Abstract: A frequency sensing voltage regulator is disclosed. A source follower transistor has a gate connected to a predetermined gate voltage, a drain coupled to an external supply voltage through a switching transistor, and a source connected to a load. The gate of the switching transistor is controlled by a delay circuit through which a pulse derived from the system clock is passed. Through the use of the delay circuit and the switching transistor, the amount of current produced by the source follower transistor is made a function of the cycle rate of the system clock and the current provided by the source follower transistor tracks the frequency-dependent current requirements of the load, resulting in a reduced variance of the supply voltage Vcc over a wide current range.

Abstract: A frequency sensing NMOS voltage regulator is disclosed. A NMOS source follower transistor has a gate connected to a predetermined gate voltage, a drain coupled to an external supply voltage through a PMOS switching transistor, and a source connected to a load. The gate of the PMOS transistor is controlled by a delay circuit through which a pulse derived from the system clock is passed. Through the use of the delay circuit and the PMOS transistor, the amount of current produced by the NMOS transistor is made a function of the cycle rate of the system clock and the current provided by the NMOS transistor tracks the frequency-dependent current requirements of the load, resulting in a reduced variance of the supply voltage Vcc over a wide current range.

Abstract: A frequency sensing NMOS voltage regulator is disclosed. A NMOS source follower transistor has a gate connected to a predetermined gate voltage, a drain coupled to an external supply voltage through a PMOS switching transistor, and a source connected to a load. The gate of the PMOS transistor is controlled by a delay circuit through which a pulse derived from the system clock is passed. Through the use of the delay circuit and the PMOS transistor, the amount of current produced by the NMOS transistor is made a function of the cycle rate of the system clock and the current provided by the NMOS transistor tracks the frequency-dependent current requirements of the load, resulting in a reduced variance of the supply voltage Vcc over a wide current range.

Abstract: A frequency sensing NMOS voltage regulator is disclosed. A NMOS source follower transistor has a gate connected to a predetermined gate voltage, a drain coupled to an external supply voltage through a PMOS switching transistor, and a source connected to a load. The gate of the PMOS transistor is controlled by a delay circuit through which a pulse derived from the system clock is passed. Through the use of the delay circuit and the PMOS transistor, the amount of current produced by the NMOS transistor is made a function of the cycle rate of the system clock and the current provided by the NMOS transistor tracks the frequency-dependent current requirements of the load, resulting in a reduced variance of the supply voltage Vcc over a wide current range.

Abstract: A frequency sensing NMOS voltage regulator is disclosed. A NMOS source follower transistor has a gate connected to a predetermined gate voltage, a drain coupled to an external supply voltage through a PMOS switching transistor, and a source connected to a load. The gate of the PMOS transistor is controlled by a delay circuit through which a pulse derived from the system clock is passed. Through the use of the delay circuit and the PMOS transistor, the amount of current produced by the NMOS transistor is made a function of the cycle rate of the system clock and the current provided by the NMOS transistor tracks the frequency-dependent current requirements of the load, resulting in a reduced variance of the supply voltage Vcc over a wide current range.

Abstract: A frequency sensing NMOS voltage regulator is disclosed. A NMOS source follower transistor has a gate connected to a predetermined gate voltage, a drain coupled to an external supply voltage through a PMOS switching transistor, and a source connected to a load. The gate of the PMOS transistor is controlled by a delay circuit through which a pulse derived from the system clock is passed. Through the use of the delay circuit and the PMOS transistor, the amount of current produced by the NMOS transistor is made a function of the cycle rate of the system clock and the current provided by the NMOS transistor tracks the frequency-dependent current requirements of the load, resulting in a reduced variance of the supply voltage Vcc over a wide current range.

Abstract: A non-inverting pass gate local wordline scheme for block architecture memory arrays is described which includes two switches connected in parallel which may be driven by complementary control signals. A clamping switch may be connected to the local wordline to clamp the local wordline to a power supply voltage at a low logic level whenever the pass gate blocks an input signal. When a particle or defect creates a short which short circuits a local wordline to a global wordline, the global wordline may be permanently disabled by pulling it LOW. Regardless of the states and/or polarities of the BLOCK and BLOCK signals, the local wordline is permanently held LOW because the pass gate is non-inverting. The present invention may thus reduce power in a memory device by preventing a row of memory cells from unnecessarily drawing unused and/or unusable current.

Abstract: Method and apparatus for controlling an output transistor in an output driver circuit. In one embodiment of the invention, an input signal is routed to a first gate body which is disposed over a first channel region in a substrate. The first gate body has a first resistance to the input signal and delays the input signal through the first gate body to provide a delayed input signal. This delayed input signal is routed to a second gate body which is disposed over a second channel region in the substrate. The first gate body is coupled to the second gate body to provide the delayed input signal to the second gate body. According to one embodiment of the invention, the transistor includes the first gate body coupled to an input signal and coupled to the second gate body to receive the input signal through the first resistance of the first gate body.