Abstract: A double mode SAW (DMS) filter includes: a plurality of interdigital transducers (IDTs), each having a plurality of Type 1 electrode fingers and a plurality of Type 2 electrode fingers formed on a piezoelectric substrate, wherein one Type 2 electrode finger among the plurality of Type 2 electrode fingers is disposed between two adjacent Type 1 electrode fingers among the plurality of Type 1 electrode fingers, and in a first IDT and a second IDT included in the plurality of IDTs to be adjacent to each other, one Type 1 electrode finger of the second IDT is disposed between two Type 1 electrode fingers of the first IDT. Accordingly, it is possible to provide a DMS filter capable of improving the amount of attenuation in an attenuation band adjacent to the wide band side for the passband and miniaturizing a product by saving space.

Abstract: A double mode SAW (DMS) filter includes: a plurality of interdigital transducers (IDTs), each having a plurality of Type 1 electrode fingers and a plurality of Type 2 electrode fingers formed on a piezoelectric substrate, wherein one Type 2 electrode finger among the plurality of Type 2 electrode fingers is disposed between two adjacent Type 1 electrode fingers among the plurality of Type 1 electrode fingers, and in a first IDT and a second IDT included in the plurality of IDTs to be adjacent to each other, one Type 1 electrode finger of the second IDT is disposed between two Type 1 electrode fingers of the first IDT. Accordingly, it is possible to provide a DMS filter capable of improving the amount of attenuation in an attenuation band adjacent to the wide band side for the passband and miniaturizing a product by saving space.

Abstract: A receiving filter circuit includes: a double mode surface acoustic wave (DMS) filter placed on a piezoelectric substrate and having a first reflector and a plurality of comb-shaped electrodes located adjacent to the first reflector; and a surface acoustic wave (SAW) resonator placed on the piezoelectric substrate in such a manner as to be laid on at least a portion of a transmission path of a surface acoustic wave generated from the DMS filter and having a second reflector located on a position with a distance of zero from the first reflector and a plurality of comb-shaped electrodes located adjacent to the second reflector.

Abstract: In order to pass a signal having a wide pass bandwidth with respect to a center frequency of a pass band, a surface acoustic wave device includes a first surface acoustic wave element provided with a first pass band; and a second surface acoustic wave element having a second pass band in a high frequency band compared with the first pass band of the first surface acoustic wave element, in which the first surface acoustic wave element and the second surface acoustic wave element have a common input terminal and a common output terminal, and a frequency of a high frequency side of the first pass band of the first surface acoustic wave element is partially overlapped with a frequency of a low frequency side of the second pass band of the second surface acoustic wave element.

Abstract: A filter circuit includes: a first transmission filter connected between a first antenna terminal and a first transmission terminal; a second transmission filter connected between the first antenna terminal and a second transmission terminal; a first reception filter connected between a second antenna terminal and a first reception terminal, the second antenna terminal being connected to an antenna different from an antenna to which the first antenna terminal is connected; and a second reception filter connected between the second antenna terminal and a second reception terminal.

Abstract: A problem is improved in which a plurality of duplexers has to be used if at least one of a transmission band and reception band for a handheld terminal partially overlaps a frequency band used in another communication system. A duplexer device includes a duplexer configured to include an antenna terminal, a transmission terminal and a reception terminal and to have a specific transmission band and reception band and a band-stop filter connected to at least one of the antenna terminal, the transmission terminal and the reception terminal via a switch and configured to suppress some of at least one of the specific transmission band and reception band in response to the switching of the switch.

Abstract: In order to pass a signal having a wide pass bandwidth with respect to a center frequency of a pass band, a surface acoustic wave device includes a first surface acoustic wave element provided with a first pass band; and a second surface acoustic wave element having a second pass band in a high frequency band compared with the first pass band of the first surface acoustic wave element, in which the first surface acoustic wave element and the second surface acoustic wave element have a common input terminal and a common output terminal, and a frequency of a high frequency side of the first pass band of the first surface acoustic wave element is partially overlapped with a frequency of a low frequency side of the second pass band of the second surface acoustic wave element.

Abstract: A problem is improved in which a plurality of duplexers has to be used if at least one of a transmission band and reception band for a handheld terminal partially overlaps a frequency band used in another communication system. A duplexer device includes a duplexer configured to include an antenna terminal, a transmission terminal and a reception terminal and to have a specific transmission band and reception band and a band-stop filter connected to at least one of the antenna terminal, the transmission terminal and the reception terminal via a switch and configured to suppress some of at least one of the specific transmission band and reception band in response to the switching of the switch.

Abstract: An acoustic wave device includes: a first chip that includes a first substrate, and a first filter formed on a first surface of the first substrate; and a second chip that includes a second substrate, and a second filter formed on a second surface of the second substrate, the second surface being located in a plane different from the first surface.

