a hydrocarbon group of 1 to 10 carbon atoms or a cyano group; provided that R1 and Z may be mutually bonded to form a ring; X represents a divalent linking group having any one selected from —O—C(?O)—, —NH—C(?O)— and —NH—C(?NH)— on a terminal that comes into contact with Q; p represents an integer of 1 to 3; Q represents a hydrocarbon group having a valency of (p+1), provided that, when p is 1, Q may be a single bond; R2 represents a single bond, an alkylene group which may have a substituent or an arylene group which may have a substituent; q represents 0 or 1; r represents an integer of 0 to 8; and A+ represents a metal cation or an organic cation.

Abstract: A resist composition including a base component containing a polymer (A1) having a structural unit (a5) containing a group represented by general formula (a5-0-1) or (a5-0-2), wherein the amount of the monomer that derives the structural unit (a5) is not more than 100 ppm relative to (A1). In the formulas, each of Q1 and Q2 represents single bond or divalent linking group, R3, R4 and R5 represent organic groups, and R4 and R5 may be bonded to each other to form a ring in combination with the sulfur atom, provided that —R3—S+(R4)(R5) has a total of only one aromatic ring or has no aromatic rings, V? represents a counter anion, A? represents an organic group containing anion, and Mm+ represents an organic cation having a valency of m, wherein m represents an integer of 1 to 3, provided that Mm+ has only one aromatic ring or has no aromatic rings.

Abstract: A resist composition which can form a very fine resist pattern with excellent lithography properties, a new polymeric compound useful for the resist composition, and a compound useful as a monomer for the polymeric compound. The resist composition contains a polymeric compound containing a structural unit (a0) represented by general formula (a0) shown below. In the formula (a0), A is an anion represented by the general formula (1) or (2).

Abstract: A resist composition including a base component (A) which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, the base component (A) including a resin component (A1) containing a structural unit (a0-1) having a group represented by general formula (a0-1) shown below and a structural unit (a1) derived from an acrylate ester which may have the hydrogen atom bonded to the carbon atom on the ?-position substituted with a substituent and contains an acid decomposable group which exhibits increased polarity by the action of acid.

Abstract: A resist composition including a base component (A) which generates acid upon exposure and exhibits changed solubility in a developing solution under the action of acid, the base component (A) containing a polymeric compound (A1) including a structural unit (a0) represented by general formula (a0-1) shown below, a structural unit (a1) containing an acid decomposable group which exhibits increased polarity by the action of acid and a structural unit (a6) which generates acid upon exposure (wherein R1 represents a hydrogen atom, an alkyl group or a halogenated alkyl group; W represents —COO—, —CONH— or a divalent aromatic hydrocarbon group; Y1 and Y2 represents a divalent linking group or a single bond; R?1 represents a hydrogen atom or an alkyl group of 1 to 6 carbon atoms; R?2 represents a monovalent aliphatic hydrocarbon group; and R2 represents an —SO2— containing cyclic group).

Abstract: A resist composition for EUV exhibiting E0KrF greater than E0EUV, in which E0KrF is a sensitivity to KrF light of 248 nm, and E0EUV is a sensitivity to EUV light, and a method of producing a resist composition for EUV including preparing the resist composition so that E0KrF is greater than E0EUV, and a method of forming a resist pattern, including applying the resist composition for EUV to a substrate to form a resist film on the substrate; conducting EUV exposure of the resist film; and developing the resist film to form a resist pattern. The resulting resist composition for EUV exhibits excellent lithography properties and pattern shape in EUV lithograph.

Abstract: A compound represented by formula (I). In the formula, R1 represents a hydrocarbon group of 1 to 10 carbon atoms; Z represents a hydrocarbon group of 1 to 10 carbon atoms or a cyano group; provided that R1 and Z may be mutually bonded to form a ring; X represents a divalent linking group having any one selected from —O—C(?O)—, —NH—C(?O)— and —NH—C(?NH)— on a terminal that comes into contact with Q; p represents an integer of 1 to 3; Q represents a hydrocarbon group having a valency of (p+1), provided that, when p is 1, Q may be a single bond; R2 represents a single bond, an alkylene group which may have a substituent or an arylene group which may have a substituent; q represents 0 or 1; r represents an integer of 0 to 8; and A+ represents a metal cation or an organic cation.

Abstract: A resist composition including a polymeric compound (A1) containing a structural unit (a0) represented by general formula (a0-1) and a structural unit (a6) which generates acid upon exposure, and a method of forming a resist pattern using the resist composition. In general formula (a0-1), R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms; Wa0 represents a single bond or an aliphatic hydrocarbon group having 1 to 5 carbon atoms and having a valency of (na0+1); Ra0 represents an aryl group of 4 to 16 carbon atoms which may have a substituent; and na0 represents 1 or 2.

Abstract: A method of forming a resist pattern including: forming a resist film on a substrate using a resist composition containing a base component (A) which exhibits decreased solubility in an organic solvent by action of an acid; exposing the resist film; and patterning by a negative-tone development using a developing solution containing the organic solvent, wherein the base component (A) contains a resin component (A1) having a structural unit (a0) which generates acid upon exposure and a structural unit (a1) derived from an acrylate ester which may have the hydrogen atom bonded to the carbon atom on the ?-position substituted with a substituent and contains an acid decomposable group which exhibits increased polarity by the action of acid, and the developing solution contains a nitrile solvent.

Abstract: A positive resist composition including: a base component; and a sensitizer which a polymeric compound having a core portion that includes a hydrocarbon group or a heterocycle of two or more valences and at least one arm portion bonded to the core portion and represented by formula (1), and a polymeric compound having a core portion including a polymer having a molecular weight of 500 to 20,000 and at least one arm portion bonded to the core portion and represented by formula (1); and either the base component includes a resin component that generates acid upon exposure and exhibits increased solubility in an alkali developing solution under action of acid, or the positive resist composition further contains an acid generator component including a compound that generates acid upon exposure: —(X)—Y??(1) in which X represents a divalent linking group having an acid dissociable group; and Y represents a polymer chain.