Abstract: A semiconductor nanoparticle includes a core and a shell covering a surface of the core. The shell has a larger bandgap energy than the core and is in heterojunction with the core. The semiconductor nanoparticle emits light when irradiated with light. The core is made of a semiconductor that contains M1, M2, and Z. M1 is at least one element selected from the group consisting of Ag, Cu, and Au. M2 is at least one element selected from the group consisting of Al, Ga, In and Tl. Z is at least one element selected from the group consisting of S, Se, and Te. The shell is made of a semiconductor that consists essentially of a Group 13 element and a Group 16 element.

Abstract: A method for manufacturing a light emitting device includes preparing a light emitting device including: a package defining a recess; a first light source placed within the recess, and including a first light emitting element and a first wavelength conversion member; a second light source placed within the recess; and a second wavelength conversion member in contact with and covering the first light source and the second light source, the first light source and the second light source being configured to emit light independently of each other. The method further includes: emitting light simultaneously from the first light source and the second light source to obtain mixed light for which light from the first light source, light from the second light source, and light from the second wavelength conversion member are mixed; determining a chromaticity of the mixed light; and binning the mixed light based on the chromaticity.

Abstract: A semiconductor nanoparticle includes a core and a shell covering a surface of the core. The shell has a larger bandgap energy than the core and is in heterojunction with the core. The semiconductor nanoparticle emits light when irradiated with light. The core is made of a semiconductor that contains M1, M2, and Z. M1 is at least one element selected from the group consisting of Ag, Cu, and Au. M2 is at least one element selected from the group consisting of Al, Ga, In and Tl. Z is at least one element selected from the group consisting of S, Se, and Te. The shell is made of a semiconductor that consists essentially of a Group 13 element and a Group 16 element.

Abstract: Semiconductor nanoparticles including Ag, In, Ga, and S are provided. In the semiconductor nanoparticles, a ratio of a number of Ga atoms to a total number of In and Ga atoms is 0.95 or less. The semiconductor nanoparticles emit light having an emission peak with a wavelength in a range of from 500 nm to less than 590 nm, and a half bandwidth of 70 nm or less, and have an average particle diameter of 10 nm or less.

Abstract: A light emitting device includes one or more light emitting elements and a plurality of fluorescent materials, and emits a first light, a second light, and a third light, wherein the first light has a correlated color temperature between 1,500 K and 3,500 K and a color rendering index R9 of 50 or more, the second light has a correlated color temperature between 3,500 K and 5,500 K and a color rendering index R9 of 50 or more, the third light has values of X and Y coordinates in the chromaticity diagram of the CIE1931 color system smaller than the values of X and Y coordinates at a color temperature of 5,500 K on the black body radiation locus, and a light having a correlated color temperature of 6,500 K has a color rendering index R9 of 50 or more and a melanopic ratio of 1.0 or more.

Abstract: Semiconductor nanoparticles including Ag, In, Ga, and S are provided. In the semiconductor nanoparticles, a ratio of a number of Ga atoms to a total number of In and Ga atoms is 0.95 or less. The semiconductor nanoparticles emit light having an emission peak with a wavelength in a range of from 500 nm to less than 590 nm, and a half bandwidth of 70 nm or less, and have an average particle diameter of 10 nm or less.

Abstract: A light emitting device includes one or more light emitting elements and a plurality of fluorescent materials, and emits a first light, a second light, and a third light, wherein the first light has a correlated color temperature between 1,500 K and 3,500 K and a color rendering index R9 of 50 or more, the second light has a correlated color temperature between 3,500 K and 5,500 K and a color rendering index R9 of 50 or more, the third light has values of X and Y coordinates in the chromaticity diagram of the CIE1931 color system smaller than the values of X and Y coordinates at a color temperature of 5,500 K on the black body radiation locus, and a light having a correlated color temperature of 6,500 K has a color rendering index R9 of 50 or more and a melanopic ratio of 1.0 or more.

Abstract: A semiconductor nanoparticle includes a core and a shell covering a surface of the core. The shell has a larger bandgap energy than the core and is in heterojunction with the core. The semiconductor nanoparticle emits light when irradiated with light. The core is made of a semiconductor that contains M1, M2, and Z. M1 is at least one element selected from the group consisting of Ag, Cu, and Au. M2 is at least one element selected from the group consisting of Al, Ga, In and Tl. Z is at least one element selected from the group consisting of S, Se, and Te. The shell is made of a semiconductor that consists essentially of a Group 13 element and a Group 16 element.

