Abstract: In a state in which a sealing member is fixed to an exterior container by swaging, at least a tip side of a protrusion is embedded in a seal component. In a state before the sealing member is fixed to the exterior container by swaging, when the protrusion of the sealing member and the seal component are brought into abutment with each other, a communication path is formed in the protrusion or the seal component to communicate a space inside the exterior container and a space outside the exterior container with each other.

Abstract: This electrical storage device comprises: an electrode body; a bottomed cylindrical outer can; a sealing plate to which a positive electrode terminal and a negative electrode terminal are attached; and a functional part placed near the positive electrode terminal or the negative electrode terminal on the inner surface of the sealing plate. The electrode body has a positive electrode tab group for which a plurality of positive electrode tabs are laminated, and a negative electrode tab group for which a plurality of negative electrode tabs are laminated, and each tab group functions as a spring that connects the electrode body and the sealing plate. Of the positive electrode tab group and the negative electrode tab group, the spring constant of one tab group near the functional part is greater than the spring constant of the other tab group.

Abstract: In the present invention, a high-voltage side electrode component further includes a conductive film disposed on an upper surface of a dielectric electrode independently of a metal electrode. The conductive film is disposed between at least one gas ejection port and the metal electrode in plan view, and the conductive film is set to ground potential.

Abstract: An electric discharge generator and power supply device of electric discharge generator includes a radical gas generation apparatus, a process chamber apparatus, and an n-phase inverter power supply device. The radical gas generation apparatus is located adjacent to the process chamber apparatus. The radical gas generation apparatus includes a plurality of (n) discharge cells. The n-phase inverter power supply device includes a power supply circuit configuration offering a means to control output of n-phase alternating current voltages and variably controls, according to positions of the plurality of discharge cells, the alternating current voltages of different phases.

Abstract: A gas ejector of a gas supply apparatus includes a nozzle portion. The opening of a first-stage restricting cylinder constituting the nozzle portion has a circular cross-sectional shape with a diameter r1. A second-stage restricting cylinder is continuously formed with the first-stage restricting cylinder along a Z direction. The opening of the second-stage restricting cylinder has a circular cross-sectional shape with a diameter r2, and supplies a source gas supplied from the first-stage restricting cylinder to a low-vacuum processing chamber below. At this time, the diameter r2 is set to satisfy “r2>r1”.

Abstract: An information processing device includes a memory, and a processor coupled to the memory and configured to detect an access pattern according to which a memory reference instruction in a first loop process to be executed posterior to a second loop process accesses first data elements in the memory every loop iteration, and insert a prefetch instruction to the second loop process based on the access pattern, the prefetch instruction being an instruction to transfer at least one of the first data elements from the memory to a first sector of a cache memory, the at least one of the first data elements transferred to the first sector of the cache memory being never cached out by a second data element different from each of the first data elements.

Abstract: In the present disclosure, in a high-voltage side electrode component, the electrode main dielectric film is provided on the lower surface of the electrode conductive film, and the electrode additional dielectric film is disposed below the electrode main dielectric film at an upper main/additional inter-dielectric distance. The electrode main dielectric film includes the whole electrode conductive film in a plan view, and has a formation area larger than the electrode conductive film. The electrode additional dielectric film includes the electrode conductive film in a plan view and has a formation area slightly larger than the electrode conductive film and smaller than the electrode main dielectric film. The ground side electrode component has the same features as the above-mentioned features of the high-voltage side electrode component.

Abstract: In the present invention, a gas passing groove, a high-voltage electrode groove and a ground electrode groove formed in an electrode unit base are each spiral in plan view. A high-voltage electrode is embedded in the high-voltage electrode grove, and a ground electrode is embedded in the ground electrode groove. The high-voltage electrode and the ground electrode are arranged on sides of opposite side surfaces of the gas passing groove in the electrode unit base to oppose each other with a portion of the electrode unit base and the gas passing groove therebetween, and are spiral in plan view along with the gas passing groove.

Abstract: In an active gas generation apparatus of the present invention, an auxiliary conductive film provided on a first electrode dielectric film is provided to overlap part of an active gas flow path in plan view, and the auxiliary conductive film is set to the ground potential. An active gas auxiliary member provided on a second electrode dielectric film is provided to fill part of the active gas flow path between a discharge space and a gas ejection hole in a dielectric space between the first and second electrode dielectric films in order to limit to an active gas flow gap.

Abstract: In the present invention, an electrode pair having a discharge space therein is constituted by a combination of a high-voltage application electrode unit and a ground potential electrode unit. The high-voltage application electrode unit has, as the main components, an electrode dielectric film and a metal electrode formed on the upper surface of the electrode dielectric film. An auxiliary conductive film is formed in an annular shape so as to surround the metal electrode without overlapping the metal electrode in plan view. A metal electrode pressing member: has an annular shape in plan view; is provided to contact part of the upper surface of the auxiliary conductive film; and is fixed to a metal base flange. A ground potential is applied to the base flange.

