Abstract: A semiconductor device having a conduction channel which is electrically modulated. A trench structure is formed within a substrate enclosing a diffusion region. The trench structure isolates the devices formed within the diffusion region from the remaining portion of the substrate. The trench walls are made thin enough so that the width of the channel within a diffusion region may be controlled by applying an electrical potential between a trench wall and the substrate. Transistors formed within the trench structure have a conduction channel width controlled by the applied voltage permitting the gain of the transistor to be matched with the gain of other transistors on the substrate.

Abstract: In an electronic device with an active region on top of and isolated from an substrate, a first material region is defined on top of and/or adjacent to and electrically isolated from the active region and a second material region is attached to a surface of the first material region to form an interface defining a Peltier cooling junction therebetween. A current source connected in series to the first and the second material regions produces a cooling effect at the Peltier cooling junction.

Abstract: A semiconductor structure may include a silicon substrate, a first active device formed in a first region of the silicon substrate, a second active device formed in a second region of the silicon substrate, a first heating device connected thermally to the first active device and a second heating device connected thermally to the second active device. A first temperature sensing device detects a temperature of the first region, a second temperature sensing device detects a temperature of the second region and a circuit activates one of the first heating device and the second heating device in response to a sensed difference in temperature from the first and second temperature sensing devices.

Abstract: Bidirectional field emission devices (FEDs) and associated fabrication methods are described. A basic device includes a first unitary field emission structure and an adjacently positioned, second unitary field emission structure. The first unitary structure has a first cathode portion and a first anode portion, while the second unitary structure has a second cathode portion and a second anode portion. The structures are positioned such that the first cathode portion opposes the second anode portion so that electrons may flow by field emission thereto and the second cathode portion opposes the first anode portion, again so that electrons may flow by field emission thereto. A control mechanism defines whether the device is active, while biasing voltages applied to the first and second unitary structures define the direction of current flow. Multiple applications exist for such a bidirectional FED. For example, an FED DRAM cell is discussed, as are methods for fabricating the various devices.

Abstract: Bidirectional field emission devices (FEDs) and associated fabrication methods are described. A basic device includes a first unitary field emission structure and an adjacently positioned, second unitary field emission structure. The first unitary structure has a first cathode portion and a first anode portion, while the second unitary structure has a second cathode portion and a second anode portion. The structures are positioned such that the first cathode portion opposes the second anode portion so that electrons may flow by field emission thereto and the second cathode portion opposes the first anode portion, again so that electrons may flow by field emission thereto. A control mechanism defines whether the device is active, while biasing voltages applied to the first and second unitary structures define the direction of current flow. Multiple applications exist for such a bidirectional FED. For example, an FED DRAM cell is discussed, as are methods for fabricating the various devices.

Abstract: Lateral cathode field emission devices and methods of fabrication are set forth. Conventional integrated circuit fabrication techniques are advantageously used to produce the lateral FEDs. Cathode tips on the order of several hundred angstroms are consistently obtained as well as exact spacing of the cathode to gate and cathode to anode. Various cathode and device configurations are described, including a circular field emission device. A single integrated structure having multiple cathodes and multiple gates is possible to perform various logic operations and/or enhance current output from the device. Multiple field effect devices, with cathodes disposed parallel or perpendicular to the substrate, are integrally coupled through a sharing of one or more metallization layers definitive of the elements of the devices. Significant advantages in current density and circuit layout can be obtained. Methods for fabricating the various devices are also explained.

Abstract: Lateral cathode field emission devices and methods of fabrication are set forth. Conventional integrated circuit fabrication techniques are advantageously used to produce the lateral FEDs. Cathode tips on the order of several hundred angstroms are consistently obtained as well as exact spacing of the cathode to gate and cathode to anode. Various cathode and device configurations are described, including a circular field emission device. A single integrated structure having multiple cathodes and multiple gates is possible to perform various logic operations and/or enhance current output from the device. Multiple field effect devices, with cathodes disposed parallel or perpendicular to the substrate, are integrally coupled through a sharing of one or more metallization layers definitive of the elements of the devices. Significant advantages in current density and circuit layout can be obtained. Methods for fabricating the various devices are also explained.