Abstract: A light emitting device includes one or more light emitting elements and a plurality of fluorescent materials, and emits a first light, a second light, and a third light, wherein the first light has a correlated color temperature between 1,500 K and 3,500 K and a color rendering index R9 of 50 or more, the second light has a correlated color temperature between 3,500 K and 5,500 K and a color rendering index R9 of 50 or more, the third light has values of X and Y coordinates in the chromaticity diagram of the CIE1931 color system smaller than the values of X and Y coordinates at a color temperature of 5,500 K on the black body radiation locus, and a light having a correlated color temperature of 6,500 K has a color rendering index R9 of 50 or more and a melanopic ratio of 1.0 or more.

Abstract: Semiconductor nanoparticles including Ag, In, Ga, and S are provided. In the semiconductor nanoparticles, a ratio of a number of Ga atoms to a total number of In and Ga atoms is 0.95 or less. The semiconductor nanoparticles emit light having an emission peak with a wavelength in a range of from 500 nm to less than 590 nm, and a half bandwidth of 70 nm or less, and have an average particle diameter of 10 nm or less.

Abstract: A semiconductor nanoparticle includes a core and a shell covering a surface of the core. The shell has a larger bandgap energy than the core and is in heterojunction with the core. The semiconductor nanoparticle emits light when irradiated with light. The core is made of a semiconductor that contains M1, M2, and Z. M1 is at least one element selected from the group consisting of Ag, Cu, and Au. M2 is at least one element selected from the group consisting of Al, Ga, In and Tl. Z is at least one element selected from the group consisting of S, Se, and Te. The shell is made of a semiconductor that consists essentially of a Group 13 element and a Group 16 element.

Abstract: Semiconductor nanoparticles including Ag, In, Ga, and S are provided. In the semiconductor nanoparticles, a ratio of a number of Ga atoms to a total number of In and Ga atoms is 0.95 or less. The semiconductor nanoparticles emit light having an emission peak with a wavelength in a range of from 500 nm to less than 590 nm, and a half bandwidth of 70 nm or less, and have an average particle diameter of 10 nm or less.

Abstract: A method for manufacturing a light emitting device includes preparing a light emitting device including: a package defining a recess; a first light source placed within the recess, and including a first light emitting element and a first wavelength conversion member; a second light source placed within the recess; and a second wavelength conversion member in contact with and covering the first light source and the second light source, the first light source and the second light source being configured to emit light independently of each other. The method further includes: emitting light simultaneously from the first light source and the second light source to obtain mixed light for which light from the first light source, light from the second light source, and light from the second wavelength conversion member are mixed; determining a chromaticity of the mixed light; and binning the mixed light based on the chromaticity.

Abstract: A semiconductor nanoparticle includes a core and a shell covering a surface of the core. The shell has a larger bandgap energy than the core and is in heterojunction with the core. The semiconductor nanoparticle emits light when irradiated with light. The core is made of a semiconductor that contains M1, M2, and Z. M1 is at least one element selected from the group consisting of Ag, Cu, and Au. M2 is at least one element selected from the group consisting of Al, Ga, In and Tl. Z is at least one element selected from the group consisting of S, Se, and Te. The shell is made of a semiconductor that consists essentially of a Group 13 element and a Group 16 element.

Abstract: A semiconductor nanoparticle includes a core and a shell covering a surface of the core. The shell has a larger bandgap energy than the core and is in heterojunction with the core. The semiconductor nanoparticle emits light when irradiated with light. The core is made of a semiconductor that contains M1, M2, and Z. M1 is at least one element selected from the group consisting of Ag, Cu, and Au. M2 is at least one element selected from the group consisting of Al, Ga, In and Tl. Z is at least one element selected from the group consisting of S, Se, and Te. The shell is made of a semiconductor that consists essentially of a Group 13 element and a Group 16 element.

Abstract: Semiconductor nanoparticles including Ag, In, Ga, and S are provided. In the semiconductor nanoparticles, a ratio of a number of Ga atoms to a total number of In and Ga atoms is 0.95 or less. The semiconductor nanoparticles emit light having an emission peak with a wavelength in a range of from 500 nm to less than 590 nm, and a half bandwidth of 70 nm or less, and have an average particle diameter of 10 nm or less.

Abstract: A semiconductor nanoparticle includes a core and a shell covering a surface of the core. The shell has a larger bandgap energy than the core and is in heterojunction with the core. The semiconductor nanoparticle emits light when irradiated with light. The core is made of a semiconductor that contains M1, M2, and Z. M1 is at least one element selected from the group consisting of Ag, Cu, and Au. M2 is at least one element selected from the group consisting of Al, Ga, In and Tl. Z is at least one element selected from the group consisting of S, Se, and Te. The shell is made of a semiconductor that consists essentially of a Group 13 element and a Group 16 element.