Abstract: The present invention has features (1) to (3). The feature (1) is that “an active gas generation electrode group is formed in such a manner that a ground side electrode component supports a high-voltage side electrode component”. The feature (2) is that “stepped parts are provided in a discharge space outside region of a dielectric electrode in the high-voltage side electrode component, and project downward, and by a formation height of these stepped parts, the gap length of a discharge space is defined”. The feature (3) is that “the high-voltage side electrode component and the ground side electrode component are formed to have the thickness of a discharge space formation region relatively thin and the thickness of a discharge space outside region relatively thick”.

Abstract: In the present invention, a high-voltage side electrode constituent part includes a dielectric electrode and metal electrodes formed on the upper surface of the dielectric electrode. The dielectric electrode has a structure in which a film thickness is continuously changed along an X direction. That is, the film thickness of the right end of the dielectric electrode is set to a thickness dA1; and the film thickness of the left end is set to a thickness dB1 (>dA1), and is continuously increased from the right end to the left end along the X direction.

Abstract: A compiler program causes a computer to execute optimization processing for an optimization target program. The optimization target program includes a loop including a vector store instruction and a vector load instruction for an array variable. The optimization processing includes (1) unrolling the vector store instruction and the vector load instruction in the loop by an unrolling number of times to generate a plurality of unrolled vector store instructions and a plurality of unrolled vector load instructions, and (2) scheduling to move an unrolled vector load instruction among the plurality of unrolled vector load instructions, which is located after a first unrolled vector store instruction that is located at first among the plurality of unrolled vector load instructions, before the first unrolled vector store instruction.

Abstract: A gas passing groove, a high-voltage electrode groove, and a ground electrode groove provided to an electrode unit base are each helical in plan view. An electrode unit lid is placed on a front surface of the electrode unit base so that a high-voltage conduction hole and a high-voltage conduction point coincide with each other in plan view. An electrode cooling plate is placed on a front surface of the electrode unit lid so that a high-voltage opening includes the high-voltage conduction hole as a whole in plan view. The electrode unit lid and the electrode cooling plate are placed on the front surface of the electrode unit base so that a ground conduction groove, a ground conduction hole, and a ground conduction point coincide with one another in plan view.

Abstract: In the present invention, a gas passing groove, a high-voltage electrode groove and a ground electrode groove formed in an electrode unit base are each spiral in plan view. A high-voltage electrode is embedded in the high-voltage electrode grove, and a ground electrode is embedded in the ground electrode groove. The high-voltage electrode and the ground electrode are arranged on sides of opposite side surfaces of the gas passing groove in the electrode unit base to oppose each other with a portion of the electrode unit base and the gas passing groove therebetween, and are spiral in plan view along with the gas passing groove.

Abstract: A gas jetting apparatus capable of uniformly jetting, even onto a treatment-target object having a high-aspect-ratio groove, a gas into the groove. The gas jetting apparatus includes a gas jetting cell unit for jetting a gas toward a treatment-target object. The gas jetting cell unit includes a first cone-shaped member and a second cone-shaped member. A gap is formed between a side surface of a first cone shape and a side surface of the second cone-shaped member. Apex sides of the cone-shaped members face the treatment-target object.

Abstract: In an active gas generating apparatus, a power feeder is provided above metal electrodes in an integrated high-voltage electrode unit. When seen in plan view, the power feeder has a shape that entirely covers the metal electrodes in the integrated high-voltage electrode unit. Each of power feeding units is provided below the metal electrodes in an integrated ground electrode unit. When seen in plan view, each of the power feeding units has a shape that entirely covers the metal electrodes of the integrated ground electrode unit.

Abstract: In the present invention, a high-voltage side electrode component further includes a conductive film disposed on an upper surface of a dielectric electrode independently of a metal electrode. The conductive film is disposed between at least one gas ejection port and the metal electrode in plan view, and the conductive film is set to ground potential.

Abstract: A method of forming a nitride film wherein (a) a silane-based gas is supplied to a processing chamber through a gas supply port; (b) a nitrogen radical gas from a radical generator is supplied to the processing chamber through a radical gas pass-through port; and (c) the silane-based gas supplied in (a) is reacted with the nitrogen radical gas supplied in (b), without causing a plasma phenomenon in the processing chamber, to form a nitride film on a wafer.

Abstract: With respect to a dielectric electrode, gas-jetting holes and gas-jetting holes formed in two rows along the X direction are provided as three or more gas-jetting holes along the X direction in a central region. By providing a difference in the X direction between the position where the gas-jetting hole is formed and the position where the gas-jetting hole is formed, the gas-jetting holes and the gas-jetting holes disposed in two rows are provided such that gas-jetting holes and gas-jetting holes are alternately disposed along the X direction.