Abstract: There is provided a technique that includes: etching a portion of a first film formed on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including: supplying an etching gas into a process chamber while raising an internal pressure of the process chamber in a state in which the substrate having the first film formed on the surface of the substrate is accommodated in the process chamber; and lowering the internal pressure of the process chamber by exhausting an interior of the process chamber in a state in which supply of the etching gas into the process chamber is stopped.

Abstract: There is provided a technique that includes performing a cycle a predetermined number of times, the cycle including: (a) executing a process recipe of processing a substrate by supplying a process gas to an interior of a process container that accommodates the substrate in a state in which the interior of the process container is heated; and (b) executing a cleaning recipe of cleaning the interior of the process container by supplying a cleaning gas to the interior of the process container that does not accommodate the substrate in the state in which the interior of the process container is heated, wherein a time from an end of (b) in the cycle until a start of (a) in a next cycle is set to be equal to or less than a time from an end of (a) in the cycle until a start of (b) in the cycle.

Abstract: There is provided a technique that includes: etching a portion of a first film formed on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including: supplying an etching gas into a process chamber while raising an internal pressure of the process chamber in a state in which the substrate having the first film formed on the surface of the substrate is accommodated in the process chamber; and lowering the internal pressure of the process chamber by exhausting an interior of the process chamber in a state in which supply of the etching gas into the process chamber is stopped.

Abstract: There is provided a technique that includes (a) pre-etching a surface of a substrate made of single crystal silicon by supplying a first etching gas to the substrate; (b) forming a silicon film on the substrate with the pre-etched surface, by supplying a first silicon-containing gas to the substrate; (c) etching a portion of the silicon film by supplying a second etching gas, which has a different molecular structure from a molecular structure of the first etching gas, to the substrate; and (d) forming an additional silicon film on the etched silicon film by supplying a second silicon-containing gas to the substrate.

Abstract: There is provided a method of manufacturing a semiconductor device. The method includes: forming a first amorphous silicon film on a substrate in a process chamber; and etching a portion of the first amorphous silicon film using a hydrogen chloride gas under a temperature at which an amorphous state of the first amorphous silicon film is maintained, in the process chamber.

Abstract: There is provided a technique that includes (a) pre-etching a surface of a substrate made of single crystal silicon by supplying a first etching gas to the substrate; (b) forming a silicon film on the substrate with the pre-etched surface, by supplying a first silicon-containing gas to the substrate; (c) etching a portion of the silicon film by supplying a second etching gas, which has a different molecular structure from a molecular structure of the first etching gas, to the substrate; and (d) forming an additional silicon film on the etched silicon film by supplying a second silicon-containing gas to the substrate.

Abstract: There is provided a method of manufacturing a semiconductor device. The method includes: forming a first amorphous silicon film on a substrate in a process chamber; and etching a portion of the first amorphous silicon film using a hydrogen chloride gas under a temperature at which an amorphous state of the first amorphous silicon film is maintained, in the process chamber.

Abstract: Provided is a method of manufacturing a semiconductor device. The method includes: carrying a substrate, which has a Ge-containing film on at least a portion of a surface thereof, into a process chamber; heating an inside of the process chamber, into which the substrate is carried, to a first process temperature; and terminating a surface of the Ge-containing film, which is exposed at a portion of the surface of the substrate, by Si by supplying at least a Si-containing gas to the inside of the process chamber heated to the first process temperature.