Patents by Inventor Kenta Fukuyama

Kenta Fukuyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High-frequency module and radio communication apparatus
    Patent number: 7149496
    Abstract: A high-frequency module comprises: a diplexer connected to an antenna terminal for branching a plurality of transmission/reception systems different in pass band from one another; switch circuits for switching the transmission/reception systems to transmission systems and reception systems; power amplifiers for amplifying transmission signals in the pass bands of the transmission systems; and matching circuits for matching the impedances of the power amplifiers to one another. The power amplifiers and the switch circuits are respectively formed by high-frequency semiconductor integrated circuit elements, and these high-frequency semiconductor integrated circuit elements are mounted on the surface of the multi-layer substrate. The high-frequency module is reduced both in size and loss and increased in isolation in its entirety.
    Type: Grant
    Filed: March 26, 2004
    Date of Patent: December 12, 2006
    Assignee: Kyocera Corporation
    Inventors: Masafumi Horiuchi, Katsuro Nakamata, Hiroshi Ninomiya, Yasuhiko Fukuoka, Satoru Iwasaki, Kenta Fukuyama
  • High-frequency module and radio communication apparatus
    Publication number: 20040203552
    Abstract: A high-frequency module comprises: a diplexer connected to an antenna terminal for branching a plurality of transmission/reception systems different in pass band from one another; switch circuits for switching the transmission/reception systems to transmission systems and reception systems; power amplifiers for amplifying transmission signals in the pass bands of the transmission systems; and matching circuits for matching the impedances of the power amplifiers to one another. The power amplifiers and the switch circuits are respectively formed by high-frequency semiconductor integrated circuit elements, and these high-frequency semiconductor integrated circuit elements are mounted on the surface of the multi-layer substrate. The high-frequency module is reduced both in size and loss and increased in isolation in its entirety.
    Type: Application
    Filed: March 26, 2004
    Publication date: October 14, 2004
    Applicant: Kyocera Corporation
    Inventors: Masafumi Horiuchi, Katsuro Nakamata, Hiroshi Ninomiya, Yasuhiko Fukuoka, Satoru Iwasaki, Kenta Fukuyama