Abstract: A converter for converting AC to DC or DC to DC comprises a first transformer (10) having a secondary winding connected to a DC-load side of the converter, semiconductor switches connected to a primary winding of the transformer, a drive circuit configured to control the semiconductor switches to switch so as to deliver a voltage to the primary winding with a frequency exceeding 1 MHz and electronic components. The drive circuit comprises a second transformer (12) for voltage level shifting of said semiconductor switches with respect to a logic drive circuit unit of said drive circuit. The transformers are arranged inside or at the surface of a first printed circuit board (30), and the electronic components of the converter including said semiconductor switches are arranged inside or at the surface of a second printed circuit board (31). The two circuit boards are separated by a shielding ferrite layer (32) sandwiched therebetween.

Abstract: A self-aligned, silicon carbide power metal oxide semiconductor field effect transistor includes a trench formed in a first layer, with a base region and then a source region epitaxially regrown within the trench. A window is formed through the source region and into the base region within a middle area of the trench. A source contact is formed within the window in contact with a base and source regions. The gate oxide layer is formed on the source and base regions at a peripheral area of the trench and on a surface of the first layer. A gate electrode is formed on the gate oxide layer above the base region at the peripheral area of the trench, and a drain electrode is formed over a second surface of the first layer.

Abstract: A printed circuit board transformer comprises at least one primary winding and one secondary winding, each in the form of at least one layer of turns inside or at the surface of a printed circuit board. The transformer is designed for a step-up/down-operation. Each of the two layers (10, 11) has an elongated winding element (12, 13, 13?) substantially following an elongated winding element of the other layer while being in an overlapping relationship therewith as seen perpendicularly to said printed circuit board over substantially the entire extension of said winding elements. A second (11) of the layers belonging to the secondary winding has a fewer number of turns than the first (10) of said layers belonging to said primary winding.

Abstract: A printed circuit board transformer comprises at least one primary winding and one secondary winding, each in the form of at least one layer of turns inside or at the surface of a printed circuit board. The transformer is designed for a step-up/down-operation. Each of the two layers (10, 11) has an elongated winding element (12, 13, 13?) substantially following an elongated winding element of the other layer while being in an overlapping relationship therewith as seen perpendicularly to said printed circuit board over substantially the entire extension of said winding elements. A second (11) of the layers belonging to the secondary winding has a fewer number of turns than the first (10) of said layers belonging to said primary winding.

Abstract: A semiconductor device of unipolar type has Schottky-contacts (6) laterally separated by regions in the form of additional layers (7, 7?) of semiconductor material on top of a drift layer (3). Said additional layers being doped according to a conductivity type being opposite to the one of the drift layer. At least one (7?) of the additional layers has a substantially larger lateral extension and thereby larger area of the interface to the drift layer than adjacent such layers (7) for facilitating the building-up of a sufficient voltage between that layer and the drift layer for injecting minority charge carriers into the drift layer upon surge for surge protection.

Abstract: A self-aligned, silicon carbide power metal oxide semiconductor field effect transistor includes a trench formed in a first layer, with a base region and then a source region epitaxially regrown within the trench. A window is formed through the source region and into the base region within a middle area of the trench. A source contact is formed within the window in contact with a base and source regions. The gate oxide layer is formed on the source and base regions at a peripheral area of the trench and on a surface of the first layer. A gate electrode is formed on the gate oxide layer above the base region at the peripheral area of the trench, and a drain electrode is formed over a second surface of the first layer.

Abstract: A self-aligned, silicon carbide power metal oxide semiconductor field effect transistor includes a trench formed in a first layer, with a base region and then a source region epitaxially regrown within the trench. A window is formed through the source region and into the base region within a middle area of the trench. A source contact is formed within the window in contact with a base and source regions. The gate oxide layer is formed on the source and base regions at a peripheral area of the trench and on a surface of the first layer. A gate electrode is formed on the gate oxide layer above the base region at the peripheral area of the trench, and a drain electrode is formed over a second surface of the first layer.

Abstract: A self-aligned, silicon carbide power metal oxide semiconductor field effect transistor includes a trench formed in a first layer, with a base region and then a source region epitaxially regrown within the trench. A window is formed through the source region and into the base region within a middle area of the trench. A source contact is formed within the window in contact with a base and source regions. The gate oxide layer is formed on the source and base regions at a peripheral area of the trench and on a surface of the first layer. A gate electrode is formed on the gate oxide layer above the base region at the peripheral area of the trench, and a drain electrode is formed over a second surface of the first layer.

Abstract: A semiconductor device of unipolar type has Schottky-contacts (6) laterally separated by regions in the form of additional layers (7, 7?) of semiconductor material on top of a drift layer (3). Said additional layers being doped according to a conductivity type being opposite to the one of the drift layer. At least one (7?) of the additional layers has a substantially larger lateral extension and thereby larger area of the interface to the drift layer than adjacent such layers (7) for facilitating the building-up of a sufficient voltage between that layer and the drift layer for injecting minority charge carriers into the drift layer upon surge for surge protection.