Patents by Inventor Kenric Choi

Kenric Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130319013
    Abstract: Apparatus for thermal management of a precursor for use in substrate processing are provided herein. In some embodiments, an apparatus for thermal management of a precursor for use in substrate processing may include a body having an opening sized to receive a storage container having a liquid or solid precursor disposed therein, the body fabricated from thermally conductive material; one or more thermoelectric devices coupled to the body proximate the opening; and a heat sink coupled to the one or more thermoelectric devices.
    Type: Application
    Filed: May 24, 2013
    Publication date: December 5, 2013
    Inventors: DAVID K. CARLSON, ERROL ANTONIO C. SANCHEZ, KENRIC CHOI, MARCEL E. JOSEPHSON, DENNIS DEMARS
  • Publication number: 20130087099
    Abstract: Described are apparatuses and methods for the hydroxylation of a substrate surface using ammonia and water vapor.
    Type: Application
    Filed: February 2, 2012
    Publication date: April 11, 2013
    Applicant: Applied Materials, Inc.
    Inventor: Kenric Choi
  • Publication number: 20130019960
    Abstract: Provided are apparatus and methods for generating a chemical precursor. The apparatus comprises an inlet line to be connected to an ampoule and an outlet line to be connected to an ampoule. The inlet line having an inlet valve to control the flow of a carrier gas into the ampoule and the outlet line has an outlet valve to control the flow exiting the ampoule. A bypass valve allows carrier gas to bypass the ampoule and purge the outlet valve without flowing gas into the ampoule.
    Type: Application
    Filed: July 20, 2012
    Publication date: January 24, 2013
    Applicant: Applied Materials, Inc.
    Inventors: Kenric Choi, Joseph Yudovsky, Steven D. Marcus, Ernesto Ulloa
  • Patent number: 8343279
    Abstract: Embodiments of the invention provide apparatuses and methods for depositing materials on substrates during vapor deposition processes, such as atomic layer deposition (ALD). In one embodiment, a chamber contains a substrate support with a receiving surface and a chamber lid containing an expanding channel formed within a thermally insulating material. The chamber further includes at least one conduit coupled to a gas inlet within the expanding channel and positioned to provide a gas flow through the expanding channel in a circular direction, such as a vortex, a helix, a spiral or derivatives thereof. The expanding channel may be formed directly within the chamber lid or formed within a funnel liner attached thereon. The chamber may contain a retaining ring, an upper process liner, a lower process liner or a slip valve liner. Liners usually have a polished surface finish and contain a thermally insulating material such as fused quartz or ceramic.
    Type: Grant
    Filed: May 12, 2005
    Date of Patent: January 1, 2013
    Assignee: Applied Materials, Inc.
    Inventors: Nyi Oo Myo, Kenric Choi, Shreyas Kher, Pravin Narwankar, Steve Poppe, Craig R. Metzner, Paul Deaten
  • Patent number: 8309874
    Abstract: A method and apparatus for heating or cooling a fluid. An inlet conduit coupled to a plurality of distribution nozzles in fluid communication with a channel at the periphery of the apparatus. An insert and a sleeve cooperatively define a thin gap, in fluid communication with the channel, through which the fluid flows. Thermal inserts near the thin gap generate heat flux into or out of the fluid, which exits through an outlet conduit.
    Type: Grant
    Filed: May 16, 2008
    Date of Patent: November 13, 2012
    Assignee: Applied Materials, Inc.
    Inventors: Tao Hou, Son T. Nguyen, Kenric Choi, Anh N. Nguyen
  • Publication number: 20120201959
    Abstract: Described are systems and methods for the hydroxylation of a substrate surface using ammonia and water vapor.
    Type: Application
    Filed: February 2, 2012
    Publication date: August 9, 2012
    Applicant: Applied Materials, Inc.
    Inventors: Kenric Choi, Tatsuya E. Sato, Ernesto Ulloa
  • Publication number: 20120135609
    Abstract: Provided are gas distribution plates (showerheads) for use in an apparatus configured to form a film during, for example, an atomic layer deposition (ALD) process. The gas distribution plate comprises a body defining a thickness and a peripheral edge and has a front surface for facing the substrate. The front surface has a central region with a plurality of openings configured to distribute process gases over the substrate and a focus ring with a sloped region. The focus ring is concentric to the central region such that the thickness at the focus ring is greater than the thickness at the central region.
    Type: Application
    Filed: November 30, 2010
    Publication date: May 31, 2012
    Applicant: Applied Materials, Inc.
    Inventors: Joseph Yudovsky, Tatsuya Sato, Kenric Choi, Anh N. Nguyen, Faruk Gungor
  • Publication number: 20100305884
    Abstract: Methods of determining an amount of precursor in an ampoule have been provided herein. In some embodiments, a method for determining an amount of solid precursor in an ampoule may include determining a first pressure in an ampoule having a first volume partially filled with a solid precursor; flowing an amount of a first gas into the ampoule to establish a second pressure in the ampoule; determining a remaining portion of the first volume based on a relationship between the first pressure, the second pressure, and the amount of the first gas flowed into the ampoule; and determining the amount of solid precursor in the ampoule based on the first volume and the remaining portion of the first volume.