Abstract: A filter circuit includes: a first band-pass filter, a second band-pass filter, a third band-pass filter and a fourth band-pass filter each having input and output terminals; a first terminal to which one of input and output terminals of first band-pass filter and one of input and output terminals of second band-pass filter are connected; a second terminal to which one of input and output terminals of third band-pass filter and one of input and output terminals of fourth band-pass filter are connected; a third terminal to which another one of input and output terminals of first band-pass filter and another one of input and output terminals of fourth band-pass filter are connected; and a fourth terminal to which another one of input and output terminals of second band-pass filter and another one of input and output terminals of third band-pass filter are connected.

Abstract: An acoustic wave device includes: a first chip that includes a first substrate, and a first filter formed on a first surface of the first substrate; and a second chip that includes a second substrate, and a second filter formed on a second surface of the second substrate, the second surface being located in a plane different from the first surface.

Abstract: A filter circuit includes: a first transmission filter connected between a first antenna terminal and a first transmission terminal; a second transmission filter connected between the first antenna terminal and a second transmission terminal; a first reception filter connected between a second antenna terminal and a first reception terminal, the second antenna terminal being connected to an antenna different from an antenna to which the first antenna terminal is connected; and a second reception filter connected between the second antenna terminal and a second reception terminal.

Abstract: A filter circuit includes: a first band-pass filter, a second band-pass filter, a third band-pass filter and a fourth band-pass filter each having input and output terminals; a first terminal to which one of input and output terminals of first band-pass filter and one of input and output terminals of second band-pass filter are connected; a second terminal to which one of input and output terminals of third band-pass filter and one of input and output terminals of fourth band-pass filter are connected; a third terminal to which another one of input and output terminals of first band-pass filter and another one of input and output terminals of fourth band-pass filter are connected; and a fourth terminal to which another one of input and output terminals of second band-pass filter and another one of input and output terminals of third band-pass filter are connected.

Abstract: A piezoelectric thin-film acoustic wave device formed of a piezoelectric thin film of AlN on the +C plane and having the polarization strength of not lower than 0.63×10?20 F/V and an information processing unit using the same are disclosed. This is the result of the inventors having studied the factors other than the C-axis orientation affecting the electromechanical coupling factor and developing a method of improving the electromechanical coupling factor in view of the occasional fact that the electromechanical coupling factor cannot be improved by improving the C-axis orientation and the electromechanical coupling factor required for the piezoelectric thin-film acoustic wave device is not obtained. In such a case, the receiving sensitivity of the receiving system may be deteriorated and the transmission strength of the transmission system is required to be increased undesirably having an adverse effect on the power saving efforts.

Abstract: A piezoelectric thin-film acoustic wave device formed of a piezoelectric thin film of AlN on the +C plane and having the polarization strength of not lower than 0.63×10?20 F/V and an information processing unit using the same are disclosed. This is the result of the inventors having studied the factors other than the C-axis orientation affecting the electromechanical coupling factor and developing a method of improving the electromechanical coupling factor in view of the occasional fact that the electromechanical coupling factor cannot be improved by improving the C-axis orientation and the electromechanical coupling factor required for the piezoelectric thin-film acoustic wave device is not obtained. In such a case, the receiving sensitivity of the receiving system may be deteriorated and the transmission strength of the transmission system is required to be increased undesirably having an adverse effect on the power saving efforts.

Abstract: A piezoelectric thin-film acoustic wave device formed of a piezoelectric thin film of AlN on the +C plane and having the polarization strength of not lower than 0.63×10?20 FN and an information processing unit using the same are disclosed. This is the result of the inventors having studied the factors other than the C-axis orientation affecting the electromechanical coupling factor and developing a method of improving the electromechanical coupling factor in view of the occasional fact that the electromechanical coupling factor cannot be improved by improving the C-axis orientation and the electromechanical coupling factor required for the piezoelectric thin-film acoustic wave device is not obtained. In such a case, the receiving sensitivity of the receiving system may be deteriorated and the transmission strength of the transmission system is required to be increased undesirably having an adverse effect on the power saving efforts.

Abstract: A piezoelectric thin-film acoustic wave device formed of a piezoelectric thin film of AlN on the +C plane and having the polarization strength of not lower than 0.63×10?20 F/V and an information processing unit using the same are disclosed. This is the result of the inventors having studied the factors other than the C-axis orientation affecting the electromechanical coupling factor and developing a method of improving the electromechanical coupling factor in view of the occasional fact that the electromechanical coupling factor cannot be improved by improving the C-axis orientation and the electromechanical coupling factor required for the piezoelectric thin-film acoustic wave device is not obtained. In such a case, the receiving sensitivity of the receiving system may be deteriorated and the transmission strength of the transmission system is required to be increased undesirably having an adverse effect on the power saving efforts.