Abstract: The deterioration of light condensing characteristics of an overall solid-state imaging device resulting from providing in-layer lenses is suppressed while preventing the deterioration of device characteristics of the solid-state imaging device and reduction of yield.

Abstract: There is provided a solid-state imaging device including a semiconductor substrate on which photoelectric conversion devices are arranged in an imaging device region in a two-dimensional array, and a stacked body formed by stacking layers on the semiconductor substrate, wherein the stacked body includes an in-layer lens layer that has in-layer lenses each provided at a position corresponding to each of the photoelectric conversion devices, a planarization layer that is stacked on the in-layer lens layer and that has a generally planarized surface, and an on-chip lens layer that is an upper layer than the planarization layer and that has on-chip lenses each provided at a position corresponding to each of the photoelectric conversion devices, and the in-layer lens layer has structures at a height generally equal to a height of the in-layer lenses, the structures being provided on an outside of the imaging device region.

Abstract: There is provided a solid-state imaging device including a semiconductor substrate on which photoelectric conversion devices are arranged in an imaging device region in a two-dimensional array, and a stacked body formed by stacking layers on the semiconductor substrate, wherein the stacked body includes an in-layer lens layer that has in-layer lenses each provided at a position corresponding to each of the photoelectric conversion devices, a planarization layer that is stacked on the in-layer lens layer and that has a generally planarized surface, and an on-chip lens layer that is an upper layer than the planarization layer and that has on-chip lenses each provided at a position corresponding to each of the photoelectric conversion devices, and the in-layer lens layer has structures at a height generally equal to a height of the in-layer lenses, the structures being provided on an outside of the imaging device region.

Abstract: A solid-state imaging device including a semiconductor substrate on which a plurality of photoelectric conversion devices are arranged in an imaging device region in a two-dimensional array and a stacked body formed by stacking a plurality of layers on the semiconductor substrate. The stacked body includes an in-layer lens layer that has in-layer lenses each provided at a position corresponding to each of the photoelectric conversion devices. The solid-state imaging device further includes a planarization layer that is stacked on the in-layer lens layer and an on-chip lens layer that is an upper layer than the planarization layer and that has on-chip lenses each provided at a position corresponding to each of the photoelectric conversion devices. The in-layer lens layer has a plurality of structures at a height equal to a height of the in-layer lenses, the plurality of structures being provided on an outside of the imaging device region.

Abstract: The deterioration of light condensing characteristics of an overall solid-state imaging device resulting from providing in-layer lenses is suppressed while preventing the deterioration of device characteristics of the solid-state imaging device and reduction of yield.

Abstract: There is provided a solid state image pickup apparatus including a first semiconductor substrate and a second semiconductor substrate which are bonded to each other, and a buried portion formed in a peripheral portion of the apparatus with a depth of a bonded surface of the first semiconductor substrate and the second semiconductor substrate in such a manner that the bonded surface of the first semiconductor substrate and the second semiconductor substrate is not exposed.

Abstract: There is provided a solid state image pickup apparatus including a first semiconductor substrate and a second semiconductor substrate which are bonded to each other, and a buried portion formed in a peripheral portion of the apparatus with a depth of a bonded surface of the first semiconductor substrate and the second semiconductor substrate in such a manner that the bonded surface of the first semiconductor substrate and the second semiconductor substrate is not exposed.