Abstract: One example discloses a test-point access structure within a semiconductor, including: a target test-point configured to be coupled to a circuit within the semiconductor; a first doped region within the semiconductor configured to generate a first signal in response to an energy beam transmitted by a circuit editing (CE) tool; a second doped region within the semiconductor configured to generate a second signal in response to the energy beam transmitted by the CE tool; and a target pad coupling the target test-point to the first doped region; wherein the CE tool is configured to remove material from the semiconductor in response to the first signal and the second signal.

Abstract: Digital testing is performed on an integrated circuit while radiation upsets are induced at locations of the integrated circuit. For each digital test, a determination is made as to whether there is a variation in the output of the digital test from an expected output of the digital test. If there is variation, a time of the variation is indicated. In one example, a location of a defect in the digital circuit can be determined from the times of the variations. In other embodiments, a mapping of the digital circuit can be made from the times.

Abstract: Digital testing is performed on an integrated circuit while radiation upsets are induced at locations of the integrated circuit. For each digital test, a determination is made as to whether there is a variation in the output of the digital test from an expected output of the digital test. If there is variation, a time of the variation is indicated. In one example, a location of a defect in the digital circuit can be determined from the times of the variations. In other embodiments, a mapping of the digital circuit can be made from the times.