    Type: Application
    Filed: May 17, 2010
    Publication date: December 2, 2010
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Joseph Yudovsky, Jeffrey Tobin, Patricia M. Liu, Faruk Gungor, Tai T. Ngo, Travis Tesch, Kenric Choi
  • Patent number: 7794544
    Abstract: The embodiments of the invention describe a process chamber, such as an ALD chamber, that has gas delivery conduits with gradually increasing diameters to reduce Joule-Thompson effect during gas delivery, a ring-shaped gas liner leveled with the substrate support to sustain gas temperature and to reduce gas flow to the substrate support backside, and a gas reservoir to allow controlled delivery of process gas. The gas conduits with gradually increasing diameters, the ring-shaped gas liner, and the gas reservoir help keep the gas temperature stable and reduce the creation of particles.
    Type: Grant
    Filed: October 26, 2007
    Date of Patent: September 14, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Son T. Nguyen, Kedarnath Sangam, Miriam Schwartz, Kenric Choi, Sanjay Bhat, Pravin K. Narwankar, Shreyas Kher, Rahul Sharangapani, Shankar Muthukrishnan, Paul Deaton
  • Publication number: 20090283252
    Abstract: A method and apparatus for heating or cooling a fluid. An inlet conduit coupled to a plurality of distribution nozzles in fluid communication with a channel at the periphery of the apparatus. An insert and a sleeve cooperatively define a thin gap, in fluid communication with the channel, through which the fluid flows. Thermal inserts near the thin gap generate heat flux into or out of the fluid, which exits through an outlet conduit.
    Type: Application
    Filed: May 16, 2008
    Publication date: November 19, 2009
    Inventors: Tao Hou, Son T. Nguyen, Kenric Choi, Anh N. Nguyen
  • Publication number: 20080041307
    Abstract: The embodiments of the invention describe a process chamber, such as an ALD chamber, that has gas delivery conduits with gradually increasing diameters to reduce Joule-Thompson effect during gas delivery, a ring-shaped gas liner leveled with the substrate support to sustain gas temperature and to reduce gas flow to the substrate support backside, and a gas reservoir to allow controlled delivery of process gas. The gas conduits with gradually increasing diameters, the ring-shaped gas liner, and the gas reservoir help keep the gas temperature stable and reduce the creation of particles.
    Type: Application
    Filed: October 26, 2007
    Publication date: February 21, 2008
    Inventors: Son Nguyen, Kedarnath Sangam, Miriam Schwartz, Kenric Choi, Sanjay Bhat, Pravin Narwankar, Shreyas Kher, Rahul Sharangapani, Shankar Muthukrishnam, Paul Deaton
  • Publication number: 20050271812
    Abstract: Embodiments of the invention provide apparatuses and methods for depositing materials on substrates during vapor deposition processes, such as atomic layer deposition (ALD). In one embodiment, a chamber contains a substrate support with a receiving surface and a chamber lid containing an expanding channel formed within a thermally insulating material. The chamber further includes at least one conduit coupled to a gas inlet within the expanding channel and positioned to provide a gas flow through the expanding channel in a circular direction, such as a vortex, a helix, a spiral or derivatives thereof. The expanding channel may be formed directly within the chamber lid or formed within a funnel liner attached thereon. The chamber may contain a retaining ring, an upper process liner, a lower process liner or a slip valve liner. Liners usually have a polished surface finish and contain a thermally insulating material such as fused quartz or ceramic.
    Type: Application
    Filed: May 12, 2005
    Publication date: December 8, 2005
    Inventors: Nyi Myo, Kenric Choi, Shreyas Kher, Pravin Narwankar, Steve Poppe, Craig Metzner, Paul Deaten
  • Publication number: 20050252449
    Abstract: The embodiments of the invention describe a process chamber, such as an ALD chamber, that has gas delivery conduits with gradually increasing diameters to reduce Joule-Thompson effect during gas delivery, a ring-shaped gas liner leveled with the substrate support to sustain gas temperature and to reduce gas flow to the substrate support backside, and a gas reservoir to allow controlled delivery of process gas. The gas conduits with gradually increasing diameters, the ring-shaped gas liner, and the gas reservoir help keep the gas temperature stable and reduce the creation of particles.
    Type: Application
    Filed: April 29, 2005
    Publication date: November 17, 2005
    Inventors: Son Nguyen, Kedarnath Sangam, Miriam Schwartz, Kenric Choi, Sanjay Bhat, Pravin Narwankar, Shreyas Kher, Rahul Sharangapani, Shankar Muthukrishnan, Paul Deaton