Patents by Inventor Kentaro Onabe

Kentaro Onabe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4675708
    Abstract: A light emitting diode, semiconductor laser or similar light emitting element, having an emission wavelength is 560 nanometers or less, that is implemented with only III-V compound semiconductors. The active layer of the light emitting element uses a semiconductor superlattice structure generated by periodically and repeatedly laminating a multi layer structure of different semiconductors. The structure comprises layers of A1P, GaP and InP, each layer being one of ten atomic layers thick.
    Type: Grant
    Filed: September 24, 1985
    Date of Patent: June 23, 1987
    Assignee: NEC Corporation
    Inventor: Kentaro Onabe